Polymer on graphene

Patent metadata

Field	Value
Publication number	US-2017141202-A1
Application number	US-201715419719-A
Country	US
Kind code	A1
Filing date	Jan 30, 2017
Priority date	Nov 25, 2013
Publication date	May 18, 2017
Grant date	—

Abstract

A top-gated graphene field effect transistor can be fabricated by forming a layer of graphene on a substrate, and applying an electrochemical deposition process to deposit a layer of dielectric polymer on the graphene layer. An electric potential between the graphene layer and a reference electrode is cycled between a lower potential and a higher potential. A top gate is formed above the polymer.

First claim

What is claimed is:

1 . A graphene transistor comprising:
a substrate; a layer of graphene on the substrate; a layer of dielectric polymer comprising poly(phenylene oxide) on the graphene layer; and a top gate above the polymer.

2 . The transistor of claim 1 in which the graphene layer is patterned to form a channel, and the transistor further comprises drain and source electrodes that are electrically coupled to the graphene.

3 . The transistor of claim 1 , comprising a layer of second dielectric material on the dielectric polymer layer, the second dielectric material having a dielectric constant that is higher than the dielectric constant of the polymer.

4 . The transistor of claim 1 in which the dielectric polymer layer has a thickness that is less than 10 nm.

5 . An apparatus comprising:
a substrate; a layer of two-dimensional material on the substrate; and a layer of polymer on the graphene, the polymer comprising poly(phenylene oxide).

6 . The apparatus of claim 5 in which the two-dimensional material comprises graphene.

7 . The apparatus of claim 6 comprising a drain electrode, a source electrode, and a top gate, in which the layer of graphene is disposed between the drain and source electrodes and is configured to function as a channel, and the top gate is disposed above the layer of polymer.

8 . The apparatus of claim 7 , comprising a dielectric layer disposed between the polymer layer and the top gate.

9 . The apparatus of claim 8 in which the dielectric layer comprises a dielectric that has a dielectric constant that is higher than the dielectric constant of the polymer.

10 . The apparatus of claim 6 in which the layer of graphene comprises a monolayer of graphene.

11 . The apparatus of claim 5 in which the polymer layer has a thickness in a range between 500 nm to 1 μm.

12 . The apparatus of claim 5 in which the polymer layer has a thickness in a range from 100 nm to 500 nm.

13 . The apparatus of claim 5 in which the polymer layer has a thickness in a range from 10 nm to 100 nm.

14 . The apparatus of claim 5 in which the polymer layer has a thickness less than 10 nm.

15 . The apparatus of claim 5 in which the two-dimensional material comprises phosphorene.

16 . The apparatus of claim 15 in which the polymer layer covers the phosphorene to prevent oxidation of the phosphorene.

17 . An apparatus comprising:
a substrate; a layer of two-dimensional material on the substrate, in which the two-dimensional material is at least one of a conducting or a semiconducting material; and a dielectric polymer formed on the layer of two-dimensional material by applying an electrochemical deposition process to deposit the dielectric polymer on the two-dimensional material, in which a rate of deposition of the dielectric polymer at a given location of the two-dimensional material decreases as a thickness of the dielectric polymer layer increases.

18 . The apparatus of claim 17 in which the dielectric polymer comprises poly(phenylene oxide).

Assignees

• Nutech Ventures

Inventors

• Redepenning Jody G
• Sinitskii Alexander
• Wymore Benjamin

Classifications

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/2923

  being conductive materials, e.g. metallic silicides · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title