Methods of forming patterns using compositions for an underlayer of photoresist

Patent metadata

Field	Value
Publication number	US-2017199459-A1
Application number	US-201715405612-A
Country	US
Kind code	A1
Filing date	Jan 13, 2017
Priority date	Jan 13, 2016
Publication date	Jul 13, 2017
Grant date	—

Abstract

A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.

First claim

What is claimed is:

1 . A method of forming a pattern, comprising:
preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate or a layer on the substrate using the photoresist pattern.

2 . The method according to claim 1 , wherein each of the isocyanurate units includes a self-crosslinking side chain moiety.

3 . The method according to claim 1 , wherein the repeating unit includes at least two different types of self-crosslinking side chain moieties.

4 . The method according to claim 2 , wherein the repeating unit is represented by Chemical Formula 1:

wherein, in Chemical Formula 1, R 1 and R 2 each independently represents a C 1 -C 10 chain-shaped or ring-shaped hydrocarbon group, the hydrocarbon group is saturated or includes at least one unsaturated bond, and the hydrocarbon group is unsubstituted or includes at least one hetero atom,
wherein X and Y each represents the self-crosslinking side chain moiety, X and Y each independently represents a C 1 -C 12 chain-shaped or ring-shaped hydrocarbon group, at least one of X or Y includes a hetero atom, and X and Y are different from each other.

5 . The method according to claim 4 , wherein the repeating unit includes at least one of structures represented by Chemical Formulae 1-1 to 1-4:

6 . The method according to claim 2 , wherein the repeating unit includes at least three isocyanurate units.

7 . The method according to claim 6 , wherein the repeating unit is represented by Chemical Formula 2:

8 . The method according to claim 1 , further comprising preparing an acid generator.

9 . The method according to claim 8 , wherein the composition consists of the self-crosslinkable polymer, the acid generator and the solvent, and is devoid of a cross-linking agent.

10 . A method of forming a pattern, comprising:
preparing a composition that includes a self-crosslinkable polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure, and a solvent; coating the composition on an object layer to form an underlayer; forming a photoresist layer on the underlayer; performing an exposure process on the photoresist layer such that the photoresist layer is divided into an exposed portion and a non-exposed portion; removing one of the exposed portion or the non-exposed portion to form a photoresist pattern; and patterning the object layer using the photoresist pattern.

11 . The method of claim 10 , wherein a refractive index of the underlayer exceeds about 1.9.

12 . The method of claim 11 , wherein the refractive index of the underlayer is in a range from about 1.94 to about 2.

13 . The method of claim 10 , wherein the exposure process is performed using an ArF light source and an ArF immersion light source.

14 . The method of claim 10 , wherein forming the underlayer includes thermally cross-linking the self-crosslinkable polymer included in the composition.

15 . The method of claim 14 , wherein thermally cross-linking includes a baking process performed at a temperature from about 150° C. to about 250° C.

16 . The method according to claim 10 , wherein each of the isocyanurate units includes a self-crosslinking side chain moiety.

17 . The method according to claim 10 , wherein the repeating unit includes at least two different types of self-crosslinking side chain moieties.

18 . The method according to claim 16 , wherein the repeating unit is represented by Chemical Formula 1:

wherein, in Chemical Formula 1, R 1 and R 2 each independently represents a C 1 -C 10 chain-shaped or ring-shaped hydrocarbon group, the hydrocarbon group is saturated or includes at least one unsaturated bond, and the hydrocarbon group is unsubstituted or includes at least one hetero atom,
wherein X and Y each represents the self-crosslinking side chain moiety, X and Y each independently represents a C 1 -C 12 chain-shaped or ring-shaped hydrocarbon group, at least one of X or Y includes a hetero atom, and X and Y are different from each other.

19 . The method according to claim 18 , wherein the repeating unit includes at least one of structures represented by Chemical Formulae 1-1 to 1-4:

20 . A method of forming a pattern for a semiconductor device, comprising:
preparing an underlayer composition that includes a solvent and a polymer including a repeating unit having a plurality of isocyanurate units in which at least one isocyanurate unit having a first chemical composition is connected to another isocyanurate unit having a second chemical composition different from the first chemical composition; applying the underlayer composition on a semiconductor substrate to form an underlayer; forming a photoresist layer on the underlayer; etching a portion of the photoresist layer to form a photoresist pattern; and patterning the semiconductor substrate or a layer on the semiconductor substrate using the photoresist pattern.

Assignees

• Samsung Electronics Co Ltd
• Dongjin Semichem Co Ltd

Inventors

• Ryu Jin-A
• Lee Jung-Youl
• Moon Kyung-Lyul
• Kang Yool
• Kim Hyun-Jin
• Jeoung Yu-Jin
• Han Man-Ho

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P50/73

  using masks for insulating materials · CPC title