Three-terminal synapse device and method of operating the same
US-9224946-B2 · Dec 29, 2015 · US
Conductive-Bridging Random Access Memory
US2017133584A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017133584-A1 |
| Application number | US-201615084149-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 29, 2016 |
| Priority date | Nov 5, 2015 |
| Publication date | May 11, 2017 |
| Grant date | — |
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Abstract
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A conductive-bridging random access memory is provided. The conductive-bridging random access memory includes a bottom electrode layer on a semiconductor substrate, an electrical resistance switching layer on the bottom electrode layer, a barrier layer on the electrical resistance switching layer, a top electrode layer on the barrier layer, and a high thermal-conductive material layer between the bottom electrode layer and the barrier layer. The high thermal-conductive material layer has a thermal conductivity in a range of 70-5000 W/mK.
First claim
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What is claimed is: 1 . A conductive-bridging random access memory, comprising: a semiconductor substrate; a bottom electrode layer formed on the semiconductor substrate; an electrical resistance switching layer formed on the bottom electrode layer; a barrier layer formed on the electrical resistance switching layer; a top electrode layer formed on the barrier layer; and a high thermal-conductive material layer formed between the bottom electrode layer and the barrier layer, wherein the high thermal-conductive material layer has a thermal conductivity in a range of 70-5000 W/mK. 2 . The conductive-bridging random access memory as claimed in claim 1 , wherein the high thermal-conductive material layer is formed between the bottom electrode layer and the electrical resistance switching layer. 3 . The conductive-bridging random access memory as claimed in claim 1 , wherein the high thermal-conductive material layer is formed between the electrical resistance switching layer and the barrier layer. 4 . The conductive-bridging random access memory as claimed in claim 1 , wherein the high thermal-conductive material layer comprises nitride, oxide, carbide, metal, alloy, or combinations thereof. 5 . The conductive-bridging random access memory as claimed in claim 4 , wherein the high thermal-conductive material layer comprises aluminium nitride, beryllium oxide, gold, platinum, nickel, tungsten, iron, zinc, graphite, carbon nanotubes or combinations thereof. 6 . The conductive-bridging random access memory as claimed in claim 1 , wherein the high thermal-conductive material layer has a thickness in a range of 1-1000 nm. 7 . The conductive-bridging random access memory as claimed in claim 1 , wherein a thermal conductivity of the electrical resistance switching layer is lower than that of the high thermal-conductive material layer by 50 W/mK. 8 . The conductive-bridging random access memory as claimed in claim 1 , wherein the high thermal-conductive material layer has an electrical conductivity in a range of 9×10 6 −1×10 8 S/m. 9 . The conductive-bridging random access memory as claimed in claim 1 , wherein the high thermal-conductive material layer has an electrical conductivity in a range of 5×10 −15 −5×10 −14 S/m. 10 . The conductive-bridging random access memory as claimed in claim 1 , wherein a difference between a coefficient of linear thermal expansion of the high thermal-conductive material layer and a coefficient of linear thermal expansion of the electrical resistance switching layer is equal to or lower than 50×10 −6 1/K.
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
- H01L45/085Primary
Electricity · mapped topic
- H10N70/245Primary
the species being metal cations, e.g. programmable metallization cells · CPC title
Thermal details · CPC title
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Frequently asked questions
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- What does patent US2017133584A1 cover?
- A conductive-bridging random access memory is provided. The conductive-bridging random access memory includes a bottom electrode layer on a semiconductor substrate, an electrical resistance switching layer on the bottom electrode layer, a barrier layer on the electrical resistance switching layer, a top electrode layer on the barrier layer, and a high thermal-conductive material layer between t…
- Who is the assignee on this patent?
- Winbond Electronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L45/085. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu May 11 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).