Semiconductor devices, semiconductor structures and methods for fabricating a semiconductor structure
US-12176346-B2 · Dec 24, 2024 · US
US2017191876A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017191876-A1 |
| Application number | US-201514986429-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 31, 2015 |
| Priority date | Dec 31, 2015 |
| Publication date | Jul 6, 2017 |
| Grant date | — |
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Apparatus, systems, methods, and related computer program products for handling temperature variation with optoelectronic components of a hazard detection system are described herein. A power characteristic of an optoelectronic component of the hazard detection system may be used to determine a temperature of an environment of the hazard detection system. A power characteristic of an optoelectronic component of the hazard detection system may be used to determine a smoke condition of an environment of the hazard detection system. Optoelectronic components of the hazard detection system may be optically coupled to determine a smoke condition of an environment of the hazard detection system. Multiple optoelectronics of the hazard detection system may be operative to detect forward scatter and back scatter of one or more types of light to determine a characteristic of a hazard particle.
Opening claim text (preview).
What is claimed is: 1 . A hazard detection system comprising: a chamber body defining a chamber space within an enclosure space; a light emitting diode operative to emit light into the chamber space; a light detecting diode operative to detect the light emitted into the chamber space; and a processing subsystem operative to: determine a current particular smoke condition within the enclosure space based on the current amount of the light detected by the light detecting diode; determine a current value of a power characteristic of one of the light emitting diode and the light detecting diode; determine the current temperature of the one of the light emitting diode and the light detecting diode based on the determined current value of the power characteristic of the one of the light emitting diode and the light detecting diode; access thermal resistance data indicative of a thermal resistance between a portion of the enclosure space and the one of the light emitting diode and the light detecting diode; and determine the current temperature of the portion of the enclosure space based on: the accessed thermal resistance data; and the determined current temperature of the one of the light emitting diode and the light detecting diode. 2 . The hazard detection system of claim 1 , wherein the processing subsystem is operative to: determine a current value of a power characteristic of the other one of the light emitting diode and the light detecting diode; and determine the current temperature of the other one of the light emitting diode and the light detecting diode based on the determined current value of the power characteristic of the other one of the light emitting diode and the light detecting diode. 3 . The hazard detection system of claim 2 , wherein the processing subsystem is operative to determine the current temperature of the portion of the enclosure space based on: the accessed thermal resistance data; the determined current temperature of the one of the light emitting diode and the light detecting diode; and the determined current temperature of the other one of the light emitting diode and the light detecting diode. 4 . The hazard detection system of claim 2 , wherein the processing subsystem is operative to: access other thermal resistance data indicative of a thermal resistance between the portion of the enclosure space and the other one of the light emitting diode and the light detecting diode; and determine the current temperature of the portion of the enclosure space based on: the accessed thermal resistance data; the accessed other thermal resistance data; the determined current temperature of the one of the light emitting diode and the light detecting diode; and the determined current temperature of the other one of the light emitting diode and the light detecting diode. 5 . The hazard detection system of claim 1 , wherein the one of the light emitting diode and the light detecting diode is the light emitting diode. 6 . The hazard detection system of claim 5 , wherein the power characteristic is a forward voltage of the light emitting diode. 7 . The hazard detection system of claim 5 , wherein the power characteristic is a forward voltage of the light emitting diode when the light emitting diode is emitting the light into the chamber space. 8 . The hazard detection system of claim 1 , wherein the one of the light emitting diode and the light detecting diode is the light detecting diode. 9 . The hazard detection system of claim 8 , wherein the power characteristic is a current flowing through the light detecting diode. 10 . The hazard detection system of claim 8 , wherein the power characteristic is a current flowing through the light detecting diode when the light detecting diode is detecting the light emitted into the chamber space. 11 . The hazard detection system of claim 1 , wherein the portion of the enclosure space is a portion of the chamber space. 12 . The hazard detection system of claim 1 , wherein the portion of the enclosure space is external to the chamber space. 13 . The hazard detection system of claim 1 , wherein there is no dedicated temperature sensing component within the chamber space. 14 . The hazard detection system of claim 1 , wherein the processing subsystem is operative to determine the current particular smoke condition within the enclosure space based on: the current amount of the light detected by the light detecting diode; and the determined current temperature of the one of the light emitting diode and the light detecting diode. 15 . A method for operating a hazard detection system, wherein the hazard detection system comprises a chamber body defining a chamber space within an enclosure space, an optoelectronic emitter, an optoelectronic detector, and a processing subsystem, the method comprising: emitting light from the optoelectronic emitter into the chamber space; detecting at least a portion of the emitted light with the optoelectronic detector; determining, with the processing subsystem, a smoke condition within the enclosure space based on an amount of the emitted light detected by the optoelectronic detector; determining, with the processing subsystem, a value of a power characteristic of one of the optoelectronic emitter during the emitting and the optoelectronic detector during the detecting; determining, with the processing subsystem, the temperature of the one of the optoelectronic emitter and the optoelectronic detector based on the determined value of the power characteristic; accessing, with the processing subsystem, thermal resistance data indicative of a thermal resistance between a portion of the enclosure space and the one of the optoelectronic emitter and the optoelectronic detector; and determining, with the processing subsystem, the temperature of the portion of the enclosure space based on: the accessed thermal resistance data; and the determined temperature. 16 . The method of claim 15 , wherein the determining the temperature of the one of the optoelectronic emitter and the optoelectronic detector comprises: accessing, with the processing subsystem, correlator data indicative of: another value of the power characteristic of the one of the optoelectronic emitter and the optoelectronic detector at another temperature of the one of the optoelectronic emitter and the optoelectronic detector; and an approximation of a dependence between the temperature of the one of the optoelectronic emitter and the optoelectronic detector and the power characteristic of the one of the optoelectronic emitter and the optoelectronic detector; and estimating, with the processing subsystem, the temperature of the one of the optoelectronic emitter and the optoelectronic detector based on: the determined value of the power characteristic; and the accessed correlator data. 17 . The method of claim 15 , wherein the determining the temperature of the one of the optoelectronic emitter and the optoelectronic detector comprises: accessing, with the processing subsystem, correlator data indicative of: another value of the power characteristic of the one of the optoelectronic emitter and the optoelectronic detector at another temperature of the one of the optoelectronic emitter and the optoelectronic detector; and yet another value of the power characteristic of the one of the optoelectronic emitter and the optoelectronic detector at yet another temperature of the one of the optoelectronic emitter and the optoelectronic detector; and estimati
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