Resist material, resist composition and method for forming resist pattern

Patent metadata

Field	Value
Publication number	US-2017145142-A1
Application number	US-201515309780-A
Country	US
Kind code	A1
Filing date	May 8, 2015
Priority date	May 8, 2014
Publication date	May 25, 2017
Grant date	—

Abstract

The resist material according to the present invention contains a compound represented by the following formula (1):

wherein each R 0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

First claim

1 . A resist material comprising a compound represented by the following formula (1):

wherein each R 0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

2 . The resist material according to claim 1 , wherein at least one of p is an integer of 1 to 4.

3 . The resist material according to claim 1 , wherein at least one of R 0 is the monovalent group having the oxygen atom.

4 . The resist material according to claim 1 , wherein the compound represented by the formula (1) is a compound represented by the following formula (2):

wherein each m is independently an integer of 0 to 4, wherein at least one of m is an integer of 1 to 4.

5 . The resist material according to claim 4 , wherein the compound represented by the formula (2) is at least one kind selected from a compound group represented by the following formulas (2-1) to (2-6):

6 . The resist material according to claim 1 , wherein the compound represented by the formula (1) is a compound represented by the following formula (3):

wherein each R is independently a hydrogen atom or an acid dissociation reactive group, wherein at least one of R is an acid dissociation reactive group; and each n is independently an integer of 0 to 4, wherein at least one of n is an integer of 1 to 4.

7 . The resist material according to claim 6 , wherein the compound represented by the formula (3) is at least one kind selected from a compound group represented by the following formulas (3-1) to (3-6):

wherein R is as defined in the formula (3).

8 . The resist material according to claim 6 , wherein the acid dissociation reactive group is a group selected from the group consisting of a substituted methyl group, a 1-substituted ethyl group, a 1-substituted n-propyl group, a 1-branched alkyl group, a silyl group, an acyl group, a 1-substituted alkoxymethyl group, a cyclic ether group, an alkoxycarbonyl group, and an alkoxycarbonylalkyl group.

9 . The resist material according to claim 6 , wherein the acid dissociation reactive group is a group selected from the group consisting of groups represented by the following formula (13-4):

wherein R 5 is a hydrogen atom, or a linear or branched alkyl group having 1 to 4 carbon atoms; R 6 is a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, a cyano group, a nitro group, a heterocyclic group, a halogen atom, or a carboxyl group; n 1 is an integer of 0 to 4; n 2 is an integer of 1 to 5; and n 0 is an integer of 0 to 4.

10 . A resist material comprising a resin obtained through a reaction of at least a compound represented by the following formula (1) with a compound having crosslinking reactivity:

wherein each RD is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

11 . The resist material according to claim 10 , wherein the compound having crosslinking reactivity is an aldehyde, a ketone, a carboxylic acid, a carboxylic acid halide, a halogen-containing compound, an amino compound, an imino compound, an isocyanate, or an unsaturated hydrocarbon group-containing compound.

12 . The resist material according to claim 10 , wherein the resin is at least one kind selected from the group consisting of a novolac-based resin, an aralkyl-based resin, a hydroxystyrene-based resin, a (meth)acrylic acid-based resin, and a copolymer thereof.

13 . The resist material according to claim 10 , wherein the resin has at least one structure selected from the group consisting of structures represented by the following formulas (4-1) to (4-16):

wherein R 0 and p are as defined in the formula (1).

14 . A resist composition comprising the resist material according to claim 1 and a solvent.

15 . The resist composition according to claim 14 , further comprising an acid generating agent.

16 . The resist composition according to claim 14 , further comprising an acid crosslinking agent.

17 . A method for forming a resist pattern, comprising the steps of:
coating a substrate with the resist composition according to claim 14 , thereby forming a resist film; exposing the resist film; and developing the exposed resist film.

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• Toida Takumi
• Sato Takashi
• Echigo Masatoshi

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F7/004 Primary

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

• G03F7/039

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

• G03F7/30

  Imagewise removal using liquid means · CPC title

• G03F7/38

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title