Package architecture utilizing wafer to wafer bonding
US-2024379487-A1 · Nov 14, 2024 · US
US2017141010A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017141010-A1 |
| Application number | US-201515309610-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 25, 2015 |
| Priority date | Jun 30, 2014 |
| Publication date | May 18, 2017 |
| Grant date | — |
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A method for producing a ceramic-aluminum bonded body obtained by bonding a ceramic member and an aluminum member, the aluminum member before bonding being composed of aluminum having a purity of 99.0 mass % or higher and 99.9 mass % or lower, includes a heat treatment step of subjecting the aluminum member to a heat treatment in a range of 400° C. or higher and lower than a solidus temperature, and a bonding step of bonding the aluminum member after the heat treatment step and the ceramic member via a brazing filler material including Si.
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1 . A method for producing a ceramic-aluminum bonded body obtained by bonding a ceramic member and an aluminum member, the aluminum member before bonding being composed of aluminum having a purity of 99.0 mass % or higher and 99.9 mass % or lower, the method comprising: a heat treatment step of subjecting the aluminum member to a heat treatment in a range of 400° C. or higher and lower than a solidus temperature; and a bonding step of bonding the aluminum member after the heat treatment step and the ceramic member via a brazing filler material including Si. 2 . A method for producing a power module substrate which includes a ceramic substrate and an aluminum plate that is bonded to the ceramic substrate, the aluminum plate before bonding being composed of aluminum having a purity of 99.0 mass % or higher and 99.9 mass % or lower, the method comprising: bonding the aluminum plate and the ceramic substrate by the method for producing a ceramic-aluminum bonded body according to claim 1 . 3 . A ceramic-aluminum bonded body obtained by bonding a ceramic member and an aluminum member, wherein the aluminum member before bonding is composed of aluminum having a purity of 99.0 mass % or higher and 99.9 mass % or lower, and a grain boundary length L, which is observed in a section of the aluminum member after bonding in a thickness direction, per mm 2 is 0.1 mm or less. 4 . A power module substrate, comprising: a ceramic substrate; and an aluminum plate that is bonded to the ceramic substrate, wherein the aluminum plate before bonding is composed of aluminum having a purity of 99.0 mass % or higher and 99.9 mass % or lower, and a grain boundary length L, which is observed in a section of the aluminum plate after bonding in a thickness direction, per mm 2 is 0.1 mm or less. 5 . The power module substrate according to claim 4 , wherein the thickness of the aluminum plate is in a range of 0.05 mm or more and less than 0.4 mm.
with metallic articles · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
Cleaning · CPC title
Shapes or dispositions thereof · CPC title
Assembling together parts thereof · CPC title
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