Transparent conductive film
US-2015093587-A1 · Apr 2, 2015 · US
US2017097534A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017097534-A1 |
| Application number | US-201615070707-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 15, 2016 |
| Priority date | Oct 5, 2015 |
| Publication date | Apr 6, 2017 |
| Grant date | — |
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A transparent conductive film includes a first conductive layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The second conductive layer includes silver (Ag) and an alloy element, the alloy element has a smaller atomic radius than the Ag, and a thickness of the second conductive layer is in a range of 20 Å to 60 Å.
Opening claim text (preview).
What is claimed is: 1 . A transparent conductive film comprising: a first conductive layer; a second conductive layer disposed on the first conductive layer; and a third conductive layer disposed on the second conductive layer, wherein: the second conductive layer comprises silver (Ag) and an alloy element; the alloy element has a smaller atomic radius than the Ag; and a thickness of the second conductive layer is in a range of 20 Å to 60 Å. 2 . The transparent conductive film of claim 1 , wherein the thickness of the second conductive layer is in a range of 30 Å to 50 Å. 3 . The transparent conductive film of claim 1 , wherein the alloy element comprises at least one selected from the group consisting of zinc (Zn), nickel (Ni), cobalt (Co), copper (Cu), gallium (Ga), germanium (Ge), platinum (Pt), antimony (Sb), manganese (Mn), tungsten (W), and molybdenum (Mo). 4 . The transparent conductive film of claim 3 , wherein the second conductive layer further comprises indium (In). 5 . The transparent conductive film of claim 1 , wherein the content of the alloy element of the second conductive layer is in a range of 2 wt % to 35 wt %. 6 . The transparent conductive film of claim 1 , wherein the first conductive layer and the third conductive layer comprise at least one selected from the group consisting of ITO, IZO, and AZO. 7 . The transparent conductive film of claim 6 , wherein a thickness of each of the first conductive layer and the third conductive layer is in a range of 20 Å to 70 Å. 8 . The transparent conductive film of claim 1 , wherein light transmittance of the transparent conductive film is 80% or more. 9 . A liquid crystal display (LCD) comprising: a liquid crystal (LC) layer on a first substrate, the liquid crystal (LC) layer comprising a plurality of LC molecules; and a pixel electrode and a common electrode configured to apply an electric field to the LC layer, wherein: the common electrode comprises a first conductive layer, a second conductive layer on the first conductive layer, and a third conductive layer on the second conductive layer; and the second conductive layer comprises Ag and an alloy element; the alloy element has a smaller atomic radius than the Ag; and a thickness of the second conductive layer is in a range of 20 Å to 60 Å. 10 . The LCD of claim 9 , wherein the thickness of the second conductive layer is in a range of 30 Å to 50 Å. 11 . The LCD of claim 9 , wherein the content of the alloy element of the second conductive layer is in a range of 2 wt % to 35 wt %. 12 . The LCD of claim 11 , wherein the alloy element comprises at least one selected from the group consisting of zinc (Zn), nickel (Ni), cobalt (Co), copper (Cu), gallium (Ga), germanium (Ge), platinum (Pt), antimony (Sb), manganese (Mn), tungsten (W), and molybdenum (Mo). 13 . The LCD of claim 12 , wherein the second conductive layer further comprises indium (In). 14 . The LCD of claim 9 , wherein the first conductive layer and the third conductive layer comprise at least one selected from the group consisting of ITO, IZO, and AZO. 15 . The LCD of claim 14 , wherein a thickness of each of the first conductive layer and the third conductive layer is in arrange of 20 Å to 70 Å. 16 . The LCD of claim 9 , wherein light transmittance of the common electrode is 80% or more. 17 . The LCD of claim 9 , further comprising a second substrate opposing the first substrate, wherein the pixel electrode is positioned on the first substrate, the common electrode is positioned on the second substrate, and the LC layer is disposed between the pixel electrode and the common electrode. 18 . The LCD of claim 17 , wherein the LC molecules are horizontally arranged, and the LC molecules are rotated 90° and arranged between the pixel electrode and the common electrode. 19 . The LCD of claim 9 , wherein: a thin film transistor is positioned on the first substrate and electrically connected to the pixel electrode, and a planarization layer is positioned on the thin film transistor; the common electrode is positioned on the planarization layer; and an insulation layer is formed on the common electrode, and the pixel electrode is disposed on the insulation layer formed on the common electrode. 20 . The LCD of claim 9 , wherein: a thin film transistor is positioned on the first substrate and electrically connected to the pixel electrode, and a planarization layer is positioned between the thin film transistor and the pixel electrode; and micro-cavities filled with the LC layer are positioned on the planarization layer, and the micro-cavities are disposed for each pixel of the LCD. 21 . The LCD of claim 20 , wherein the pixel electrode is positioned below the micro-cavities, and the common electrode is disposed on the micro-cavities.
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