Substrate treatment apparatus and substrate treatment method

Patent metadata

Field	Value
Publication number	US-2017309501-A1
Application number	US-201615254505-A
Country	US
Kind code	A1
Filing date	Sep 1, 2016
Priority date	Apr 22, 2016
Publication date	Oct 26, 2017
Grant date	—

Abstract

According to embodiments, a substrate treatment apparatus includes a housing, a heater and a pipe. The housing stores solution containing phosphoric acid and houses a substrate including a silicon substrate. The heater heats the solution over a normal boiling point of the solution. The pipe supplies heated solution heated by the heater into the housing while generating air bubbles.

First claim

1 . A substrate treatment apparatus comprising:
a housing which stores solution containing phosphoric acid and houses a substrate including a silicon nitride film; a heater which heats the solution over a normal boiling point of the solution; and a pipe which supplies heated solution heated by the heater into the housing while generating air bubbles.

2 . The substrate treatment apparatus according to claim 1 ,
wherein the pipe is a part of a circulation path circulating the solution to the housing; and the substrate treatment apparatus further comprises a pump which draws the solution from the housing through the circulation path and sends the solution to the heater, and which pressurizes the heated solution.

3 . The substrate treatment apparatus according to claim 1 ,
wherein the housing includes a box type inner housing which stores the solution and houses the substrate, and an outer housing which surrounds the inner housing and collects the solution overflowing from the inner housing; and the substrate treatment apparatus further comprises a supply unit which supplies water or the phosphoric acid to the outer housing.

4 . The substrate treatment apparatus according to claim 1 ,
wherein a peripheral face of the pipe has an opening communicating with the housing; and a ratio of an inside diameter of the pipe to a diameter of the opening is within a range of 3-10.

5 . The substrate treatment apparatus according to claim 1 ,
wherein N (where N is a natural number equal to 2 or more) substrates are disposed at a first interval which is larger than at least 0.5 mm; and a diameter of the air bubbles is larger than 0.5 mm and smaller than the first interval.

6 . The substrate treatment apparatus according to claim 5 ,
further comprising a plate member facing a first substrate and an Nth substrate respectively, which are located at both ends of a row of the substrates.

7 . The substrate treatment apparatus according to claim 6 ,
wherein an interval between the plate member and the first substrate, and an interval between the plate member and the Nth substrate, are respectively almost equal to the first interval.

8 . The substrate treatment apparatus according to claim 6 ,
wherein the plate member is attached to a lifter which moves a plurality of the substrates in a vertical direction to the housing.

9 . The substrate treatment apparatus according to claim 6 ,
wherein the plate member is attached to an internal surface of the housing.

10 . The substrate treatment apparatus according to claim 6 ,
wherein a plane area of the plate member is larger than that of the first substrate, and also that of the Nth substrate.

11 . The substrate treatment apparatus according to claim 5 ,
wherein an interval between a first substrate located at one end of a row of the substrates and an internal surface of the housing facing the first substrate, and an interval between an Nth substrate located at the other end of the row of the substrates and the internal surface of the housing facing the Nth substrate, are respectively almost equal to the first interval.

12 . A substrate treatment method comprising:
immersing a substrate including a silicon nitride film in a housing which stores solution containing phosphoric acid; heating the solution over a normal boiling point of the solution outside the housing; and supplying heated solution into the housing while generating air bubbles.

13 . The substrate treatment method according to claim 12 , wherein
the solution is drawn from the housing; and drawn solution is heated over the normal boiling point.

14 . The substrate treatment method according to claim 13 , wherein
the housing includes a box type inner housing which stores the solution and houses the substrate, and an outer housing which surrounds the inner housing and collects the solution overflowing from the inner housing; and water or phosphoric acid is supplied to the outer housing.

Assignees

• Toshiba Memory Corp

Inventors

• Kitamura Yoshinori
• Sato Katsuhiro
• Ashidate Hiroaki

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/282

  of inorganic materials · CPC title

• H10P72/0426 Primary

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• B05C3/09

  for treating separate articles · CPC title

• H01L21/31111

  Electricity · mapped topic