Silicon-containing resist underlayer film-forming composition having organic group having aliphatic polycyclic structure

Patent metadata

Field	Value
Publication number	US-2017153549-A1
Application number	US-201515325685-A
Country	US
Kind code	A1
Filing date	Jul 10, 2015
Priority date	Jul 15, 2014
Publication date	Jun 1, 2017
Grant date	—

Abstract

A resist underlayer film-forming composition for lithography having an aliphatic polycyclic structure including, as a silane, a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a combination thereof, in which the aliphatic polycyclic structure is a structure which a hydrolyzable silane of Formula (1):
R 1 a R 2 b Si(R 3 ) 4−(a+b)   Formula (1)

(where R 1 is an organic group having an aliphatic polycyclic structure and bonded to a Si atom through a Si—C bond; R 3 is an ethoxy group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3) has, or a structure included in a compound added as an aliphatic polycyclic compound, an aliphatic polycyclic dicarboxylic acid, or an aliphatic polycyclic dicarboxylic acid anhydride, each optionally having a double bond, a hydroxy group, or an epoxy group.

First claim

1 . A resist underlayer film-forming composition for lithography having an aliphatic polycyclic structure, the composition comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a combination thereof, in which the aliphatic polycyclic structure is a structure which a hydrolyzable silane of Formula (1):
R 1 a R 2 b Si(R 3 ) 4−(a+b)   Formula (1)

(where R 1 is an organic group having an aliphatic polycyclic structure and bonded to a Si atom through a Si—C bond; R 2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, and is bonded to a silicon atom through a Si—C bond; R 3 is an ethoxy group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3) has, or a structure included in a compound added as an aliphatic polycyclic compound, an aliphatic polycyclic dicarboxylic acid, or an aliphatic polycyclic dicarboxylic acid anhydride, each optionally having a double bond, a hydroxy group, or an epoxy group.

2 . The resist underlayer film-forming composition according to claim 1 , wherein R 1 in Formula (1) is an optionally substituted norbornene, an optionally substituted norbornane, a cyclic aliphatic group containing a heteroatom, or an organic group including an arbitrary combination thereof.

3 . The resist underlayer film-forming composition according to claim 2 , wherein a substituent of R 1 in Formula (1) is a carboxy group, a carboxylic acid anhydride group, a carboxylic acid ester group, a hydroxy group, an alkoxy group, or an oxygen atom.

4 . The resist underlayer film-forming composition according to claim 1 , wherein the hydrolyzable silane is a combination of the hydrolyzable silane of Formula (1) and another hydrolyzable silane, the other hydrolyzable silane being at least one hydrolyzable silane selected from the group consisting of a hydrolyzable silane of Formula (2):
R 4 c Si(R 5 ) 4−c   Formula (2)

(where R 4 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, or a cyano group, and is bonded to a silicon atom through a Si—C bond; R 5 is an alkoxy group, an acyloxy group, or a halogen group; and c is an integer of 0 to 3) and a hydrolyzable silane of Formula (3):
[R 6 d Si(R 7 ) 3−d ] 2 Y e   Formula (3)

(where R 6 is an alkyl group and bonded to a silicon atom through a Si—C bond; R 7 is an alkoxy group, an acyloxy group, or a halogen group; Y is an alkylene group or an arylene group; d is an integer of 0 or 1; and e is an integer of 0 or 1).

5 . A resist underlayer film-forming composition comprising, as a polymer, a hydrolysis-condensation product of a hydrolyzable silane formed of a combination of the hydrolyzable silane of Formula (1):
R 1 a R 2 b Si(R 3 ) 4−(a+b)   Formula (1)

(where R 1 is an organic group having an aliphatic polycyclic structure and bonded to a Si atom through a Si—C bond; R 2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group, and is bonded to a silicon atom through a Si—C bond; R 3 is an ethoxy group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3), and the hydrolyzable silane of Formula (2):
R 4 c Si(R 5 ) 4−c   Formula (2)

(where R 4 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, or a cyano group, and is bonded to a silicon atom through a Si—C bond; R 5 is an alkoxy group, an acyloxy group, or a halogen group; and c is an integer of 0 to 3).

6 . The resist underlayer film-forming composition according to claim 1 , further comprising an acid as a hydrolysis catalyst.

7 . The resist underlayer film-forming composition according to claim 1 , further comprising water.

8 . A resist underlayer film obtained by applying the resist underlayer film-forming composition as claimed in claim 1 onto a semiconductor substrate and baking the applied resist underlayer film-forming composition.

9 . A method for manufacturing a semiconductor device, the method comprising the steps of:
applying the resist underlayer film-forming composition as claimed in claim 1 onto a semiconductor substrate, and baking to form a resist underlayer film; applying a resist composition onto the underlayer film to form a resist film; exposing the resist film to light; developing the resist film after the exposure to obtain a resist pattern; etching the resist underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned resist and the patterned resist underlayer film.

10 . A method for manufacturing a semiconductor device, the method comprising the steps of:
forming an organic underlayer film on a semiconductor substrate; applying the resist underlayer film-forming composition as claimed in claim 1 onto the organic underlayer film, and baking the composition to form a resist underlayer film; applying a resist composition onto the resist underlayer film to form a resist film; exposing the resist film to light; developing the resist film after the exposure to obtain a resist pattern; etching the resist underlayer film using the resist pattern; etching the organic underlayer film using the patterned resist underlayer film; and processing the semiconductor substrate using the patterned organic underlayer film.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Shibayama Wataru
• Shigaki Shuhei
• Nakajima Makoto
• Takeda Satoshi
• Wakayama Hiroyuki
• Sakamoto Rikimaru

Classifications

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• C08G77/28

  sulfur-containing groups · CPC title

• G03F7/0752

  in non photosensitive layers or as additives, e.g. for dry lithography · CPC title

• C09D183/04

  Polysiloxanes · CPC title