Methods And Apparatuses For High Temperature Bonding Controlled Processing And Bonded Substrates Formed Therefrom

Patent metadata

Field	Value
Publication number	US-2017129031-A1
Application number	US-201615344532-A
Country	US
Kind code	A1
Filing date	Nov 6, 2016
Priority date	Nov 6, 2015
Publication date	May 11, 2017
Grant date	—

Abstract

Methods and apparatuses for controlled processing of high temperature bonding systems via devices to control heating and cooling systems of a high temperature heating bonding includes use of a sinter fixture device including a plate surface, that is shaped to contact and conform to a contacting surface of a TLPS substrate assembly, and a plurality of channels below the plate surface within a base body of the sinter fixture device shaped to receive heating and cooling elements. A first set of the one or more channels includes a plurality of cross-channels, a cooling medium inlet, and a cooling medium outlet, which cross-channels, cooling medium inlet, and cooling medium outlet are in fluid communication with one another. A second set of the one or more channels includes a plurality of heating element passageways.

First claim

What is claimed is:

1 . A sinter fixture device for use in a controlled processing of high temperature bonding of substrates, the sinter fixture device comprising:
a base body comprising a metal that is at least one of copper and aluminum; a plate surface that is shaped to contact and conform to a contacting surface of a substrate assembly, wherein the substrate assembly comprises a low melting point material and one or more high melting point materials between first and second substrates, the one or more high melting point materials having a melting temperature that is higher than a melting temperature of the low melting point material; and a plurality of channels below the plate surface within the base body of the sinter fixture device shaped to receive heating and cooling elements, wherein:
a first set of the plurality of channels includes a plurality of cross-channels, a cooling medium inlet, and a cooling medium outlet, which cross-channels, cooling medium inlet, and cooling medium outlet are in fluid communication with one another; and
a second set of the plurality of channels includes a plurality of heating element passageways.

2 . The sinter fixture device of claim 1 , wherein the first set of the plurality of channels comprises a pathway for a cooling medium.

3 . The sinter fixture device of claim 2 , wherein the cooling medium is deionized water.

4 . The sinter fixture device of claim 1 , wherein the second set of the plurality of channels is positioned away from the first set of the plurality of channels.

5 . The sinter fixture device of claim 1 , wherein:
the plurality of cross-channels extend within the sinter fixture device between a pair of sidewalls of the sinter fixture device and are associated with apertures defined in the pair of sidewalls; and the cooling medium inlet and the cooling medium outlet are defined by a respective pair of apertures disposed within a first surface of the sinter fixture device that extends between ends of the pair of sidewalls.

6 . The sinter fixture device of claim 1 , further comprising an integrated temperature sensor to provide temperature readings associated with one or more heating and cooling elements disposed within the plurality of channels.

7 . A system for assessing high temperature bonding of substrates, the system comprising:
a sinter fixture device comprising a plate surface and abase body comprising one or more channels associated with one or more heating and cooling systems, wherein the one or more channels are disposed below the plate surface; a substrate assembly disposed on the plate surface of the sinter fixture device, wherein:
the substrate assembly comprises a first substrate, a second substrate, and a low melting point material and one or more high melting point materials disposed between the first and second substrates;
the one or more high melting point materials have a melting temperature that is higher than a melting temperature of the low melting point material; and
the plate surface is shaped to contact and conform to a contacting surface of the substrate assembly;
a processor; and a non-transitory computer-readable storage medium in communication with the processor, the non-transitory computer-readable storage medium including one or more programming instructions executable by the processor to cause the processor to:
control one or more heating elements associated with a first set of the one or more channels of the sinter fixture device and a flow of a cooling fluid through a second set of the one or more channels of the sinter fixture device to achieve a process temperature profile to form a bond layer between the first and second substrates.

8 . The system of claim 7 , further comprising one or more temperature sensors in communication with the sinter fixture device, the one or more programming instructions executable by the processor to cause the processor to receive temperature information from the one or more temperature sensors.

9 . The system of claim 7 , the one or more programming instructions are executable by the processor to cause the processor to monitor a level of outgassing when the process temperature profile is applied to the substrate assembly disposed on the sinter fixture device within a vacuum environment to form the bond layer between the first and second substrates.

10 . The system of claim 7 , wherein the one or more cooling systems are associated with the first set of the one or more channels, wherein the first set of the one or more channels includes a plurality of cross-channels, a cooling medium inlet, and a cooling medium outlet, which cross-channels, cooling medium inlet, and cooling medium outlet are in fluid communication with one another.

11 . The system of claim 10 , wherein:
the one or more heating systems are associated with the second set of the one or more channels; the second set of the one or more channels includes a plurality of heating element passageways; and the second set of the one or more channels is positioned away from the first set of the one or more channels.

12 . A method for controlled processing of high temperature bonding of substrates, the method comprising:
disposing a low melting point material and one or more high melting point materials between first and second substrates to form a substrate assembly having a contacting surface, wherein the one or more high melting point materials have a melting temperature that is higher than a melting temperature of the low melting point material; disposing the substrate assembly on a plate surface of a sinter fixture device, wherein:
the plate surface is shaped to contact and conform to the contacting surface of the substrate assembly,
the sinter fixture device comprises a base body comprising one or more channels associated with one or more heating and cooling systems, and
the one or more channels are disposed below the plate surface; and
controlling, by a processor, the one or more heating and cooling systems within the one or more channels disposed below the plate surface of the sinter fixture device to apply a process temperature profile to form a bond layer between the first and second substrates.

13 . The method of claim 12 , further comprising:
monitoring, by the processor, a temperature of the sinter fixture device by one or more temperature sensors in communication with the sinter fixture device, wherein the process temperature profile is maintained within a predetermined range within which the monitored temperature of the sinter fixture device is kept; and applying, by the processor, a temperature feedback loop to the sinter fixture device based on the maintained process temperature profile.

14 . The method of claim 12 , wherein the sinter fixture device is within a vacuum environment.

15 . The method of claim 12 , wherein the first substrate comprises Si or SiC.

16 . The method of claim 12 , wherein the second substrate is direct bonded copper or direct bonded aluminum.

17 . The method of claim 12 , wherein the high temperature bonding comprises one of a transient liquid phase sintering heating or a diffusion soldering.

18 . The method of claim 12 , wherein the low melting point material comprises a weight percent of 70% tin and the one or more high melting point materials comprises a weight percent of 30% Ni.

19 . The method of claim 12 , wherein the one or more high melting point materials comprises a material that is selected from at least one of a group consisting of Ni, Cu, Ag, an

Assignees

• Toyota Motor Eng & Mfg North America Inc
• Univ Maryland

Inventors

• Greve Hannes Martin Hinrich
• Mccluskey F Patrick
• Joshi Shailesh N

Classifications

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/07341

  Controlling the bonding environment, e.g. atmosphere composition or temperature · CPC title

• H10W72/07336

  Soldering or alloying · CPC title

• H10W72/07331

  Connecting techniques · CPC title