Fluoride phosphor, method of manufacturing the same, and light emitting device

Patent metadata

Field	Value
Publication number	US-2017198218-A1
Application number	US-201615272953-A
Country	US
Kind code	A1
Filing date	Sep 22, 2016
Priority date	Jan 13, 2016
Publication date	Jul 13, 2017
Grant date	—

Abstract

A method of manufacturing a fluoride phosphor represented by a chemical formula A 3 MF 7 :Mn 4+ includes forming a first mixture by mixing a first raw material containing A 2 MF 6 and a second raw material containing AF or AHF 2 , forming a second mixture by mixing the first mixture and a sintering aid, and firing the second mixture. In the chemical formula, A is at least one selected from Li, Na, K, Rb, Cs and mixtures thereof, and M is at least one selected from Si, Ti, Zr, Hf, Ge, Sn, and mixtures thereof.

First claim

1 . A method of manufacturing a fluoride phosphor represented by a chemical formula A 3 MF 7 :Mn 4+ , the method comprising:
forming a first mixture by mixing a first raw material containing A 2 MF 6 and a second raw material containing AF or AHF 2 ; forming a second mixture by mixing the first mixture and a sintering aid; and firing the second mixture, wherein in the chemical formula, A is selected from the group consisting of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs) and mixtures thereof, and M is selected from the group consisting of silicon (Si), titanium (Ti), zirconium (Zr), hafnium (Hf), germanium (Ge), tin (Sn) and mixtures thereof.

2 . The method of claim 1 , wherein the sintering aid is a material containing fluorine.

3 . The method of claim 2 , wherein the sintering aid comprises at least one of NH 4 F, NH 4 HF 2 , F 2 , XeF 2 , and KHF 2 .

4 . The method of claim 1 , wherein the sintering aid is added to the first mixture in an amount of more than 5 wt %.

5 . The method of claim 1 , wherein the firing is performed at a temperature higher than 250° C. and lower than 400° C.

6 . The method of claim 1 , wherein the firing is performed in an atmosphere of argon (Ar), nitrogen (N 2 ), fluorine (F 2 ), nitrogen/fluorine (N 2 /F 2 ) or nitrogen/hydrogen (N 2 /H 2 ).

7 . The method of claim 1 , wherein the firing is performed for 4 to 8 hours.

8 . The method of claim 1 , wherein the first and second raw materials are mixed in powder form.

9 . The method of claim 1 , wherein the first and second raw materials are mixed in a molar ratio of from 1:0.8 to 1:1.5.

10 . The method of claim 1 , wherein the first raw material is an A 2 MF 6 :Mn 4+ phosphor, and the second raw material is AF.

11 . The method of claim 10 , wherein the first raw material is a K 2 SiF 6 :Mn 4+ phosphor, and the second raw material is at least one of KF, RbF, and CsF.

12 . The method of claim 1 , wherein the first raw material is a mixture of A 2 MF 6 and A 2 MnF 6 , and the second raw material is AF.

13 . The method of claim 12 , wherein the first raw material is a mixture of K 2 SiF 6 and K 2 MnF 6 , and the second raw material is KF.

14 . The method of claim 1 , further comprising coating a phosphor particle produced by the firing with an ionic liquid.

15 . The method of claim 14 , wherein the ionic liquid comprises 1-methyl-1-propylpyrrolidinium Bis (trifluoromethanesulfonyl) imide.

16 . A method of manufacturing a fluoride phosphor represented by a chemical formula A 3 MF 7 :Mn 4+ , the method comprising:
forming a first mixture by mixing a first raw material containing A 2 MF 6 and a second raw material containing AF or AHF 2 ; forming a second mixture by mixing the first mixture and a sintering aid; manufacturing a phosphor particle by firing the second mixture; and coating the phosphor particle with an ionic liquid, wherein in the chemical formula, A is selected from the group consisting of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), and mixtures thereof, and M is selected from the group consisting of silicon (Si), titanium (Ti), zirconium (Zr), hafnium (Hf), germanium (Ge), tin (Sn), and mixtures thereof.

17 - 20 . (canceled)

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Do Hoon
• Takamasa Izawa
• Yoon Chul Soo
• Choi Sung Woo

Classifications

• C09K11/616 Primary

  with alkali or alkaline earth metals · CPC title

• C09K11/617 Primary

  Silicates · CPC title

• C09K11/675

  with alkali or alkaline earth metals · CPC title

• C09K11/665

  with alkali or alkaline earth metals · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title