Synapse and neuromorphic device including the same

Patent metadata

Field	Value
Publication number	US-2017193365-A1
Application number	US-201615389189-A
Country	US
Kind code	A1
Filing date	Dec 22, 2016
Priority date	Dec 30, 2015
Publication date	Jul 6, 2017
Grant date	—

Abstract

A neuromorphic device includes a synapse. The synapse, according to an embodiment, includes a first electrode, a second electrode spaced apart from the first electrode, an oxygen-containing layer disposed between the first electrode and the second electrode, the oxygen-containing layer including oxygen ions, and a reactive metal layer disposed between the oxygen-containing layer and the second electrode. The oxygen-containing layer includes oxygen ions. The reactive metal layer is capable of reacting with the oxygen ions of the oxygen-containing layer. A width of the reactive metal layer decreases along a direction toward the oxygen-containing layer from the second electrode.

First claim

What is claimed is:

1 . A synapse comprising:
a first electrode; a second electrode spaced apart from the first electrode; an oxygen-containing layer disposed between the first electrode and the second electrode, the oxygen-containing layer including oxygen ions; and a reactive metal layer disposed between the oxygen-containing layer and the second electrode, the reactive metal layer being capable of reacting with the oxygen ions of the oxygen-containing layer, and wherein a width of the reactive metal layer decreases along a direction toward the oxygen-containing layer from the second electrode.

2 . The synapse of claim 1 , further comprising:
an insulating layer disposed against a side surface of the reactive metal layer and disposed between the first electrode and the second electrode, the insulating layer encircling the reactive metal layer.

3 . The synapse of claim 1 , wherein a side surface of the reactive metal layer extends between the first electrode and the second electrode at an oblique angle.

4 . The synapse of claim 1 , wherein a side surface of the reactive metal layer extends between the first electrode and the second electrode, the side surface having a stair shape.

5 . The synapse of claim 1 , wherein the reactive metal layer includes a first portion and a second portion, a width of the first portion of the reactive metal layer being substantially constant from the second electrode to a certain distance from the second electrode, a width of the second portion decreasing from the certain distance to the oxygen-containing layer.

6 . The synapse of claim 1 , wherein a dielectric oxide layer forms or disappears according to a voltage or current applied through the first electrode and the second electrode, the dielectric oxide layer being formed in the reactive metal layer at an interface between the reactive metal layer and the oxygen-containing layer by a reaction between the reactive metal layer and the oxygen ions.

7 . The synapse of claim 6 , wherein the width of a first portion of the reactive metal layer is substantially constant from the second electrode to a certain distance from the second electrode, and a width of a second portion of the reactive metal layer decreases from the certain distance to the oxygen-containing layer, and
wherein the dielectric oxide layer forms or disappears in the second portion of the reactive metal layer.

8 . The synapse of claim 1 , wherein the synapse undergoes a depression operation when first electrical pulses are applied to the synapse through the first and second electrodes, an electrical conductivity of the synapse decreasing when a number of the first electrical pulses increases, the first electrical pulses having a first polarity, and
wherein the synapse undergoes a potentiation operation when second electrical pulses are applied to the synapse through the first and second electrodes, the electrical conductivity of the synapse increasing when a number of the second electrical pulses increases, the second electrical pulses having a second polarity opposite to the first polarity.

9 . A neuromorphic device comprising:
a first neuron; a second neuron; a first line connected to the first neuron, the first line extending in a first direction; a second line connected to the second neuron, the second line extending in a second direction and intersecting the first line; and a synapse disposed in an intersection region between the first line and the second line, wherein the synapse comprises: an oxygen-containing layer including oxygen ions; and a reactive metal layer disposed between the oxygen-containing layer and the second line, the reactive metal layer being capable of reacting with the oxygen ions of the oxygen-containing layer, and wherein a width of the reactive metal layer decreases along a third direction toward the oxygen-containing layer from the second line.

10 . The neuromorphic device of claim 9 , wherein a dielectric oxide layer forms or disappears according to a voltage or current applied to the synapse through the first line and the second line, the dielectric oxide layer being formed in the reactive metal layer at an interface between the reactive metal layer and the oxygen-containing layer by a reaction between the reactive metal layer and the oxygen ions.

11 . The neuromorphic device of claim 10 , wherein an electrical conductivity of the synapse decreases as a thickness of the dielectric oxide layer increases, and
wherein the electrical conductivity of the synapse increases as the thickness of the dielectric oxide layer decreases.

12 . The neuromorphic device of claim 10 , wherein at least one of the first neuron and the second neuron drives at least one of the first line and the second line by first and second electrical pulses, the first and second electrical pulses being applied to the synapse through the at least one of the first line and the second line, the first electrical pulses having a first polarity, the second electrical pulses having a second polarity opposite to the first polarity,
wherein a thickness of the dielectric oxide layer increases when a number of the first electrical pulses applied to the synapse increases, and wherein the thickness of the dielectric oxide layer decreases when a number of the second electrical pulses applied to the synapse increases.

13 . The neuromorphic device of claim 12 , wherein a volume of the dielectric oxide layer increases at a growth rate, the growth rate increasing as the number of the first electrical pulses increases.

14 . The neuromorphic device of claim 9 , wherein the synapse further comprises:
an insulating layer disposed against a side surface of the reactive metal layer and disposed between the first line and the second line, the insulating layer encircling the reactive metal layer.

15 . The neuromorphic device of claim 9 , wherein a side surface of the reactive metal layer extends between the first line and the second line at an oblique angle.

16 . The neuromorphic device of claim 9 , wherein a side surface of the reactive metal layer extends between the first line and the second line, the side surface having a stair shape.

17 . The neuromorphic device of claim 9 , wherein the reactive metal layer includes a first portion and a second portion, a width of the first portion being substantially constant from the second line to a certain distance from the second line, a width of the second portion decreasing from the certain distance to the oxygen-containing layer.

Assignees

• Sk Hynix Inc

Inventors

• Park Sang-Su
• Lee Hyung-Dong

Classifications

• G06N3/08 Primary

  Learning methods · CPC title

• G06N3/065 Primary

  Analogue means · CPC title

• G06N3/063

  using electronic means · CPC title

• H01L27/24

  Electricity · mapped topic

• H10N70/231

  based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect · CPC title