Apparatus and method for producing gallium oxide crystal

Patent metadata

Field	Value
Publication number	US-2017306521-A1
Application number	US-201715470547-A
Country	US
Kind code	A1
Filing date	Mar 27, 2017
Priority date	Apr 21, 2016
Publication date	Oct 26, 2017
Grant date	—

Abstract

The apparatus for producing a gallium oxide crystal relating to the invention contains a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater, the crucible is a crucible containing a Pt-based alloy, the furnace body has an inner wall that is formed as a heat-resistant wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, and the ring shaped heat-resistant members each contain plural divided pieces that are joined to each other to the ring shape.

First claim

What is claimed is:

1 . An apparatus for producing a gallium oxide crystal, comprising a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater,
the crucible being a crucible containing a Pt-based alloy, the furnace body having an inner wall that is formed as a heat-resistant wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, the ring shaped heat-resistant members each containing plural divided pieces that are joined to each other to the ring shape.

2 . The apparatus for producing a gallium oxide crystal according to claim 1 , wherein the crucible is a crucible containing a Pt—Rh-based alloy having a Rh content of from 10 to 30 wt %.

3 . The apparatus for producing a gallium oxide crystal according to claim 1 , wherein the heat-resistant wall contains zirconia.

4 . The apparatus for producing a gallium oxide crystal according to claim 2 , wherein the heat-resistant wall contains zirconia.

5 . The apparatus for producing a gallium oxide crystal according to claim 1 , wherein the heater is a resistance heater.

6 . The apparatus for producing a gallium oxide crystal according to claim 5 , wherein the resistance heater is a resistance heater containing MoSi 2 as a major material.

7 . The apparatus for producing a gallium oxide crystal according to claim 1 , wherein the heater is a high-frequency induction heater.

8 . The apparatus for producing a gallium oxide crystal according to claim 7 , wherein the high-frequency induction heater contains a Pt—Rh-based alloy.

9 . The apparatus for producing a gallium oxide crystal according to claim 1 , wherein the furnace body contains a supporting cylinder member formed of a heat-resistant material and disposed outside the heat-resistant wall, and a thermal insulator disposed between the heat-resistant wall and the supporting cylinder member, and the lid member is supported by the supporting cylinder member.

10 . The apparatus for producing a gallium oxide crystal according to claim 1 , wherein the lid member contains a thermal insulator, and a reinforcing member is disposed in the thermal insulator.

11 . A method for producing a gallium oxide crystal, comprising growing a gallium oxide crystal in an oxygen atmosphere by using the apparatus for producing a gallium oxide crystal according to claim 1 .

12 . The method for producing a gallium oxide crystal according to claim 11 , wherein the gallium oxide is β-Ga 2 O 3 .

13 . The method for producing a gallium oxide crystal according to claim 11 , wherein the crucible is a crucible containing a Pt—Rh-based alloy having a Rh content of from 10 to 30 wt %.

14 . The method for producing a gallium oxide crystal according to claim 11 , wherein the heat-resistant wall contains zirconia.

15 . The method for producing a gallium oxide crystal according to claim 11 , wherein the heater is a resistance heater.

16 . The method for producing a gallium oxide crystal according to claim 15 , wherein the resistance heater is a resistance heater containing MoSi 2 as a major material.

17 . The method for producing a gallium oxide crystal according to claim 11 , wherein the heater is a high-frequency induction heater.

18 . The method for producing a gallium oxide crystal according to claim 17 , wherein the high-frequency induction heater contains a Pt—Rh-based alloy.

Assignees

• Univ Shinshu
• Fujikoshi Machinery Corp

Inventors

• Hoshikawa Keigo
• Kobayashi Takumi
• Ohba Etsuko
• Yanagisawa Jun

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/263

  using melted materials · CPC title

• C30B11/003

  Heating or cooling of the melt or the crystallised material · CPC title

• C30B11/002 Primary

  Crucibles or containers for supporting the melt · CPC title

• C30B29/16 Primary

  Oxides · CPC title