Solution Process for Fabricating High-performance Organic Thin-film Transistors

US2017200895A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2017200895-A1
Application numberUS-201715401035-A
CountryUS
Kind codeA1
Filing dateJan 8, 2017
Priority dateJan 8, 2016
Publication dateJul 13, 2017
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.

First claim

Opening claim text (preview).

1 . A solution-based method of fabricating a channel semiconductor for organic thin-film transistors comprising: dissolving an organic semiconductor in a solvent with a mediating polymer at a percentage ratio by weight of semiconductor:mediating polymer ranging from 5:95 to 95:5 to produce a solution; and spin casting or printing said solution on a substrate to produce a channel semiconductor; wherein the resulting organic thin-film transistor with said channel semiconductor exhibits a field effect mobility of greater than or equal to 2 cm 2 V −1 s −1 and a current on/off ratio of greater than or equal to 10 5 . 2 . The method according to claim 1 , wherein the percentage ratio by weight of semiconductor:mediating polymer ranges from 20:80 to 80:20. 3 . The method according to claim 1 , wherein the resulting organic thin-film transistor with said channel semiconductor has a field effect mobility of greater than or equal to 5 cm 2 V −1 s −1 and a current on/off ratio of greater than or equal to 10 6 . 4 . The method according to claim 1 , wherein the resulting organic thin-film transistor with said channel semiconductor has a field effect mobility of greater than or equal to 8 cm 2 V −1 s −1 and a current on/off ratio of greater than or equal to 10 6 . 5 . The method according to claim 1 , wherein the percentage ratio by weight of semiconductor:mediating polymer ranging from 30:70 to 70:30. 6 . The method according to claim 1 , wherein the mediating polymer comprises polyacrylonitrile, polystyrene, poly(methyl methacrylate), poly(methyl methacrylate-alt-styrene), polyvinyl chloride, or mixtures thereof. 7 . The method according to claim 1 , wherein the semiconductor comprises a polymer semiconductor including a diketopyrrolopyrrole-based polymer or regioregular poly(3-hexylthiophene), or a mixture thereof. 8 . The method according to claim 1 , wherein the semiconductor comprises a polymer represented by the following formula: 9 . The method according to claim 1 , wherein the semiconductor comprises one or more organic small molecular compound. 10 . The method according to claim 1 , further comprising drying with thermal annealing after spin casting or printing of solution on a substrate. 11 . The method according to claim 1 , wherein the substrate comprises a metalized plastic substrate coated with a thin layer of metal oxide. 12 . The method according to claim 1 , wherein the metal oxide is aluminum oxide or hafnium oxide. 13 . An organic thin film transistor (OTFT) device having an organic semiconductor-based channel, the OTFT device comprising: a channel comprising an organic semiconductor crystallized within a mediating polymer in the OTFT device on a substrate, the mediating polymer selected from polyacrylonitrile, polystyrene, poly(methyl methacrylate), poly(methyl methacrylate-alt-styrene), polyvinyl chloride, or a mixture thereof at a percentage ratio by weight of semiconductor:mediating polymer ranging from 5:95 to 95:5; wherein the OTFT device has a field effect mobility of greater than or equal to 2 cm 2 V −1 s −1 and a current on/off ratio of greater than or equal to 10 5 . 14 . The OTFT device of claim 13 , wherein the semiconductor is selected from a diketopyrrolopyrrole-based polymer or regioregular poly(3-hexylthiophene), or a mixture thereof. 15 . The OTFT device of claim 13 , wherein the semiconductor comprises a polymer represented by the following formula: 16 . The OTFT device of claim 13 , wherein the substrate comprises a metalized plastic coated with a thin layer of metal oxide. 17 . The OTFT device of claim 13 , comprises said channel semiconductor of an organic semiconductor crystallized in the mediating polymer has a field effect mobility of greater than or equal to 5 cm 2 V −1 s −1 and a current on/off ratio of greater than or equal to 10 6 . 18 . The OTFT device of claim 13 , comprises said channel semiconductor of an organic semiconductor crystallized in the mediating polymer has a field effect mobility of greater than or equal to 8 cm 2 V −1 s −1 and a current on/off ratio of greater than or equal to 10 6 . 19 . The OTFT device of claim 13 , wherein the percentage ratio by weight of semiconductor:mediating polymer ranges from 20:80 to 80:20.

Assignees

Inventors

Classifications

  • containing one or more sulfur atoms as the only heteroatom, e.g. benzothiophene · CPC title

  • alternating · CPC title

  • TFT applications · CPC title

  • Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain (C09D107/00 - C09D157/00, C09D161/00 take precedence); Coating compositions based on derivatives of such polymers · CPC title

  • Homopolymers or copolymers of methyl methacrylate · CPC title

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What does patent US2017200895A1 cover?
The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polym…
Who is the assignee on this patent?
Univ Hong Kong Baptist Univ
What technology area does this patent fall under?
Primary CPC classification C09D11/12. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Jul 13 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).