Cmp polishing agent, manufacturing method thereof, and method for polishing substrate

Patent metadata

Field	Value
Publication number	US-2017278718-A1
Application number	US-201515511095-A
Country	US
Kind code	A1
Filing date	Aug 28, 2015
Priority date	Oct 9, 2014
Publication date	Sep 28, 2017
Grant date	—

Abstract

The present invention provides a CMP polishing agent containing polishing particles, a protective agent, and water, wherein the protective agent is a silsesquioxane polymer having a polar group. This provides a CMP polishing agent which can reduce polishing scratches produced due to polishing in a CMP process and has high polishing selectivity.

First claim

1 - 9 . (canceled)

10 . A CMP polishing agent comprising polishing particles, a protective agent, and water, wherein the protective agent is a silsesquioxane polymer having a polar group.

11 . The CMP polishing agent according to claim 10 , wherein the polishing particles are wet ceria particles.

12 . The CMP polishing agent according to claim 10 , wherein the silsesquioxane polymer is a water-soluble silsesquioxane polymer having either or both of a sulfo group and a carboxy group as the polar group.

13 . The CMP polishing agent according to claim 11 , wherein the silsesquioxane polymer is a water-soluble silsesquioxane polymer having either or both of a sulfo group and a carboxy group as the polar group.

14 . The CMP polishing agent according to claim 10 , wherein 0.1 part by mass or more and 1 part by mass or less of the silsesquioxane polymer is blended to 100 parts by mass of the CMP polishing agent.

15 . The CMP polishing agent according to claim 11 , wherein 0.1 part by mass or more and 1 part by mass or less of the silsesquioxane polymer is blended to 100 parts by mass of the CMP polishing agent.

16 . The CMP polishing agent according to claim 12 , wherein 0.1 part by mass or more and 1 part by mass or less of the silsesquioxane polymer is blended to 100 parts by mass of the CMP polishing agent.

17 . The CMP polishing agent according to claim 10 , wherein the CMP polishing agent is a CMP polishing agent for polishing an insulator film.

18 . The CMP polishing agent according to claim 10 , wherein pH of the CMP polishing agent is 3 or more and 7 or less.

19 . The CMP polishing agent according to claim 11 , wherein pH of the CMP polishing agent is 3 or more and 7 or less.

20 . The CMP polishing agent according to claim 12 , wherein pH of the CMP polishing agent is 3 or more and 7 or less.

21 . A method for polishing a substrate comprising pressing an insulator film on a polishing stop film formed on a substrate against a polishing pad and pressurizing the same while supplying the CMP polishing agent according to claim 10 onto the polishing pad configured to polish the substrate attached to an upper side of a turntable, and relatively moving the substrate and the turntable to polish the insulator film.

22 . A method for polishing a substrate comprising pressing an insulator film on a polishing stop film formed on a substrate against a polishing pad and pressurizing the same while supplying the CMP polishing agent according to claim 11 onto the polishing pad configured to polish the substrate attached to an upper side of a turntable, and relatively moving the substrate and the turntable to polish the insulator film.

23 . A method for polishing a substrate comprising pressing an insulator film on a polishing stop film formed on a substrate against a polishing pad and pressurizing the same while supplying the CMP polishing agent according to claim 12 onto the polishing pad configured to polish the substrate attached to an upper side of a turntable, and relatively moving the substrate and the turntable to polish the insulator film.

24 . The method for polishing a substrate according to claim 21 , wherein the polishing stop film is a polysilicon film, and the insulator film is a silicon oxide film.

25 . The method for polishing a substrate according to claim 22 , wherein the polishing stop film is a polysilicon film, and the insulator film is a silicon oxide film.

26 . The method for polishing a substrate according to claim 23 , wherein the polishing stop film is a polysilicon film, and the insulator film is a silicon oxide film.

27 . A method for manufacturing the CMP polishing agent according to claim 10 , the method comprising a step of: adding a silsesquioxane polymer synthesized by a hydrolysis and a polycondensation reaction of an organic trialkoxysilane monomer containing a polar group as the protective agent.

28 . A method for manufacturing the CMP polishing agent according to claim 11 , the method comprising a step of: adding a silsesquioxane polymer synthesized by a hydrolysis and a polycondensation reaction of an organic trialkoxysilane monomer containing a polar group as the protective agent.

29 . A method for manufacturing the CMP polishing agent according to claim 12 , the method comprising a step of: adding a silsesquioxane polymer synthesized by a hydrolysis and a polycondensation reaction of an organic trialkoxysilane monomer containing a polar group as the protective agent.

Assignees

• Shinetsu Chemical Co

Inventors

• Takahashi Mitsuhito

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title