Crucible for growing crystals

Patent metadata

Field	Value
Publication number	US-2017191188-A1
Application number	US-201515323246-A
Country	US
Kind code	A1
Filing date	Jul 1, 2015
Priority date	Jul 2, 2014
Publication date	Jul 6, 2017
Grant date	—

Abstract

Crucible for growing single crystals, formed from W, Mo, Re, an alloy or a base alloy of these metals, and a process for producing a crucible ( 2 ), wherein at least part of an outwardly facing outer face ( 4 ) of the crucible ( 2 ) has, at least in certain regions, a profile with a mean profile depth (a) of between 5 and 500 μm.

First claim

1 . Crucible for growing crystals, in particular for growing single crystals, formed from W, Mo, Re, an alloy or a base alloy of these metals,
wherein an outer face of the crucible has, at least in certain regions, a profile with a mean profile depth between 5 and 500 μm.

2 . Crucible according to claim 1 , wherein the profile has a mean profile depth (a) of between 10 and 300 μm.

3 . Crucible according to claim 1 , wherein the profile has a recess or a multiplicity of recesses, which are arranged spaced uniformly apart at least in certain regions over the outer face of the crucible.

4 . Crucible according to claim 1 , wherein the profile is in the form of a recess circulating around the crucible ( 2 ), in particular a score or groove, or a multiplicity of recesses circulating around the crucible ( 2 ).

5 . Crucible according to claim 1 , wherein the profile has a recess or a multiplicity of recesses with a part-circular, trapezoidal, wedge-shaped, conical and/or rectangular cross section.

6 . Crucible according to claim 1 , wherein the profile, at least in certain regions, has a recess or a multiplicity of recesses with a part-circular cross section with a radius of between 0.2 and 10 mm.

7 . Crucible according to claim 1 , wherein the profile has a recess or a multiplicity of recesses with, at least in certain regions, a part-circular cross section with a radius of between 0.8 and 6 mm.

8 . Crucible according to claim 1 , wherein the profile has a multiplicity of recesses and the mean spacing between adjacent recesses in the axial direction of the crucible is, at least in certain regions, between 0.2 and 10 mm.

9 . Crucible according to claim 1 , wherein the profile has a multiplicity of recesses and the spacing between adjacent recesses in the axial direction of the crucible is, at least in certain regions, between 0.8 and 6 mm.

10 . Crucible according to claim 1 , wherein the outer faces of the crucible which are exposed during the production of a single crystal have the profile, in particular the side walls of the crucible.

11 . Crucible according to claim 1 , wherein an inner face of the crucible facing toward an internal volume has, at least in certain regions, a mean roughness value Ra of between 0.1 and 1.6 μm, in particular is ground axially and/or polished axially.

12 . Process for producing a crucible for growing crystals, in particular a crucible according to claim 1 , said process comprising the following steps:
providing a pressed main crucible body, a pressed and sintered main crucible body, a pressed, sintered and deformed main crucible body or a main crucible body produced by way of a coating process, including machining or coating an outer face of the main crucible body, such that at least part of the outer face has a profile with, at least in certain regions, a mean profile depth of between 5 and 500 μm.

13 . Process according to claim 12 , further comprising the following step: machining an inner face of the crucible facing toward an internal volume, such that the inner face has, at least in certain regions, a mean roughness value Ra of between 0.1 and 1.6 μm.

Assignees

• Plansee (Shanghai) High Performance Mat Ltd
• Plansee Se

Inventors

• Hochstrasser Mathias
• Cheng David
• Larcher Heike
• Kleinpass Bernd
• Webhofer Martin
• Eberle Wolfgang
• Hammerle Walter

Classifications

• C30B35/002 Primary

  Crucibles or containers · CPC title

• C30B35/007

  Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title

• C30B11/002

  Crucibles or containers for supporting the melt · CPC title

• C30B15/10

  Crucibles or containers for supporting the melt · CPC title

• C30B15/14

  Heating of the melt or the crystallised materials · CPC title