Ink jet recording method and ink jet recording apparatus
US-2024360332-A1 · Oct 31, 2024 · US
US2017200895A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017200895-A1 |
| Application number | US-201715401035-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 8, 2017 |
| Priority date | Jan 8, 2016 |
| Publication date | Jul 13, 2017 |
| Grant date | — |
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The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.
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1 . A solution-based method of fabricating a channel semiconductor for organic thin-film transistors comprising: dissolving an organic semiconductor in a solvent with a mediating polymer at a percentage ratio by weight of semiconductor:mediating polymer ranging from 5:95 to 95:5 to produce a solution; and spin casting or printing said solution on a substrate to produce a channel semiconductor; wherein the resulting organic thin-film transistor with said channel semiconductor exhibits a field effect mobility of greater than or equal to 2 cm 2 V −1 s −1 and a current on/off ratio of greater than or equal to 10 5 . 2 . The method according to claim 1 , wherein the percentage ratio by weight of semiconductor:mediating polymer ranges from 20:80 to 80:20. 3 . The method according to claim 1 , wherein the resulting organic thin-film transistor with said channel semiconductor has a field effect mobility of greater than or equal to 5 cm 2 V −1 s −1 and a current on/off ratio of greater than or equal to 10 6 . 4 . The method according to claim 1 , wherein the resulting organic thin-film transistor with said channel semiconductor has a field effect mobility of greater than or equal to 8 cm 2 V −1 s −1 and a current on/off ratio of greater than or equal to 10 6 . 5 . The method according to claim 1 , wherein the percentage ratio by weight of semiconductor:mediating polymer ranging from 30:70 to 70:30. 6 . The method according to claim 1 , wherein the mediating polymer comprises polyacrylonitrile, polystyrene, poly(methyl methacrylate), poly(methyl methacrylate-alt-styrene), polyvinyl chloride, or mixtures thereof. 7 . The method according to claim 1 , wherein the semiconductor comprises a polymer semiconductor including a diketopyrrolopyrrole-based polymer or regioregular poly(3-hexylthiophene), or a mixture thereof. 8 . The method according to claim 1 , wherein the semiconductor comprises a polymer represented by the following formula: 9 . The method according to claim 1 , wherein the semiconductor comprises one or more organic small molecular compound. 10 . The method according to claim 1 , further comprising drying with thermal annealing after spin casting or printing of solution on a substrate. 11 . The method according to claim 1 , wherein the substrate comprises a metalized plastic substrate coated with a thin layer of metal oxide. 12 . The method according to claim 1 , wherein the metal oxide is aluminum oxide or hafnium oxide. 13 . An organic thin film transistor (OTFT) device having an organic semiconductor-based channel, the OTFT device comprising: a channel comprising an organic semiconductor crystallized within a mediating polymer in the OTFT device on a substrate, the mediating polymer selected from polyacrylonitrile, polystyrene, poly(methyl methacrylate), poly(methyl methacrylate-alt-styrene), polyvinyl chloride, or a mixture thereof at a percentage ratio by weight of semiconductor:mediating polymer ranging from 5:95 to 95:5; wherein the OTFT device has a field effect mobility of greater than or equal to 2 cm 2 V −1 s −1 and a current on/off ratio of greater than or equal to 10 5 . 14 . The OTFT device of claim 13 , wherein the semiconductor is selected from a diketopyrrolopyrrole-based polymer or regioregular poly(3-hexylthiophene), or a mixture thereof. 15 . The OTFT device of claim 13 , wherein the semiconductor comprises a polymer represented by the following formula: 16 . The OTFT device of claim 13 , wherein the substrate comprises a metalized plastic coated with a thin layer of metal oxide. 17 . The OTFT device of claim 13 , comprises said channel semiconductor of an organic semiconductor crystallized in the mediating polymer has a field effect mobility of greater than or equal to 5 cm 2 V −1 s −1 and a current on/off ratio of greater than or equal to 10 6 . 18 . The OTFT device of claim 13 , comprises said channel semiconductor of an organic semiconductor crystallized in the mediating polymer has a field effect mobility of greater than or equal to 8 cm 2 V −1 s −1 and a current on/off ratio of greater than or equal to 10 6 . 19 . The OTFT device of claim 13 , wherein the percentage ratio by weight of semiconductor:mediating polymer ranges from 20:80 to 80:20.
containing one or more sulfur atoms as the only heteroatom, e.g. benzothiophene · CPC title
alternating · CPC title
TFT applications · CPC title
Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain (C09D107/00 - C09D157/00, C09D161/00 take precedence); Coating compositions based on derivatives of such polymers · CPC title
Homopolymers or copolymers of methyl methacrylate · CPC title
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