Thin film transistor array panel and method of manufacturing the same
US-9224867-B2 · Dec 29, 2015 · US
US2017229528A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017229528-A1 |
| Application number | US-201715412605-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 23, 2017 |
| Priority date | Feb 9, 2016 |
| Publication date | Aug 10, 2017 |
| Grant date | — |
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An electro-optic device includes an element substrate. The element substrate has a display section and a peripheral circuit section. The display section has a plurality of pixels arranged therein. The peripheral circuit section is disposed around the display section and contains peripheral circuits. The display section has, for each pixel, an organic EL element and a transistor for driving the organic EL element. The organic EL element is disposed above the transistor with a light-reflective layer and an insulating layer in between. The insulating layer has a different film thickness in accordance with to the display color of the pixel. An insulating layer in the peripheral circuit section has the same layer structure as the insulating layer having a largest film thickness in the display section.
Opening claim text (preview).
What is claimed is: 1 . An electro-optic device comprising: a display section in which a plurality of pixels are arranged; a peripheral circuit section containing a peripheral circuit, the peripheral circuit section being disposed around the display section; and an element substrate having the display section and the peripheral circuit section, wherein the display section includes, for each pixel, a light-emitting element and a transistor for driving the light-emitting element, the light-emitting element is disposed above the transistor with a light-reflective layer and an insulating layer in between, the insulating layer has a film thickness that differs in accordance with a display color of each pixel, and an insulating layer in the peripheral circuit section has a layer structure identical to a layer structure of the insulating layer having a largest film thickness in the display section. 2 . The electro-optic device according to claim 1 , wherein the light-reflective layer is disposed by being split in each pixel and the insulating layer covers a surface on which the light-reflective layer has been disposed, includes an insulating film having a depression formed in a gap between split adjacent light-reflective layers, and includes an embedded insulating film that is embedded in the depression. 3 . The electro-optic device according to claim 2 , wherein the peripheral circuit includes a routed wire having light-blocking properties and being connected to a cathode of the light-emitting element, and the routed wire is formed on the insulating film having the depression. 4 . The electro-optic device according to claim 1 , wherein the insulating layer include a plurality of layers composed of different materials. 5 . An electronic apparatus comprising the electro-optic device according to claim 1 . 6 . An electronic apparatus comprising the electro-optic device according to claim 2 . 7 . An electronic apparatus comprising the electro-optic device according to claim 3 . 8 . An electronic apparatus comprising the electro-optic device according to claim 4 .
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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