Systems and Methods for Forming Nanowires Using Anodic Oxidation

Patent metadata

Field	Value
Publication number	US-2017092720-A1
Application number	US-201615373723-A
Country	US
Kind code	A1
Filing date	Dec 9, 2016
Priority date	Mar 31, 2014
Publication date	Mar 30, 2017
Grant date	—

Abstract

Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.

First claim

What is claimed is:

1 . A structure comprising:
a substrate; a protruding structure formed on the substrate; and one or more nanowires formed in the protruding structure, the substrate including a ridge section that extends under the protruding structure.

2 . The structure of claim 1 , wherein
the one or more nanowires extend along a first direction, and the ridge section extends along the first direction.

3 . The structure of claim 1 , wherein the protruding structure includes a nanowire-shaped structure, a nanoslate, a nanorod, or a nanostructure disposed between pads.

4 . The structure of claim 1 , wherein
the protruding structure has a width and a height, an aspect ratio of the protruding structure is equal to the height divided by the width, and the aspect ratio is larger than an aspect-ratio threshold.

5 . The structure of claim 1 , wherein the protruding structure includes a sidewall corresponding to a vertical shape, a trapezoidal shape, a scalloped shape, or a shape of which a top width is larger than or equal to a bottom width.

6 . The structure of claim 1 , wherein the protruding structure includes (i) the one or more nanowires, and (ii) dielectric material that surrounds the one or more nanowires.

7 . The structure of claim 6 , wherein a thickness of the dielectric material is greater in a lower portion of the protruding structure than in an upper portion of the protruding structure.

8 . A device comprising:
a source region formed on a substrate; a drain region formed on a substrate; and a gate structure including one or more nanowires disposed between the source region and the drain region, wherein the substrate includes a ridge section extending under the nanowires.

9 . The device of claim 8 , wherein the one or more nanowires are formed in a protruding structure, the ridge section extending under the protruding structure.

10 . The device of claim 9 , wherein the protruding structure includes a nanowire-shaped structure, a nanoslate, a nanorod, or a nanostructure disposed between pads.

11 . The device of claim 9 , wherein
the protruding structure has a width and a height, an aspect ratio of the protruding structure is equal to the height divided by the width, and the aspect ratio is larger than an aspect-ratio threshold.

12 . The device of claim 9 , wherein the protruding structure includes a sidewall corresponding to a vertical shape, a trapezoidal shape, a scalloped shape, or a shape of which a top width is larger than or equal to a bottom width.

13 . The device of claim 9 , wherein the protruding structure includes (i) the one or more nanowires, and (ii) dielectric material that surrounds the one or more nanowires.

14 . The device of claim 13 , wherein a thickness of the dielectric material is greater in a lower portion of the protruding structure than in an upper portion of the protruding structure.

15 . The device of claim 8 , wherein
the one or more nanowires extend along a first direction, and the ridge section extends along the first direction.

16 . A structure comprising:
a substrate; and a protruding structure formed on the substrate and comprising (i) one or more nanowires, and (ii) dielectric material that surrounds the one or more nanowires, a thickness of the dielectric material being greater in a lower portion of the protruding structure than in an upper portion of the protruding structure.

17 . The structure of claim 16 , wherein
the substrate includes a ridge section that extends along the protruding structure, the one or more nanowires extend along a first direction, and the ridge section extends along the first direction.

18 . The structure of claim 16 , wherein the protruding structure includes a nanowire-shaped structure, a nanoslate, a nanorod, or a nanostructure disposed between pads.

19 . The structure of claim 16 , wherein
the protruding structure has a width and a height, an aspect ratio of the protruding structure is equal to the height divided by the width, and the aspect ratio is larger than an aspect-ratio threshold.

20 . The structure of claim 16 , wherein the protruding structure includes a sidewall corresponding to a vertical shape, a trapezoidal shape, a scalloped shape, or a shape of which a top width is larger than or equal to a bottom width.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Univ Nat Taiwan

Inventors

• Hwu Jenn-Gwo
• Tian Wei-Cheng
• Tseng Po-Hao

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/6324

  Formation by anodic treatments, e.g. anodic oxidation · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• C25D17/06

  Suspending or supporting devices for articles to be coated · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title