ZTCR poly resistor in replacement gate flow
US-8927385-B2 · Jan 6, 2015 · US
Methods for producing polysilicon resistors
US2017194417A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017194417-A1 |
| Application number | US-201715465715-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 22, 2017 |
| Priority date | Oct 8, 2013 |
| Publication date | Jul 6, 2017 |
| Grant date | — |
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Abstract
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A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.
First claim
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What is claimed: 1 . A method for producing a polysilicon resistor device, comprising: forming a polysilicon layer; forming an implantation mask over said polysilicon layer exposing a pre-defined subarea of said polysilicon layer; implanting dopant atoms into said pre-defined subarea of said polysilicon layer through said implantation mask; and creating diffusion of said dopant atoms, wherein said dopant atoms diffuse at most within said polysilicon layer. 2 . The method of claim 1 , wherein said dopant atoms diffuse at most within a portion of said polysilicon layer. 3 . The method of claim 1 , wherein forming said polysilicon layer comprises forming said polysilicon layer as an undoped layer. 4 . The method of claim 1 , wherein forming said polysilicon layer is implemented by depositing polysilicon over an insulative layer. 5 . The method of claim 1 , wherein the pre-defined subarea is a subarea in a central region of said polysilicon layer. 6 . The method of claim 1 , wherein said dopant atoms are selected from a group composed of phosphorous atoms and arsenic atoms. 7 . The method of claim 4 , wherein the dopant atoms are selected from atoms that do not diffuse into said insulative layer. 8 . The method of claim 2 , wherein the diffusion of said dopant atoms is created by annealing of at least said portion of said polysilicon layer. 9 . The method of claim 1 , wherein the dopant atoms comprise deep energy level donors. 10 . The method of claim 9 , wherein said deep energy level donors are selected from a group composed of selenium, sulfur and nitrogen.
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- What does patent US2017194417A1 cover?
- A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.
- Who is the assignee on this patent?
- Infineon Technologies Ag
- What technology area does this patent fall under?
- Primary CPC classification H01L28/20. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jul 06 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).