Flexible Organic Light Emitting Display Device and Method of Fabricating the Same

Patent metadata

Field	Value
Publication number	US-2017125732-A1
Application number	US-201615288811-A
Country	US
Kind code	A1
Filing date	Oct 7, 2016
Priority date	Oct 29, 2015
Publication date	May 4, 2017
Grant date	—

Abstract

A flexible organic light emitting display (OLED) device includes an organic emitting diode on a flexible substrate, an encapsulation film covering the organic emitting diode and including a first inorganic layer and an organic layer. The first inorganic layer is formed of a first material, and at least a portion of the first inorganic layer includes a dopant that increases the surface energy of the doped material compared to that of non-doped material.

First claim

What is claimed is:

1 . A flexible organic light emitting display (OLED) device, comprising:
a flexible substrate; an organic emitting diode on the flexible substrate; and an encapsulation film covering the organic emitting diode, the encapsulation film including:
a first inorganic layer comprising a first material and encapsulating the organic emitting diode, at least a portion of the first inorganic layer also comprising a dopant that increases surface energy of the doped first material compared to surface energy of the non-doped first material; and
an organic layer on the first inorganic layer.

2 . The flexible OLED device of claim 1 , wherein the first material is silicon oxide, and the dopant is nitrogen.

3 . The flexible OLED device of claim 1 , wherein the portion is a top surface of the first inorganic layer.

4 . The flexible OLED device of claim 1 , wherein within said portion of the first inorganic layer, a concentration of the dopant in a first portion of the first inorganic layer is higher than a concentration of the dopant in a second portion of the first inorganic layer closer to the organic emitting diode than the first portion.

5 . The flexible OLED device of claim 4 , wherein a concentration of the dopant in a third portion of the first inorganic layer between the first portion and the second portion is higher than the concentration in the second portion but lower than the concentration in the first portion.

6 . The flexible OLED device of claim 4 , wherein the second portion of the first inorganic layer includes the non-doped first material.

7 . The flexible OLED device of claim 4 , wherein the first material is silicon oxide and the dopant is nitrogen, and when a chemical formula for the doped first material in the first portion is Si x1 O y1 N z1 :H, and a chemical formula for the doped first material in the second portion is Si x2 O y2 N z2 :H, wherein x1≦x2, y1<y2, and z1>z2.

8 . The flexible OLED device of claim 7 , wherein 0.8≦x1, x2≦1.2, 1.4≦y1, y2≦1.9, 0<z1≦0.5, and 0≦z2≦0.5.

9 . The flexible OLED device of claim 1 , wherein the dopant has a concentration gradient in the portion of the first inorganic layer.

10 . The flexible OLED device of claim 1 , wherein the encapsulation film further includes a second inorganic layer covering the organic layer and including silicon oxide, silicon nitride, or siliconoxynitride.

11 . The flexible OLED device of claim 10 , wherein the second inorganic layer is thicker than the first inorganic layer.

12 . The flexible OLED device of claim 1 , further comprising:
a thin film transistor between the flexible substrate and the organic emitting diode; and a passivation layer between the thin film transistor and the organic emitting diode, wherein the organic emitting diode is electrically connected to the thin film transistor.

13 . A method of fabricating a flexible organic light emitting display (OLED) device, comprising:
forming an organic emitting diode on a flexible substrate; forming a first layer of first material on the organic emitting layer to encapsulate the organic emitting layer; performing a plasma treating process with gas containing a dopant on the first layer to form a first inorganic layer having at least a portion comprising the dopant, wherein the dopant increases surface energy of the doped first material compared to surface energy of the non-doped first material; and forming an organic layer on the first inorganic layer.

14 . The method of claim 13 , wherein the first material is silicon oxide, and the first layer of silicon oxide is formed by an atomic layer deposition (ALD) process.

15 . The method of claim 14 , wherein the atomic layer deposition process uses a precursor selected from bis(ethylmethylamino)silane, diisopropylaminosilane, trimethylsilylazide, and tris(dimethylamino)silane, O 2 reaction gas, and N 2 purge gas.

16 . The method of claim 13 , wherein the dopant is nitrogen.

17 . The method of claim 16 , wherein the gas containing the dopant is N 2 O gas or NH 3 gas.

18 . The method of claim 13 , wherein a concentration of the dopant in a first portion of the first inorganic layer is higher than a concentration of the dopant in a second portion of the first inorganic layer closer to the organic emitting diode than the first portion.

19 . The method of claim 13 , further comprising forming a second inorganic layer covering the organic layer, the second inorganic layer including silicon oxide, silicon nitride, or siliconoxynitride.

20 . The method of claim 13 , wherein the first material is silicon oxide, and the first layer of silicon oxide is formed by an atomic layer deposition (ALD) process and a second inorganic layer is formed by a plasma enhanced chemical vapor deposition (PECVD) process such that the second inorganic layer is thicker than the first inorganic layer.

Assignees

• Lg Display Co Ltd

Inventors

• Lee Jae-Young
• Kim Ji-Min
• KIM Gi-Youn
• Oh Sang-Hoon
• Lee Wan-Soo

Classifications

• Y02E10/549

  Organic PV cells · CPC title

• H10K59/8731 Primary

  multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers · CPC title

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title

• H10K50/844

  Encapsulations · CPC title

• H10K77/111 Primary

  Flexible substrates · CPC title