Asymmetrical fin structure and method of fabricating the same
US-2018108656-A1 · Apr 19, 2018 · US
US2017191913A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017191913-A1 |
| Application number | US-201615142175-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 29, 2016 |
| Priority date | Jan 6, 2016 |
| Publication date | Jul 6, 2017 |
| Grant date | — |
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A device for isolating a microbe or a virion includes a semiconductor substrate; and a trench formed in the semiconductor substrate and extending from a surface of the semiconductor substrate to a region within the semiconductor substrate; wherein the trench has dimensions such that the microbe or the virion is trapped within the trench.
Opening claim text (preview).
What is claimed is: 1 . A device for isolating a microbe or a virion, comprising: a semiconductor substrate; and a trench formed in the semiconductor substrate and extending from a surface of the semiconductor substrate to a region within the semiconductor substrate; wherein the trench has dimensions such that the microbe or the virion is trapped within the trench. 2 . The device of claim 1 , wherein the trench has an average diameter in a range from about 70 to about 700 nanometers (nm). 3 . The device of claim 1 , further comprising an array of trenches. 4 . The device of claim 1 , wherein the device further comprises multiple arrays of trenches with different average diameters. 5 . The device of claim 1 , wherein the trench further comprises a material having an affinity for the microbe or the virion. 6 . The device of claim 1 , further comprising a solution comprising the microbe or the virion disposed on the semiconductor substrate, the microbe or the virion being trapped within the trench. 7 . The device of claim 6 , wherein the microbe or the virion is labeled with a fluorescent marker. 8 . The device of claim 6 , wherein the solution comprises different microbes or different virions. 9 . A device of claim 1 , wherein the surface of the semiconductor substrate is a roughened surface comprising agglomerates of a semiconductor material, and the trench is formed between the agglomerates.
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