Vanadium oxide film and process for producing same

Patent metadata

Field	Value
Publication number	US-2017313595-A1
Application number	US-201515520339-A
Country	US
Kind code	A1
Filing date	Oct 26, 2015
Priority date	Oct 27, 2014
Publication date	Nov 2, 2017
Grant date	—

Abstract

Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol % based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling. This vanadium oxide film is produced by applying a mixture solution containing a vanadium organic compound, an aluminum organic compound, and a copper organic compound to a substrate, calcining the substrate at a temperature lower than the temperature at which the substrate decomposes, and irradiating the surface of the substrate onto which the mixture solution has been applied with ultraviolet light.

First claim

1 . A vanadium oxide film, wherein a portion of vanadium is replaced by one or more metals selected from nickel, iron, and aluminum, and copper.

2 . A vanadium oxide film, wherein a portion of vanadium is replaced by iron, and the amount of substance of iron is 4.0 to 10 mol % based on the sum of the amount of substance of vanadium and the amount of substance of iron.

3 . The vanadium oxide film according to claim 1 , wherein a portion of vanadium is replaced by aluminum and copper, and the amount of substance of aluminum is 7 to 10 mol % based on the total sum of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper.

4 . The vanadium oxide film according to claim 1 , wherein
the amount of substance of vanadium is 80 mol % or more and less than 100 mol % based on the sum of the amount of substance of vanadium and the amount of substance of the metals replacing vanadium.

5 . The vanadium oxide film according to claim 1 , wherein
an absolute value of a temperature coefficient of resistance is 3%/° C. or more in a temperature range of 0 to 80° C., and the film shows substantially no hysteresis of resistivity changes due to temperature rising/falling in a temperature range of 20 to 100° C.

6 . The vanadium oxide film according to claim 1 , wherein
the absolute value of the temperature coefficient of resistance is 5%/° C. or more in a certain temperature region of 20° C. or more.

7 . A method for producing a vanadium oxide film, comprising:
an application step of applying a mixture solution containing a vanadium organic compound, one or more metal organic compounds containing a metal selected from nickel, iron, and aluminum, and a copper organic compound onto a substrate, and at least one step of: a calcining step of calcining the substrate onto which the mixture solution has been applied at a temperature lower than a temperature at which the substrate decomposes; and an ultraviolet light irradiation step of irradiating a surface of the substrate onto which the mixture solution has been applied with ultraviolet light.

8 . An infrared sensor comprising the vanadium oxide film according to claim 1 .

9 . Light control glass comprising the vanadium oxide film according to claim 1 .

Assignees

• Nat Inst Advanced Ind Science & Tech

Inventors

• Tsuchiya Tetsuo
• Ishizaki Haruo
• Nakajima Tomohiko
• Shinoda Kentaro

Classifications

• H10P14/3446

  Transition metal elements; Rare earth elements · CPC title

• H10P14/3434 Primary

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/265

  using solutions · CPC title

• G01J5/0003

  for sensing the radiant heat transfer of samples, e.g. emittance meter · CPC title

• C01G31/02 Primary

  Oxides · CPC title