Ultra low dielectric layer

Patent metadata

Field	Value
Publication number	US-2017092534-A1
Application number	US-201514871305-A
Country	US
Kind code	A1
Filing date	Sep 30, 2015
Priority date	Sep 30, 2015
Publication date	Mar 30, 2017
Grant date	—

Abstract

An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 1000 nm. A porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupies all gaps. An interface between the metal features and the porous low dielectric constant material may include less than about 0.1% by volume of voids. A method may include depositing a filling material including a silicon-based resin having a molecular weight of less than about 30,000 Da and a porogen having a molecular weight greater than about 400 Da onto a structure comprising a patterned metal. The deposited filling material may be subjected to a first thermal treatment to substantially fill all gaps, and subjected to a second thermal treatment and a UV radiation treatment.

First claim

1 . A method comprising:
depositing a filling material onto a structure comprising a patterned metal on a surface of a substrate, the patterned metal comprising metal features separated by gaps, the gaps having an average gap dimension of less than about 1000 nm, wherein the filling material comprises a silicon-based resin having a molecular weight of less than about 30,000 Da and a porogen having a molecular weight greater than about 400 Da; treating the deposited filling material in a first thermal treatment to substantially fill all gaps with the filling material; and treating the deposited filling material in a second thermal treatment, and applying a UV radiation treatment to the deposited filling material, thereby crosslinking the silicon-based resin and decomposing the porogen, thus form a porous low dielectric constant material having a dielectric value of less than about 2.7, wherein an interface between the metal features and the porous low dielectric constant material comprises less than about 0.1% by volume of voids after one or both of the second thermal treatment and the UV radiation treatment.

2 . The method of claim 1 , wherein the gaps have an average gap dimension of less than about 100 nm.

3 . The method of claim 1 , wherein the second thermal treatment and the UV radiation treatment are simultaneous for at least a predetermined time duration.

4 . The method of claim 3 , wherein the predetermined time duration comprises substantially an entire duration of the second thermal treatment.

5 . The method of claim 3 , wherein the predetermined time duration comprises substantially an entire duration of the UV radiation treatment.

6 . The method of claim 1 , wherein the porogen has an HLB (hydrophilic-lipophilic balance) value greater than about 16.

7 . The method of claim 6 , wherein the porogen has a molecular weight greater than about 1000 Da.

8 . The method of claim 1 , wherein the first thermal treatment comprises heating the deposited filling material to a temperature from about 75 to about 250° C. for a time from about 1 minute to about 30 minutes.

9 . The method of claim 1 , wherein the second thermal treatment comprises heating the thermally treated deposited filling material to a temperature in the range of about 300° C. to about 500° C. for a time from about 1 minutes to about 120 minutes.

10 . The method of claim 1 , wherein the UV radiation treatment comprises exposing the filling material to radiation of a wavelength from about 100 to about 400 nm for a time from about 30 seconds to about 600 seconds.

11 . The method of claim 1 , wherein the interface is substantially free of voids.

12 . The method of claim 1 , wherein a maximum critical dimension of the voids is less than about 5 nm.

13 . The method of claim 1 , wherein the average gap dimension is less than about 100 nm.

14 . The method of claim 1 , wherein the depositing the filling material comprises spin-on coating of the filling material onto the patterned metal.

15 . The method of claim 1 , wherein the filling material comprises less than or about 50 wt % of the porogen.

16 . An article comprising:
a structure comprising a patterned metal on a surface of a substrate, the patterned metal comprising metal features separated by gaps of an average gap dimension of less than about 1000 nm; and a porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupying all gaps, wherein an interface between the metal features and the porous low dielectric constant material comprises less than about 0.1% by volume of voids.

17 . The article of claim 16 , wherein a maximum critical dimension of the voids is less than about 5 nm.

18 . The article of claim 16 , wherein the interface is substantially free of voids.

19 . The article of claim 16 , wherein the average gap dimension is less than about 100 nm.

20 . A method of filling gaps in a patterned metal structure, the gaps having a critical dimension of less than 100 nm, the method comprising:
depositing a filling material onto the structure, wherein the filling material includes (i) a silicon-based resin that has a molecular weight of less than 30,000 Daltons, and (ii) a porogen having a molecular weight of greater than 400 Daltons, with the proviso that if the porogen has a molecular weight greater than 1000 Daltons, its HLB value is greater than 16; subjecting the deposited filling material to a post-apply thermal treatment; and exposing the thermally treated, deposited filling material to both UV radiation and heat, thereby both crosslinking the silicon-based resin and decomposing the porogen, to form a low dielectric constant material (k<2.7) that fills the gaps.

21 . The method of claim 20 , wherein during said exposing, the filling material is heated to a temperature in the range of approximately 200° C. to 500° C.

22 . The method of claim 20 , wherein no voids within the filled gaps are created that have a critical dimension greater than 5 nm.

23 . The method of claim 20 , wherein the structure has a pitch of less than 100 nm.

Assignees

• IBM

Inventors

• Bruce Robert L
• Dubois Geraud J
• Fritz Gregory
• Magbitang Teddie P
• Miyazoe Hiroyuki
• Volksen Willi

Classifications

• H10W20/0633

  using subtractive patterning of the conductive members · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6903

  containing silicon · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6538

  by exposure to UV light · CPC title