Magnetic stack including crystallized segregant induced columnar magnetic recording layer

Patent metadata

Field	Value
Publication number	US-2017301366-A1
Application number	US-201715634671-A
Country	US
Kind code	A1
Filing date	Jun 27, 2017
Priority date	Jan 3, 2014
Publication date	Oct 19, 2017
Grant date	—

Abstract

A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.

First claim

What is claimed is:

1 . A stack, comprising:
a substrate; a magnetic recording layer having a columnar structure comprising FePt magnetic grains separated by a crystalline segregant; and a TiN—X interlayer disposed between the substrate and the magnetic recording layer, wherein X is a dopant material for which the heat of formation of corresponding metallic nitrides at 298K is not less than 338 kJ/g-atom metal for TiN.

2 . The stack of claim 1 , wherein the crystalline segregant is at least one of MgO, TiO 2 , ZrO 2 , and TiC.

3 . The stack of claim 1 , wherein the crystalline segregant is ZrO 2 .

4 . The stack of claim 3 , wherein the magnetic recording layer comprises ZrO 2 in an amount between about 5 and about 50 vol. %.

5 . The stack of claim 1 , wherein the crystalline segregant comprises at least 50% crystalline structure.

6 . The stack of claim 1 , wherein the magnetic recording layer further comprises an amorphous segregant disposed between the magnetic grains and the crystalline segregant.

7 . The stack of claim 6 , wherein the amorphous segregant is at least one of C, SiO 2 , TiO 2 , WO 3 , Ta 2 O 5 , and BN.

8 . The stack of claim 1 , wherein X is at least one of MgO, TiC, TiO, TiO 2 , ZrN, ZrC, ZrO, ZrO 2 , HfN, HfC, HfO, HfO 2 , C, SiO 2 , and BN.

9 . The stack of claim 1 , further comprising a TiN layer disposed between the substrate and the TiN—X interlayer, wherein the TiN layer is not doped.

10 . The stack of claim 1 , wherein a thickness of the magnetic recording layer is between about 5 and about 30 nm.

11 . The stack of claim 1 , wherein the FePt grains have a height/diameter aspect ratio of at least about 1 .

12 . A stack, comprising:
a substrate; a magnetic recording layer having a columnar structure comprising magnetic grains separated by a crystalline segregant; and an interlayer disposed between the substrate and the magnetic recording layer, wherein the interlayer is a TiN—X layer and X is a dopant comprising at least one of MgO, TiC, TiO, TiO 2 , ZrN, ZrC, ZrO, ZrO 2 , HfN, HfC, HfO, HfO 2 , C, SiO 2 , and BN.

13 . The stack of claim 12 , wherein the crystalline segregant is at least one of MgO, TiO 2 , ZrO 2 , and TiC.

14 . The stack of claim 12 , wherein the magnetic grains are FePt grains and the crystalline segregant is ZrO 2 .

15 . The stack of claim 12 , wherein the magnetic recording layer further comprises an amorphous segregant disposed between the magnetic grains and the crystalline segregant.

16 . The stack of claim 12 , wherein the amorphous segregant is at least one of C, SiO 2 , TiO 2 , WO 3 , Ta 2 O 5 , and BN.

17 . A stack, comprising:
a substrate; a magnetic recording layer having a columnar structure, comprising magnetic grains separated from each other by a crystalline segregant and by an amorphous segregant, wherein the magnetic grains comprise FePt, the crystalline segregant comprises ZrO 2 , and the amorphous segregant comprises C in an amount of about 5-15 vol. %.; and an interlayer disposed between the substrate and the magnetic recording layer.

18 . The stack of claim 17 , wherein the interlayer is a TiN—X layer, wherein X is a dopant comprising at least one of MgO, TiC, TiO, TiO 2 , ZrN, ZrC, ZrO, ZrO 2 , HfN, HfC, HfO, HfO 2 , C, SiO 2 , and BN.

19 . The stack of claim 17 , wherein the interlayer is a MgO—Y layer, wherein Y is a dopant comprising at least one of Ni, Ti, and Zr.

20 . The stack of claim 17 , wherein the FePt grains have a height/diameter aspect ratio of at least 1.

Assignees

• Nat Univ Singapore

Inventors

• Chen Jingsheng
• Dong kaifeng
• Ju Ganping
• Peng Yingguo

Classifications

• G11B5/851

  Coating a support with a magnetic layer by sputtering · CPC title

• G11B5/653 Primary

  containing Fe or Ni (containing Co G11B5/656; containing inorganic, non-oxide compounds of Si, N, P, B, H or C G11B5/657; containing oxygen G11B5/658) · CPC title

• G11B5/738

  Physics · mapped topic

• G11B5/7369

  Two or more non-magnetic underlayers, e.g. seed layers or barrier layers · CPC title

• G11B5/7368 Primary

  Non-polymeric layer under the lowermost magnetic recording layer (base layers having a non-magnetic layer under a soft magnetic layer G11B5/736; magnetic recording media substrates G11B5/739) · CPC title