Structures and fabrication methods of flexible thermoelectric devices

US2017170381A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2017170381-A1
Application numberUS-201615282997-A
CountryUS
Kind codeA1
Filing dateSep 30, 2016
Priority dateApr 14, 2014
Publication dateJun 15, 2017
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A thermoelectric device is provided that includes a first flexible copper substrate having a carbon layer disposed on a polycrystalline flexible copper foil, a first nanowire structure disposed on the carbon layer, where the first nanowire structure includes a first lateral film layer disposed on the distal ends of the first nanowire structure, where the first lateral film layer connects the first nanowire structure distal ends, a second nanowire structure disposed on the first lateral film layer, where the second nanowire structure includes a second lateral film layer disposed on distal ends of the second nanowire structure, where the second lateral film layer connects the second nanowire structure distal ends, and a second flexible copper substrate disposed on the second lateral film layer.

First claim

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1 ) A thermoelectric device, comprising: a) a first flexible copper substrate, wherein said flexible copper substrate comprises a carbon layer disposed on a polycrystalline flexible copper foil; b) a first nanowire structure disposed on said carbon layer, wherein said first nanowire structure comprises a first lateral film layer disposed on the distal ends of said first nanowire structure, wherein said first lateral film layer connects said first nanowire structure distal ends; c) a second nanowire structure disposed on said first lateral film layer, wherein said second nanowire structure comprises a second lateral film layer disposed on distal ends of said second nanowire structure, wherein said second lateral film layer connects said second nanowire structure distal ends; and d) a second flexible copper substrate disposed on said second lateral film layer. 2 ) The thermoelectric device of claim 1 , wherein said polycrystalline copper foil comprises a graphene layer disposed on a flexible copper foil. 3 ) The thermoelectric device of claim 1 , wherein said first nanowire structure comprises silicon nanowires. 4 ) The thermoelectric device of claim 3 , wherein said silicon nanowires comprise a core-shell structure, where said core structure comprises a crystalline-core structure, wherein said shell structure comprises a polycrystalline-shell structure. 5 ) The thermoelectric device of claim 1 , wherein said first lateral film layer comprises a silicon layer. 6 ) The thermoelectric device of claim 1 , wherein said second nanowire structure comprises indium phosphide nanowires. 7 ) The thermoelectric device of claim 1 , wherein said second lateral film layer comprises a silicon layer. 8 ) The thermoelectric device of claim 1 , where the first nanowire structure includes Group III-V, Group IV, or Group V-VI nanowires. 9 ) A thermoelectric device, comprising: a) a flexible copper substrate, wherein said flexible copper substrate comprises a graphene layer disposed on a polycrystalline copper foil; b) a nanowire structure disposed on said graphene layer, wherein said nanowire structure comprises a lateral film layer disposed on the distal ends of said nanowire structure, wherein said lateral film layer connects said nanowire structure ends; and c) a second flexible copper substrate disposed on said lateral film layer. 10 ) The thermoelectric device of claim 9 , wherein said nanowire structure comprises silicon nanowires. 11 ) The thermoelectric device of claim 10 , wherein said silicon nanowires comprises a core structure surrounded by a shell structure, where said core structure comprises a crystalline-core structure, wherein said shell structure comprises a polycrystalline-shell structure. 12 ) The thermoelectric device of claim 9 , wherein said first lateral film layer comprises a silicon layer. 13 ) The thermoelectric device of claim 9 , wherein said nanowire structure comprises Group III-V, Group IV, or Group V-VI nanowires.

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What does patent US2017170381A1 cover?
A thermoelectric device is provided that includes a first flexible copper substrate having a carbon layer disposed on a polycrystalline flexible copper foil, a first nanowire structure disposed on the carbon layer, where the first nanowire structure includes a first lateral film layer disposed on the distal ends of the first nanowire structure, where the first lateral film layer connects the fi…
Who is the assignee on this patent?
Univ California
What technology area does this patent fall under?
Primary CPC classification H01L35/32. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Jun 15 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).