Plasma cvd apparatus

Patent metadata

Field	Value
Publication number	US-2017283952-A1
Application number	US-201715626856-A
Country	US
Kind code	A1
Filing date	Jun 19, 2017
Priority date	Dec 22, 2014
Publication date	Oct 5, 2017
Grant date	—

Abstract

A plasma CVD apparatus includes a plasma source connected to an alternating current power supply or two or more alternating current power supplies, configured to generate plasma; and a magnet array configured by a plurality of magnets. The plasma source has an electrode group, which is configured by arranging n electrodes (n being a positive even integer), in an order of electrode numbers. Each of the electrodes of the electrode group is connected to the alternating current power supply. An exit of a flow channel for a precursor gas is formed between adjacent electrodes of the electrode group. The magnet array is arranged so that a north pole or a south pole of each of the magnets is facing the plasma source. In the magnet array, for at least one pair of adjacent two magnets, poles facing the plasma source are arranged to be the same.

First claim

What is claimed is:

1 . A plasma CVD apparatus comprising:
a plasma source connected to an alternating current power supply or two or more alternating current power supplies, configured to generate plasma; and a magnet array configured by a plurality of magnets, wherein the plasma source has an electrode group, the electrode group is configured by arranging n electrodes (n being an even integer greater than or equal to two) including a first electrode and a second electrode, in an order of electrode numbers from the first electrode, each of the electrodes of the electrode group is connected to the alternating current power supply, an exit of a flow channel for a precursor gas is formed between adjacent electrodes of the electrode group, the magnet array is arranged so that a north pole or a south pole of each of the magnets is facing the plasma source, and in the magnet array, for at least one pair of adjacent two magnets, poles facing the plasma source are arranged to be the same.

2 . The plasma CVD apparatus according to claim 1 ,
wherein in the magnet array, for all magnets, poles facing the plasma source are arranged to be the same.

3 . The plasma CVD apparatus according to claim 1 ,
wherein a number of magnets included in the magnet array is in a range from (n−1) to (n+1).

4 . The plasma CVD apparatus according to claim 1 ,
wherein the magnet array includes (n−1) magnets, and wherein the magnets are arranged substantially at positions facing the exits of the flow channels for the precursor gas arranged in the electrode group, respectively.

5 . The plasma CVD apparatus according to claim 1 ,
wherein the magnet array includes n magnets, and wherein the magnets are arranged substantially at positions facing the electrodes configuring the electrode group, respectively.

6 . The plasma CVD apparatus according to claim 1 ,
wherein an electric voltage applied to n/2 electrodes configuring the electrode group exhibits an opposite polarity to an electric voltage applied to remaining electrodes, and wherein electric voltages of the same polarity are applied to at least one pair of two adjacent electrodes.

7 . The plasma CVD apparatus according to claim 1 ,
wherein an electric voltage applied to n/2 electrodes configuring the electrode group exhibits an opposite polarity to an electric voltage applied to remaining electrodes, and wherein electric voltages of the same polarity are applied to even-numbered electrodes.

8 . The plasma CVD apparatus according to claim 1 further comprising
a conveyance unit configured to convey a body to be processed between the plasma source and the magnet array.

9 . The plasma CVD apparatus according to claim 1 ,
wherein each electrode of the electrode group includes a slit for ejecting plasma.

10 . The plasma CVD apparatus according to claim 1 ,
wherein the respective electrodes of the electrode group are connected to a single alternating current power supply.

Assignees

• Asahi Glass Co Ltd

Inventors

• Kawahara Hirotomo
• Maeshige Kazunobu
• Aomine Nobutaka
• Hanekawa Hiroshi

Classifications

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/60

  of insulating materials · CPC title

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title