Optoelectronic device comprising perovskites
US-2015129034-A1 · May 14, 2015 · US
US2017301480A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017301480-A1 |
| Application number | US-201715487988-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 14, 2017 |
| Priority date | Apr 15, 2016 |
| Publication date | Oct 19, 2017 |
| Grant date | — |
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An aspect of the present disclosure is a method that includes, in a first mixture that includes a metal alkoxide and water, reacting at least a portion of the metal alkoxide and at least a portion of the water to form a second mixture that includes a solid metal oxide phase dispersed in the second mixture, applying the second mixture onto a surface of a device that includes an intervening layer adjacent to a perovskite layer such that the intervening layer is between the second mixture and perovskite layer, and treating the second mixture, such that the solid metal oxide phase is transformed to a first solid metal oxide layer such that the intervening layer is positioned between the first solid metal oxide layer and the perovskite layer.
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What is claimed is: 1 . A method comprising: in a first mixture comprising a metal alkoxide and water, reacting at least a portion of the metal alkoxide and at least a portion of the water to form a second mixture comprising a solid metal oxide phase dispersed in the second mixture; applying the second mixture onto a surface of a device comprising an intervening layer adjacent to a perovskite layer such that the intervening layer is between the second mixture and perovskite layer; and treating the second mixture, such that the solid metal oxide phase is transformed to a first solid metal oxide layer such that the intervening layer is positioned between the first solid metal oxide layer and the perovskite layer. 2 . The method of claim 1 , wherein the metal alkoxide comprises Si(OR) 4 and the R group comprises an alkyl group. 3 . The method of claim 2 , wherein the R group comprises a polymeric group. 4 . The method of claim 3 , wherein the polymeric group comprises at least one of a polystyrene group, a polyamide group, a poly(ethyleneimine) group, an epoxy group, a poly(ethylene oxide) group, a poly(oxypropylene) group, a poly(arylene ether phosphine oxide) group, a poly(arylene ether sulfone) group, a cellulose acetate group, a polyacrylic group, a polyacrylonitrile group, or a polybutadiene group. 5 . The method of claim 2 , wherein the solid metal oxide phase comprises a first network of interconnected silicon atoms comprising at least one of SiO 2 , SiO 1.5 OH, SiO(OH) 2 , SiO 0.5 (OH) 3 , SiO 1.5 R, SiOR 2 , SiO 0.5 R 3 , SiO 0.5 (OH)R 2 , SiO 0.5 (OH) 2 R, or SiO(OH)R and a first amount of unreacted Si(OR) 4 . 6 . The method of claim 5 , wherein the first solid metal oxide layer comprises a second network of interconnected silicon atoms comprising at least one of SiO 2 , SiO 1.5 OH, SiO(OH) 2 , SiO 0.5 (OH) 3 , SiO 1.5 R, SiOR 2 , SiO 0.5 R 3 , SiO 0.5 (OH)R 2 , SiO 0.5 (OH) 2 R, or SiO(OH)R and a second amount of unreacted Si(OR) 4 that is less than the first amount. 7 . The method of claim 1 , wherein the first mixture further comprises an alcohol. 8 . The method of claim 6 , wherein the first mixture further comprises R′[Si(OR) 3 ] x where x is an integer value between 1 and 10 inclusively. 9 . The method of claim 8 , wherein the R′ group comprises an organic group. 10 . The method of claim 9 , wherein the organic group comprises at least one of an alkane group, an alkene group, or an aromatic group. 11 . The method of claim 8 , wherein the first network further comprises at least one of SiO 1.5 R′ 0.5 , SiOR′, SiO 0.5 R′ 1.5 , SiO(OH)R′ 0.5 , SiO 0.5 (OH)R′, or Si(OH)R′ 1.5 . 12 . The method of claim 11 , wherein the second network further comprises at least one of SiO 1.5 R′ 0.5 , SiOR′, SiO 0.5 R′ 1.5 , SiO(OH)R′ 0.5 , SiO 0.5 (OH)R′, or Si(OH)R′ 1.5 . 13 . The method of claim 1 , wherein the reacting is performed at a temperature between 25° C. and 95° C. 14 . The method of claim 1 , wherein the applying is performed by at least one of dip coating, curtain coating, or spin coating. 15 . The method of claim 1 , wherein the intervening layer comprises a second solid metal oxide layer. 16 . The method of claim 15 , wherein the second solid metal oxide layer is substantially transparent to sunlight. 17 . The method of claim 16 , wherein the second solid metal oxide layer comprises nickel oxide. 18 . The method of claim 15 , wherein the second solid metal oxide layer has a thickness between 10 Å and 500 Å. 19 . The method of claim 1 , wherein the perovskite comprises ABX 3 , where X comprises an anion, A comprises a first cation, and B comprises a second cation. 20 . The method of claim 1 , further comprising prior to the applying, depositing the second solid metal oxide layer onto the perovskite layer. 21 . The method of claim 20 , wherein the depositing is performed by atomic layer deposition. 22 . The method of claim 20 , further comprising prior to the depositing, forming the perovskite layer. 23 . The method of claim 22 , wherein the forming is performed by at least one of a solution method or a vapor phase method. 24 . The method of claim 1 , wherein the treating comprises at least one of heating the second mixture or exposing the second mixture to a gas. 25 . A device comprising: a perovskite layer; and at least one metal oxide layer adjacent to the perovskite layer. 26 . The device of claim 25 , wherein the at least one metal oxide layer comprises a silica-containing layer. 27 . The device of claim 26 , wherein the at least one metal oxide layer further comprises a nickel oxide layer positioned between the perovskite layer and the silica-containing layer.
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the electrolyte comprising ionic liquids, e.g. alkyl imidazolium iodide · CPC title
Electricity · mapped topic
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