Infrared detector
US-2016218233-A1 · Jul 28, 2016 · US
Photoelectric conversion element having quantum structure using indirect transition conductor material
US2017200841A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017200841-A1 |
| Application number | US-201615378088-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 14, 2016 |
| Priority date | Jan 12, 2016 |
| Publication date | Jul 13, 2017 |
| Grant date | — |
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Abstract
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A photoelectric conversion element includes a photoelectric conversion layer having the quantum structure and utilizes intersubband transition in a conduction band. The photoelectric conversion element includes a superlattice semiconductor layer in which a barrier layer and a quantum dot layer as a quantum layer are alternately and repeatedly stacked. The barrier layer includes an indirect transition semiconductor material, and the quantum dot layer has a nano-structure including a direct transition semiconductor material. The indirect transition semiconductor material constituting the barrier layer has a bandgap of more than 1.42 eV at room temperature.
First claim
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What is claimed is: 1 . A photoelectric conversion element having a quantum structure using an indirect transition semiconductor material, the photoelectric conversion element utilizing intersubband transition in a conduction band and comprising: a photoelectric conversion layer having a quantum structure; and a superlattice semiconductor layer in which a barrier layer and a quantum layer are alternately and repeatedly stacked, wherein the barrier layer includes an indirect transition semiconductor material; the quantum layer has a nano-structure including a direct transition semiconductor material; and the indirect transition semiconductor material has a bandgap of more than 1.42 eV at room temperature. 2 . The photoelectric conversion element having a quantum structure using an indirect transition semiconductor material according to claim 1 , wherein the superlattice semiconductor layer is doped with an impurity. 3 . The photoelectric conversion element having a quantum structure using an indirect transition semiconductor material according to claim 1 , wherein the quantum layer is a quantum dot layer having a quantum dot. 4 . The photoelectric conversion element having a quantum structure using an indirect transition semiconductor material according to claim 3 , wherein the quantum dot layer contains the quantum dot and a cap; the quantum dot contains In; and the cap contains In x Ga 1-x As (0≦x≦1). 5 . The photoelectric conversion element having a quantum structure using an indirect transition semiconductor material according to claim 1 , wherein the indirect transition semiconductor material contains at least one of Al and P. 6 . The photoelectric conversion element having a quantum structure using an indirect transition semiconductor material according to claim 1 , further comprising substrate composed of GaAs.
Assignees
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Classifications
Solar cells from Group III-V materials · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L31/035236Primary
Electricity · mapped topic
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- What does patent US2017200841A1 cover?
- A photoelectric conversion element includes a photoelectric conversion layer having the quantum structure and utilizes intersubband transition in a conduction band. The photoelectric conversion element includes a superlattice semiconductor layer in which a barrier layer and a quantum dot layer as a quantum layer are alternately and repeatedly stacked. The barrier layer includes an indirect tran…
- Who is the assignee on this patent?
- Sharp Kk, Univ Tokyo
- What technology area does this patent fall under?
- Primary CPC classification H01L31/035236. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jul 13 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).