Sintered body production method
US-2024307956-A1 · Sep 19, 2024 · US
US2017175453A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017175453-A1 |
| Application number | US-201615379883-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 15, 2016 |
| Priority date | Dec 16, 2015 |
| Publication date | Jun 22, 2017 |
| Grant date | — |
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Polycrystalline diamond cutters for rotary drill bits and methods of making the same are disclosed. A polycrystalline diamond compact includes a polycrystalline diamond body having a working surface, an interface surface, and a perimeter surface. The polycrystalline diamond compact also includes a substrate bonded to the polycrystalline diamond body along the interface surface. A non-diamond volume fraction of the polycrystalline diamond body is greater at the interface surface than at the working surface.
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What is claimed is: 1 . A polycrystalline diamond compact, comprising: a polycrystalline diamond body comprising a working surface, an interface surface, and a perimeter surface; a substrate bonded to the polycrystalline diamond body along the interface surface, wherein a non-diamond volume fraction of the polycrystalline diamond body is greater at the interface surface than at the working surface. 2 . The polycrystalline diamond compact of claim 1 , wherein the polycrystalline diamond body exhibits a concentration of non-catalytic material that is lower at the working surface than at the interface surface. 3 . The polycrystalline diamond compact of claim 2 , wherein the substrate is free of the non-catalytic material. 4 . The polycrystalline diamond compact of claim 2 , wherein the non-catalytic material is selected from the group consisting of bismuth, indium, lead, lithium, magnesium, tellurium, thallium and alloys, nitrides, carbides and carbonitrides thereof. 5 . The polycrystalline diamond compact of claim 1 , wherein the polycrystalline diamond body comprises a uniform particle size distribution of inter-bonded diamond particles. 6 . The polycrystalline diamond compact of claim 1 , wherein the polycrystalline diamond body comprises voids between inter-bonded diamond grains, wherein the voids have larger volumes at the interface surface than at the working surface. 7 . The polycrystalline diamond compact of claim 1 , wherein the polycrystalline diamond body comprises voids between inter-bonded diamond grains, wherein the interface surface exhibits a greater quantity of voids than the working surface. 8 . A polycrystalline diamond compact, comprising: a polycrystalline diamond body comprising a working surface, an interface surface, and a perimeter surface; a substrate bonded to the polycrystalline diamond body along the interface surface, wherein the polycrystalline diamond body exhibits a concentration of non-catalytic material that is lower at the working surface than at the interface surface. 9 . The polycrystalline diamond compact of claim 8 , wherein the substrate is free of the non-catalytic material. 10 . The polycrystalline diamond compact of claim 8 , wherein the non-catalytic material is selected from the group consisting of bismuth, indium, lead, lithium, magnesium, tellurium, thallium and alloys, nitrides, carbides and carbonitrides thereof. 11 . The polycrystalline diamond compact of claim 8 , wherein the polycrystalline diamond body comprises a uniform particle size distribution of inter-bonded diamond particles. 12 . The polycrystalline diamond compact of claim 8 , wherein the polycrystalline diamond body and the substrate each comprise a catalytic material, wherein the non-catalytic material has less than about 3 at. % solubility in the catalyst material. 13 . The polycrystalline diamond compact of claim 8 , wherein catalytic material from the substrate bonds the polycrystalline diamond body to the substrate. 14 . A method of producing a polycrystalline diamond compact, comprising: assembling a formation cell assembly comprising: diamond particles positioned within a cup; a first substrate comprising a catalytic material, the first substrate positioned proximate to the diamond particles; and pressure transferring medium surrounding the cup and the first substrate; subjecting the formation cell assembly and its contents to a first high pressure high temperature process to sinter the diamond particles in inter-diamond bonds and to form a polycrystalline diamond composite comprising a polycrystalline diamond body that is bonded to the first substrate, wherein the polycrystalline diamond composite comprises an intermediate-step interface surface positioned proximate to the first substrate and an intermediate-step working surface positioned distally from the first substrate; removing substantially all of the first support substrate from the polycrystalline diamond body; leaching at least a portion of accessible catalytic material from the polycrystalline diamond body; positioning the polycrystalline diamond body such that the intermediate-step working surface is positioned proximate to a second substrate; and subjecting the polycrystalline diamond body and the second substrate to a second high pressure high temperature process to bond the polycrystalline diamond body to the second substrate along an interface surface. 15 . The method of claim 14 , wherein the polycrystalline diamond body is inverted with respect to the second substrate as compared to the first substrate. 16 . The method of claim 14 , wherein a non-diamond volume fraction of the polycrystalline diamond body is greater at the interface surface than at the working surface. 17 . The method of claim 14 , wherein the polycrystalline diamond body comprises voids between inter-bonded diamond grains, wherein the voids have larger volumes at the interface surface than at the working surface. 18 . The method of claim 14 , wherein the polycrystalline diamond body comprises voids between inter-bonded diamond grains, wherein the interface surface exhibits a greater quantity of voids than the working surface. 19 . The method of claim 14 , further comprising the combining diamond particles with a non-catalytic material to distribute the non-catalytic material with the diamond particles. 20 . The method of claim 19 , wherein the polycrystalline diamond body exhibits a concentration of non-catalytic material that is lower at the working surface than at the interface surface. 21 . The method of claim 19 , wherein the second substrate is free of the non-catalytic material. 22 . The method of claim 19 , wherein the non-catalytic material is selected from the group consisting of bismuth, indium, lead, lithium, magnesium, tellurium, thallium and alloys, nitrides, carbides and carbonitrides thereof.
simultaneously · CPC title
Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride · CPC title
Alkaline earth metals · CPC title
Interface between the substrate and the cutting element · CPC title
Carbonitrides, e.g. titanium carbonitride, zirconium carbonitride · CPC title
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