Solid state photomultiplier with wide temperature range of operation

Patent metadata

Field	Value
Publication number	US-2017192112-A1
Application number	US-201514986001-A
Country	US
Kind code	A1
Filing date	Dec 31, 2015
Priority date	Dec 31, 2015
Publication date	Jul 6, 2017
Grant date	—

Abstract

A solid state photomultiplier includes at least one microcell configured to generate an initial analog signal when exposed to optical photons. The solid state photomultiplier further includes a quench circuit electrically coupled with the at least one microcell. The quench circuit includes at least one quench resistor configured to exhibit a substantially constant temperature coefficient of resistance over a selected temperature range.

First claim

What is claimed is:

1 . A solid state photomultiplier comprising:
at least one microcell configured to generate an initial analog signal when exposed to optical photons; and a quench circuit electrically coupled with said at least one microcell, said quench circuit comprising at least one quench resistor configured to exhibit a substantially constant resistance over a selected temperature range.

2 . The solid state photomultiplier of claim 1 , wherein said at least one quench resistor comprises at least one first resistor configured to exhibit a primary positive temperature coefficient of resistance and at least one second resistor configured to exhibit a primary negative temperature coefficient of resistance.

3 . The solid state photomultiplier of claim 2 , wherein said primary positive temperature coefficient of resistance and said primary negative temperature coefficient of resistance are selected such that said substantially constant resistance varies less than twenty percent from the sum of a first impedance value of said first resistor plus a second impedance value of said second resistor over the selected temperature range.

4 . The solid state photomultiplier of claim 2 , wherein said at least one first resistor comprises at least two positive sub-resistors, each positive sub-resistor of said at least two positive sub-resistors configured to exhibit an absolute value of a positive temperature coefficient of resistance different than an absolute value of said primary positive temperature coefficient of resistance.

5 . The solid state photomultiplier of claim 2 , wherein said at least one second resistor comprises at least two negative sub-resistors, each negative sub-resistor of said at least two negative sub-resistors configured to exhibit an absolute value of a negative temperature coefficient of resistance different than an absolute value of said primary negative temperature coefficient of resistance.

6 . The solid state photomultiplier of claim 2 , wherein said at least one first resistor comprises a silicide material.

7 . The solid state photomultiplier of claim 6 , wherein said silicide material is silicon carbide.

8 . The solid state photomultiplier of claim 2 , wherein said at least one second resistor comprises a polysilicon material.

9 . The solid state photomultiplier of claim 2 , wherein said at least one second resistor comprises an indium tin oxide material.

10 . The solid state photomultiplier of claim 1 , wherein the selected temperature range extends from and includes −60 degrees Celsius (° C.) to and includes 300° C.

11 . The solid state photomultiplier of claim 1 , wherein said solid state photomultiplier further comprises a wide bandgap material.

12 . The solid state photomultiplier of claim 1 , wherein said at least one microcell comprises at least one avalanche photodiode.

13 . A radiation detector module comprising:
a scintillator layer configured to generate photons in response to incident radiation; and a solid state photomultiplier comprising a plurality of microcells and a plurality of quench circuits, each said microcell of said plurality of microcells electrically coupled with a respective quench circuit of said plurality of quench circuits, each said microcell configured to generate a digital pulse signal in response to photons generated by said scintillator layer, and each said respective quench circuit comprises a quench resistor configured to exhibit a substantially constant resistance over a selected temperature range.

14 . The radiation detector module of claim 13 , wherein the solid state photomultiplier is configured to sum the respective digital pulse signals to generate a summed signal.

15 . The radiation detector module of claim 13 , wherein the digital pulse signal is generated in each said microcell in response to an initial analog signal exceeding a threshold voltage or current.

16 . The radiation detector module of claim 13 , wherein said plurality of microcells comprises a plurality of avalanche photodiodes.

17 . The radiation detector module of claim 13 , wherein said plurality of avalanche photodiodes comprises between about and including 100 microcells per square millimeter (mm) and about and including 2,500 microcells per square millimeter (mm).

18 . An imaging system for detecting radiation from a radiation source, the imaging system comprising:
a detector panel comprising a plurality of solid state photomultiplier modules, each solid state photomultiplier module of said plurality of solid state photomultiplier modules comprising a plurality of microcell circuits, each microcell circuit of said plurality of microcell circuits comprising a photodiode responsive to radiation from the radiation source and a quench circuit configured to exhibit a substantially constant resistance over a selected temperature range; a data acquisition system configured to acquire output signals from said detector panel, wherein the output signals are derived using digital pulses aggregated over respective solid state photomultiplier modules; an image reconstruction and processing system configured to generate images based on the output signals acquired by said data acquisition system; and at least one image display workstation configured to display the generated images from said image reconstruction and processing system.

19 . The imaging system of claim 18 , wherein said imaging system comprises one of a positron emission tomography (PET) imaging system, a single photon emission computed tomography (SPECT) imaging system, and an X-ray based imaging system.

20 . The imaging system of claim 18 , wherein the radiation source includes a material for an oil/gas drilling system.

Assignees

• Gen Electric

Inventors

• Sandvik Peter Micah
• Soloviev Stanislav Ivanovich
• Dolinsky Sergei Ivanovich
• Mcmahon James Jay
• Palit Sabarni

Classifications

• G01T1/248 Primary

  Silicon photomultipliers [SiPM], e.g. an avalanche photodiode [APD] array on a common Si substrate · CPC title

• G01T1/249

  specially adapted for use in SPECT or PET (SPECT imaging G01T1/1642; PET imaging G01T1/2985; detecting prohibited goods, e.g. weapons, explosives, hazardous substances, contraband or smuggled objects G01V5/20) · CPC title

• H01L31/115

  Electricity · mapped topic

• H10F77/959

  for devices working in avalanche mode · CPC title

• H10F39/1898

  Indirect radiation image sensors, e.g. using luminescent members · CPC title