Heat dissipation component for semiconductor element

Patent metadata

Field	Value
Publication number	US-2017268834-A1
Application number	US-201515508187-A
Country	US
Kind code	A1
Filing date	Sep 1, 2015
Priority date	Sep 2, 2014
Publication date	Sep 21, 2017
Grant date	—

Abstract

A heat dissipation component for a semiconductor element includes: a composite part containing 50-80 vol % diamond powder with the remainder having metal including aluminum, the diamond powder having a particle diameter volume distribution first peak at 5-25 μm and a second peak at 55-195 μm. A ratio between a volume distribution area at particle diameters of 1-35 μm and a volume distribution area at particle diameters of 45-205 μm is 1:9 to 4:6; surface layers on both composite part principal surfaces, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and a crystalline Ni layer and an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 μm, and the Au layer having a film thickness of 0.05 μm or larger.

First claim

1 . A heat dissipation component for a semiconductor element, the heat dissipation component comprising:
a composite part containing 50-80 vol % diamond powder with the remainder being composed of metal including aluminum, the diamond powder being a diamond powder in which a first peak of a volume distribution of particle diameter is at 5-25 μm and in which a second peak is at 55-195 μm, wherein a ratio between an area of a volume distribution at particle diameters of 1-35 μm and an area of a volume distribution at particle diameters of 45-205 μm is 1:9 to 4:6; surface layers on both principal surfaces of the composite part, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and (1) a crystalline Ni layer and (2) an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 μm, the Au layer having a film thickness of 0.05 μm or larger.

2 . The heat dissipation component for a semiconductor element according to claim 1 , wherein the Ni layer and the Au layer are plating films that are formed by plate processing, and wherein peel strengths of the plating films are 50 N/cm or higher.

3 . The heat dissipation component for a semiconductor element according to claim 1 , wherein a semiconductor element to be mounted is a semiconductor laser element or a high-frequency element comprising GaN, GaAs, or SiC.

4 . The heat dissipation component for a semiconductor element according to claim 1 , wherein the composite part is an aluminum-diamond composite body produced by a squeeze casting method, the aluminum-diamond composite body having a thermal conductivity of 400 W/mK or higher at a temperature of 25° C., a linear thermal expansion coefficient of 5.0×10 −6 -10.0×10 −6 /K at a temperature of 25-150° C., and a surface roughness (Ra) of both principal surfaces of 1 μm or less.

5 . The heat dissipation component for a semiconductor element according to claim 1 , wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β-silicon carbide layer chemically bonded to a surface of the particle.

6 . The heat dissipation component for a semiconductor element according to claim 2 , wherein a semiconductor element to be mounted is a semiconductor laser element or a high-frequency element comprising GaN, GaAs, or SiC.

7 . The heat dissipation component for a semiconductor element according to claim 2 , wherein the composite part is an aluminum-diamond composite body produced by a squeeze casting method, the aluminum-diamond composite body having a thermal conductivity of 400 W/mK or higher at a temperature of 25° C., a linear thermal expansion coefficient of 5.0×10 −6 -10.0×10 −6 /K at a temperature of 25-150° C., and a surface roughness (Ra) of both principal surfaces of 1 μm or less.

8 . The heat dissipation component for a semiconductor element according to claim 3 , wherein the composite part is an aluminum-diamond composite body produced by a squeeze casting method, the aluminum-diamond composite body having a thermal conductivity of 400 W/mK or higher at a temperature of 25° C., a linear thermal expansion coefficient of 5.0×10 −6 -10.0×10 −6 /K at a temperature of 25-150° C., and a surface roughness (Ra) of both principal surfaces of 1 μm or less.

9 . The heat dissipation component for a semiconductor element according to claim 6 , wherein the composite part is an aluminum-diamond composite body produced by a squeeze casting method, the aluminum-diamond composite body having a thermal conductivity of 400 W/mK or higher at a temperature of 25° C., a linear thermal expansion coefficient of 5.0×10 −6 -10.0×10 −6 /K at a temperature of 25-150° C., and a surface roughness (Ra) of both principal surfaces of 1 μm or less.

10 . The heat dissipation component for a semiconductor element according to claim 2 , wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β-silicon carbide layer chemically bonded to a surface of the particle.

11 . The heat dissipation component for a semiconductor element according to claim 3 , wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β-silicon carbide layer chemically bonded to a surface of the particle.

12 . The heat dissipation component for a semiconductor element according to claim 6 , wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β-silicon carbide layer chemically bonded to a surface of the particle.

13 . The heat dissipation component for a semiconductor element according to claim 4 , wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β-silicon carbide layer chemically bonded to a surface of the particle.

14 . The heat dissipation component for a semiconductor element according to claim 7 , wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β-silicon carbide layer chemically bonded to a surface of the particle.

15 . The heat dissipation component for a semiconductor element according to claim 8 , wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β-silicon carbide layer chemically bonded to a surface of the particle.

16 . The heat dissipation component for a semiconductor element according to claim 9 , wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β-silicon carbide layer chemically bonded to a surface of the particle.

Assignees

• Denka Company Ltd

Inventors

• Ishihara Yosuke
• Miyakawa Takeshi
• Koyanagi Kazunori

Classifications

• H10W70/02

  of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) · CPC title

• H10W40/258

  Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title

• H10W40/254

  Diamond · CPC title

• H10W40/25

  characterised by their materials · CPC title

• Y10T428/12069

  Plural nonparticulate metal components · CPC title