Semiconductor Devices, Power Semiconductor Devices, and Methods for Forming a Semiconductor Device

Patent metadata

Field	Value
Publication number	US-2017110572-A1
Application number	US-201615288243-A
Country	US
Kind code	A1
Filing date	Oct 7, 2016
Priority date	Oct 15, 2015
Publication date	Apr 20, 2017
Grant date	—

Abstract

A semiconductor device includes a drift region of a device structure arranged in a semiconductor layer. The drift region includes at least one first drift region portion and at least one second drift region portion. A majority of dopants within the first drift region portion are a first species of dopants having a diffusivity less than a diffusivity of phosphor within the semiconductor layer. Further, a majority of &pants within the second drift region portion are a second species of dopants. Additionally, the semiconductor device includes a trench extending from a surface of the semiconductor layer into the semiconductor layer. A vertical distance of a border between the first drift region portion and the second drift region portion to the surface of the semiconductor layer is larger than 0.5 times a maximal depth of the trench and less than 1.5 times the maximal depth of the trench.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
adrift region of a device structure arranged in a semiconductor layer, wherein the drift region comprises at least one first drift region portion and at least one second drift region portion, wherein a majority of dopants within the at least one first drift region portion are a first species of dopants having a diffusivity less than a diffusivity of phosphor within the semiconductor layer, wherein a majority of dopants within the al least one second drift region portion are a second species of dopants; and a trench extending from a surface of the semiconductor layer into the semiconductor layer, wherein a vertical distance between the surface of the semiconductor layer and a border between the at least one first drift region portion and the at least one second drift region portion is larger than 0.5 times a maximal depth of the trench and less than 1.5 times the maximal depth of the trench.

2 . The semiconductor device of claim 1 , wherein the device structure is a transistor structure and the trench is a gate trench of the transistor structure, and wherein a gate electrode of the transistor structure is located within the gate trench.

3 . The semiconductor device of claim 1 , further comprising a body region of the device structure, wherein the body region is located adjacent to the at least one second drift region portion.

4 . The semiconductor device of claim 1 , wherein a maximal doping concentration within the at least one first drift region portion and the at least one second drift region portion of the drift region is less than 1*10 18 doping atoms per cm 3 .

5 . The semiconductor device of claim 1 , wherein an average net doping concentration value of the drift region is at least 1*10 16 doping atoms per cm 3 .

6 . The semiconductor device of claim 1 , wherein a local minimum of a net doping concentration of the drift region is located at the border between the at least one first drift region portion and the at least one second drift region portion.

7 . The semiconductor device of claim 1 , wherein the vertical distance between the surface of the semiconductor layer and the border between the at least one first drift region portion and the at least one second drift region portion is larger than the maximal depth of the trench.

8 . The semiconductor device of claim 1 , wherein the second species of doping atoms is phosphor.

9 . The semiconductor device of claim 1 , wherein a vertical extension of the at least one first drift region portion is larger than 1 μm.

10 . The semiconductor device of claim 1 , further comprising a semiconductor substrate located adjacent to the semiconductor layer, wherein a doping concentration at a transition from the driftregion to the semiconductor substrate varies between a first doping concentration value and a second doping concentration value over a distance of less than 500 nm, wherein the first doping concentration value is an average net doping concentration of a mid-portion of the drift region plus 20% of the average net doping concentration of the mid-portion of the drift region, wherein the mid-portion of the drift region lies within a middle 50% of a vertical dimension of the drift region, and wherein the second doping concentration value is an average net doping concentration of the mid-portion of the drift region plus one decade.

11 . The semiconductor device of claim 10 , wherein the doping concentration at the transition from the drift region to the semiconductor substrate increases from the first doping concentration value to the second doping concentration value over a distance of rnore than 100 nm.

12 . The semiconductor device of claim 10 , wherein the semiconductor substrate is doped with doping atoms having a diffusivity less than a diffusivity of phosphor within the semiconductor substrate.

13 . The semiconductor device of claim 10 , wherein the semiconductor layer and the semiconductor substrate are doped with the same doping atoms.

14 . The semiconductor device of claim 10 , wherein an average net doping concentration of a source or collector region arranged in the semiconductor substrate is at least 1*10 19 doping atoms per cm 3 .

15 . The semiconductor device of claim 1 , —vherein the semiconductor layer has a thickness of less than 8 μm.

16 . The semiconductor device of claim 1 , wherein the semiconductor layer is an epitaxially grown semiconductor layer.

17 . The semiconductor device of claim 1 , wherein the device structure of the semiconductor device comprises a breakdown voltage of at least 10 V.

18 . A semiconductor device, comprising:
a drift region of a device structure arranged in a semiconductor layer located adjacently to a senkonductor substrate, wherein a doping concentration at a transition from the drift region to the semiconductor substrate varies between a first doping concentration value and a second doping concentration value over a distance of less than 500 nm, wherein the first doping concentration value is an average net doping concentration of a mid-portion of the drift reinon plus 20% of the average net dopinLi concentration of the mid-portion of the drift region, wherein the mid-portion of the drift region lies within a middle 50% of a vertical dimension of the drift region, wherein the second doping concentration value is an average net doping concentration of the mid-portion of the drift region plus one decade.

19 . The semiconductor device of claim 18 , wherein the doping concentration at the trans on from the drift region to the semiconductor substrate increases from the first doping concentration value to the second doping concentration value over a distance of more than 100 nm.

20 . The semiconductor device of claim 18 , wherein the semiconductor substrate is doped with doping atoms having a diffusivity less than a diffusivity of phosphor within the semiconductor substrate.

21 . The semiconductor device of claim 18 , wherein the semiconductor layer and the semiconductor substrate are doped with the same doping atoms.

22 . The semiconductor device of claim 18 , wherein an average net doping concentration of a source or collector region arranged in the semiconductor substrate is at least 1 * 10 19 doping atoms per cm 3 .

23 . A power semiconductor device, comprising:
epitaxial semiconductor layer located adjacent to a semiconductor substrate, wherein the epitaxial semiconductor layer is doped with doping atoms having a diffusivity less than phosphor in the epitaxial semiconductor layer, wherein the semiconductor substrate is doped with doping atoms having diffusivity less than phosphor in the semiconductor substrate.

24 . A method for forming a semiconductor device, the method comprising:
epitaxially growing a first epitaxial semiconductor sub layer of a semiconductor layer, wherein a majority of dopants within the first epitaxial semiconductor sub layer are a first species of dopants having a diffusivity less than a diffusivity of phosphor within the semiconductor layer; epitaxially growing a second epitaxial semiconductor sub layer of a semiconductor layer after forming the first epitaxial semiconductor sub layer, wherein a majority of dopants within the second epitaxial semiconductor sub layer are a second species of dopants; and forming a trench extending from a surface of the semiconductor layer into the semiconductor layer, wherein a

Assignees

• Infineon Technologies Ag

Inventors

• Zundel Markus
• Kampen Christian
• Ludwig Jacob Tillmann

Classifications

• H10D64/2527

  for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies · CPC title

• H01L29/7813 Primary

  Electricity · mapped topic

• H01L29/66734

  Electricity · mapped topic

• H01L29/1095

  Electricity · mapped topic

• H01L29/4236

  Electricity · mapped topic