Complementary metal-oxide-semiconductor (cmos) inverter circuit device

Patent metadata

Field	Value
Publication number	US-2017117894-A1
Application number	US-201715398318-A
Country	US
Kind code	A1
Filing date	Jan 4, 2017
Priority date	Oct 18, 2013
Publication date	Apr 27, 2017
Grant date	—

Abstract

There is provided a CMOS inverter circuit device. The CMOS inverter circuit device includes a delay circuit unit configured to generate different charge and discharge paths of each gate node of a PMOS transistor and an NMOS transistor respectively at the time that an input signal transitions between high and low levels. Therefore, the present examples minimize or erase generation of a short circuit current made at the time that the input signal transition. The examples may simplify circuit architecture, and may make a magnitude of a CMOS inverter circuit device smaller.

First claim

What is claimed is:

1 . A CMOS inverter circuit device, comprising:
a first P-type metal-oxide-semiconductor (PMOS) transistor and a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second PMOS transistor and a second NMOS transistor configured to: each receive an identical input signal through a gate terminal, and be connected in series respectively; a third PMOS transistor connected to a first node connected with drains of the first PMOS transistor and the first NMOS transistor; a third NMOS transistor connected to a second node connected with drains of the second PMOS transistor and the second NMOS transistor; and a delay circuit unit comprising: a fourth PMOS transistor and a fourth NMOS transistor configured to: each receive the input signal through a respective gate, and be connected in series in order for a fifth node connected with drains of the fourth PMOS transistor and the fourth NMOS transistor to be connected to a fourth node connected with a source of the first NMOS transistor and a source of the second PMOS transistor.

2 . The CMOS inverter circuit device of claim 1 ,
wherein the sources of the third PMOS transistor, the first PMOS transistor and the fourth PMOS transistor are connected to a power supply terminal, and wherein the sources of the third NMOS transistor, the second NMOS transistor, and the fourth NOMS transistor are connected to a ground terminal.

3 . The CMOS inverter circuit device of claim 2 ,
wherein a discharge path through the second NMOS transistor and a discharge path through the first NMOS transistor and the fourth NMOS transistor are generated when the input signal is at a high level.

4 . The CMOS inverter circuit device of claim 3 ,
wherein the second node is discharged and the first node is discharged.

5 . The CMOS inverter circuit device of claim 4 ,
wherein the third PMOS transistor and the third NMOS transistor are maintained in a turned-off state until the second node is discharged and the first node is discharged.

6 . The CMOS inverter circuit device of claim 2 ,
wherein a charge path through the first PMOS transistor and a charge path through the fourth PMOS transistor and the second PMOS transistor are generated when the input signal is at a low level.

7 . The CMOS inverter circuit device of claim 6 ,
wherein the first node is charged and the second node is charged.

8 . The CMOS inverter circuit device of claim 7 ,
wherein the third PMOS transistor and the third NMOS transistor are maintained in a turned-off condition until the first node is charged and the second node is charged.

9 . The CMOS inverter circuit device of claim 1 ,
wherein the fourth PMOS transistor and the fourth NMOS transistor of the delay unit circuit are configured to have channel lengths greater than channel lengths of the first, the second, and the third PMOS and NMOS transistors.

10 . The CMOS inverter circuit device of claim 1 ,
wherein the fourth PMOS transistor and fourth NMOS transistor of the delay unit circuit comprise a fifth PMOS transistor and a fifth NMOS transistor connected in series.

11 . The CMOS inverter circuit device of claim 9 ,
wherein channel lengths of the fifth PMOS and the fifth NMOS are the same as those of the fourth PMOS transistor and the fourth NMOS transistor.

12 . The CMOS inverter circuit device of claim 9 ,
wherein the channel lengths of the fifth PMOS and the fifth NMOS are different from those of the fourth PMOS transistor and the fourth NMOS transistor.

13 . The CMOS inverter circuit device of claim 9 ,
wherein charging and discharging durations are controlled based on the number of the PMOS transistors and the NMOS transistors of the delay unit circuit.

14 . A CMOS inverter circuit device, comprising:
a first P-type metal-oxide-semiconductor (PMOS) transistor and a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second PMOS transistor and a second NMOS transistor configured to: each receive an identical input signal through a gate terminal, and be connected in series respectively; a third PMOS transistor connected to a first node connected with drains of the first PMOS transistor and the first NMOS transistor; a third NMOS transistor connected to a second node connected with drains of the second PMOS transistor and the second NMOS transistor; and a delay circuit unit comprising: delay PMOS transistors and delay NMOS transistors configured to: each receive the input signal through a respective gate, and be connected in series in order for a fifth node connected with drains of the delay PMOS transistors and the delay NMOS transistors to be connected to a node connected with a source of the first NMOS transistor and a source of the second PMOS transistor, wherein the delay circuit is configured to generate a charge or discharge signal delay between the first node and the second node responsive to a number of transistors in a charge or discharge path.

15 . The CMOS inverter circuit device of claim 13 ,
wherein charging and discharging durations are controlled based on the number of the delay PMOS transistors and delay NMOS transistors of the delay unit circuit.

Assignees

• Magnachip Semiconductor Ltd

Inventors

• Ryu Beom Seon
• Lim Gyu Ho
• Kang Tae Kyoung

Classifications

• H03K19/00315

  in field-effect transistor circuits · CPC title

• H03K19/0013 Primary

  in field effect transistor circuits · CPC title

• H03K19/0948

  using CMOS {or complementary insulated gate field-effect transistors} · CPC title

• H03K19/00323

  Delay compensation · CPC title