Conductivity based on selective etch for GaN devices and applications thereof
US-9206524-B2 · Dec 8, 2015 · US
US2017130343A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017130343-A1 |
| Application number | US-201715414395-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 24, 2017 |
| Priority date | Dec 1, 2014 |
| Publication date | May 11, 2017 |
| Grant date | — |
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A method of manufacturing a photoelectrode of an embodiment includes: preparing a stack including a first electrode layer having a light transmitting electrode, a second electrode layer having a metal electrode, and a photovoltaic layer disposed between the electrode layers; immersing the stack in an electrolytic solution containing an ion including a metal constituting a catalyst layer which is to be formed on the first electrode layer; and passing a current to the stack through the second electrode layer to electrochemically precipitate at least one selected from the metal and a compound containing the metal, onto the first electrode layer, thereby forming the catalyst layer.
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What is claimed is: 1 . A method for manufacturing a photoelectrode comprising: preparing a stack including a first electrode layer having a light transmitting electrode, a second electrode layer having a metal electrode, and a photovoltaic layer disposed between the first electrode layer and the second electrode layer; immersing the stack in an electrolytic solution containing an ion including a metal constituting at least part of a catalyst layer which is to be formed on the first electrode layer; and passing a current to the stack immersed in the electrolytic solution through the second electrode layer to electrochemically precipitate at least one selected from the group consisting of the metal and a compound containing the metal, onto the first electrode layer. 2 . The method of claim 1 , wherein the electrolytic solution contains: at least one cation selected from the group consisting of an ion of the metal, an oxide ion of the metal, and a complex ion of the metal; and at least one anion selected from the group consisting of an inorganic acid ion and a hydroxide ion, and wherein a counter electrode is immersed in the electrolytic solution to face the stack immersed in the electrolytic solution, and at least one selected from the group consisting of the metal, a hydroxide of the metal, and an oxide of the metal is precipitated onto the first electrode layer by passing the current between the counter electrode and the stack. 3 . The method of claim 1 , wherein the first electrode layer contains a transparent conductive oxide, and the second electrode layer is formed of at least one metal selected from the group consisting of copper, aluminum, titanium, nickel, iron, and silver, or an alloy containing the at least one metal. 4 . The method of claim 3 , wherein the transparent conductive oxide includes at least one selected from the group consisting of indium tin oxide, zinc oxide, aluminum-doped zinc oxide, tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, indium zinc oxide, and indium gallium zinc oxide. 5 . The method of claim 1 , wherein the first electrode layer is an oxidation electrode which oxidizes water, and the second electrode layer is a reduction electrode which reduces at least one selected from the group consisting of carbon dioxide and water, and wherein the catalyst layer contains a metal oxide including at least one selected from the group consisting of manganese, iridium, nickel, cobalt, iron, tin, indium, ruthenium, lanthanum, strontium, lead, and titanium, as the metal. 6 . The method of claim 5 , wherein the electrolytic solution contains: at least one cation selected from the group consisting of an ion of the metal, an oxide ion of the metal, and a complex ion of the metal; and an anion being an inorganic acid ion, and wherein a counter electrode is immersed in the electrolytic solution to face the stack immersed in the electrolytic solution, and at least one selected from the group consisting of a hydroxide of the metal and an oxide of the metal is precipitated onto the first electrode layer by passing the current between the counter electrode and the stack whose polarity is negative from a power source. 7 . The method of claim 6 , wherein a hydroxide ion is generated through reduction of the inorganic acid ion by the current passed between the counter electrode and the stack, wherein the hydroxide of the metal is precipitated onto the first electrode layer from the cation and the hydroxide ion, and wherein the oxide of the metal is generated as the catalyst layer by heat treating the hydroxide of the metal precipitated onto the first electrode layer. 8 . The method of claim 6 , wherein the inorganic acid ion is at least one selected from the group consisting of a nitric acid ion, a sulfuric acid ion, a chloride ion, a phosphoric acid ion, a boric acid ion, a hydrogen carbonate ion, and a carbonate ion. 9 . The method of claim 5 , wherein the photovoltaic layer includes at least one pin junction having a p-type semiconductor layer disposed on the first electrode layer side, an n-type semiconductor layer disposed on the second electrode layer side, and an i-type semiconductor layer disposed between the p-type semiconductor layer and the n-type semiconductor layer. 10 . The method of claim 5 , wherein the photovoltaic layer includes at least one pn junction having a p-type semiconductor layer disposed on the first electrode layer side and an n-type semiconductor layer disposed on the second electrode layer side. 11 . The method of claim 1 , wherein the first electrode layer is a reduction electrode which reduces at least one selected from the group consisting of carbon dioxide and water, and the second electrode layer is an oxidation electrode which oxidizes water, and wherein the catalyst layer contains at least one selected from the group consisting of gold, silver, copper, platinum, palladium, nickel, zinc, cadmium, indium, tin, cobalt, iron, and lead, as the metal. 12 . A photoelectrode manufactured by the method for manufacturing the photoelectrode of claim 1 . 13 . A photoelectrochemical reaction device comprising: the photoelectrode of claim 12 ; and an electrolytic bath to store an electrolytic solution in which the photoelectrode is immersed. 14 . The device of claim 13 , wherein one of the first electrode layer and the second electrode layer oxidizes water to generate oxygen, and the other of the first electrode layer and the second electrode layer reduces carbon dioxide to generate a carbon compound. 15 . A photoelectrochemical reaction device comprising: a photoelectrode including a first electrode layer, a second electrode layer, a photovoltaic layer disposed between the first electrode layer and the second electrode layer, a catalyst layer formed on the first electrode layer, and a wiring member electrically connected to the second electrode layer; and an electrolytic bath to store an electrolytic solution in which the photoelectrode is immersed, wherein the wiring member is led out of the electrolytic bath.
by electrolysis of water · CPC title
Chemistry & Metallurgy · mapped topic
Light-sensitive devices · CPC title
Chemistry & Metallurgy · mapped topic
from solutions (C25D5/34 - C25D5/46 take precedence) · CPC title
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