Optoelectric devices comprising hybrid metamorphic buffer layers

Patent metadata

Field	Value
Publication number	US-2017092798-A1
Application number	US-201615379141-A
Country	US
Kind code	A1
Filing date	Dec 14, 2016
Priority date	Apr 10, 2013
Publication date	Mar 30, 2017
Grant date	—

Abstract

In one aspect, semiconductor structures are described herein. A semiconductor structure, in some implementations, comprises a first semiconductor layer having a first bandgap and a first lattice constant and a second semiconductor layer having a second bandgap and a second lattice constant. The second lattice constant is lower than the first lattice constant. Additionally, a transparent metamorphic buffer layer is disposed between the first semiconductor layer and the second semiconductor layer. The buffer layer has a constant or substantially constant bandgap and a varying lattice constant. The varying lattice constant is matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer. The buffer layer comprises a first portion comprising Al y Ga z In (1-y-z) As and a second portion comprising Ga x In (1-x) P. The first portion is adjacent the first semiconductor layer and the second portion is adjacent the second semiconductor layer.

First claim

That which is claimed is:

1 . A semiconductor structure comprising:
a first semiconductor layer having a first bandgap and a first lattice constant; a second semiconductor layer having a second bandgap and a second lattice constant, the second lattice constant being lower than the first lattice constant; and a transparent metamorphic buffer layer disposed between the first semiconductor layer and the second semiconductor layer, the transparent metamorphic buffer layer having a constant or substantially constant bandgap and a varying lattice constant, the varying lattice constant being matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer, wherein the transparent metamorphic buffer layer comprises a first portion comprising Al y Ga z In (1-y-z) As and a second portion comprising Ga x In (1-x) P, the first portion being adjacent the first semiconductor layer and forming between 2 percent and 50 percent of the total thickness of the transparent metamorphic buffer layer, and the second portion being adjacent the second semiconductor layer and forming between 50 percent and 98 percent of the total thickness of the transparent metamorphic buffer layer, and wherein the second portion of the transparent metamorphic buffer layer comprises a plurality of compositionally graded steps comprising Ga x In (1-x) P.

2 . The structure of claim 1 , wherein the In content of the first portion of the transparent metamorphic buffer layer increases from the second semiconductor layer to the first semiconductor layer.

3 . The structure of claim 2 , wherein the Al content of the first portion of the transparent metamorphic buffer layer increases from the second semiconductor layer to the first semiconductor layer and a bandgap of the first portion of the transparent metamorphic buffer layer is constant or substantially constant.

4 . The structure of claim 1 , wherein the first portion of the transparent metamorphic buffer layer forms between 5 percent and 40 percent of the total thickness of the transparent metamorphic buffer layer.

5 . The structure of claim 1 , wherein the first portion of the transparent metamorphic buffer layer compensates for at least 3 percent of the lattice mismatch between the first lattice constant and the second lattice constant.

6 . The structure of claim 1 , wherein the first portion of the transparent metamorphic buffer layer comprises a plurality of compositionally graded steps comprising Al y Ga z In (1-y-z) As, and wherein one of the plurality of Al y Ga z In (1-y-z) As steps is adjacent one of the plurality of Ga x In (1-x) P steps, the adjacent Al y Ga z In (1-y-z) As and Ga x In (1-x) P steps having the same lattice constant.

7 . The structure of claim 6 , wherein one or both of the adjacent Al y Ga z In (1-y-z) As and Ga x In (1-x) P steps has a thickness of at least 0.2 μm.

8 . The structure of claim 6 , wherein the second portion of the transparent metamorphic buffer layer comprises a Ga x In (1-x) P step having a lattice constant greater than the lattice constant of the adjacent Al y Ga z In (1-y-z) As and Ga x In (1-x) P steps and positioned closer to the second semiconductor layer than the adjacent Al y Ga z In (1-y-z) As and Ga x In (1-x) P steps are.

9 . The structure of claim 1 , wherein the first bandgap is 0.73 eV or less.

10 . The structure of claim 1 , wherein the second bandgap is higher than the first bandgap.

11 . The structure of claim 1 further comprising:
a third semiconductor layer having a third bandgap and a third lattice constant, the third lattice constant being lower than the second lattice constant; and
a second transparent metamorphic buffer layer disposed between the second semiconductor layer and the third semiconductor layer, the second transparent metamorphic buffer layer having a constant or substantially constant bandgap and a varying lattice constant, the varying lattice constant being matched to the second lattice constant adjacent the second semiconductor layer and matched to the third lattice constant adjacent the third semiconductor layer.

12 . The device of claim 11 , wherein the third bandgap is higher than the second bandgap.

13 . An optoelectronic device comprising:
a first subcell comprising a first semiconductor layer having a first bandgap and a first lattice constant; a second subcell comprising a second semiconductor layer having a second bandgap and a second lattice constant, the second lattice constant being lower than the first lattice constant; and a transparent metamorphic buffer layer disposed between the first semiconductor layer and the second semiconductor layer, the transparent metamorphic buffer layer having a constant or substantially constant bandgap and a varying lattice constant, the varying lattice constant being matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer, wherein the transparent metamorphic buffer layer comprises a first portion comprising Al y Ga z In (1-y-z) As and a second portion comprising Ga x In (1-x) P, the first portion being adjacent the first semiconductor layer and forming between 2 percent and 50 percent of the total thickness of the transparent metamorphic buffer layer, and the second portion being adjacent the second semiconductor layer and forming between 50 percent and 98 percent of the total thickness of the transparent metamorphic buffer layer, and wherein the second portion of the transparent metamorphic buffer layer comprises a plurality of compositionally graded steps comprising Ga x In (1-x) P.

14 . The device of claim 13 , wherein the In content and the Al content of the first portion of the transparent metamorphic buffer layer both increase from the second semiconductor layer to the first semiconductor layer and a bandgap of the first portion of the transparent metamorphic buffer layer is constant or substantially constant.

15 . The device of claim 13 , wherein the device further comprises a substrate and the first portion of the transparent metamorphic buffer layer compensates for between 5 percent and 15 percent of the lattice mismatch between the substrate and the first semiconductor layer.

16 . The device of claim 13 , wherein the first portion of the transparent metamorphic buffer layer comprises a plurality of compositionally graded steps comprising Al y Ga z In (1-y-z) As, and wherein one of the plurality of Al y Ga z In (1-y-z) As steps is adjacent one of the plurality of Ga x In (1-x) P steps, the adjacent Al y Ga z In (1-y-z) As and Ga x In (1-x) P steps having the same lattice constant.

17 . The device of claim 13 , wherein the transparent metamorphic buffer layer is transparent to electromagnetic radiation absorbable by the second subcell.

18 . The device of claim 13 further comprising:
a third subcell comprising a third semiconductor layer having a third bandgap and a third lattice constant, the third lattice constant being lower than the second lattice constant and the third bandgap being higher than the second bandgap; and
a second transparent metamorphic buffer layer disposed between the second semiconductor layer and the third semiconductor layer, the second transparent metamorphic buffer layer having a constant or substantially constant bandgap and a varying lattice constant, the varying lattice constant being matched to the second lattice constant adjacent the second semiconductor lay

Assignees

• Boeing Co

Inventors

• Liu Xing-Quan
• Fetzer Christopher M
• Law Daniel C
• King Richard R

Classifications

• H01L31/0392

  Electricity · mapped topic

• H01L31/06875 Primary

  Electricity · mapped topic

• H01L31/1844

  Electricity · mapped topic

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title

• H10F77/169

  Thin semiconductor films on metallic or insulating substrates · CPC title