Remote plasma and electron beam generation system for a plasma reactor

Patent metadata

Field	Value
Publication number	US-2017092467-A1
Application number	US-201514968121-A
Country	US
Kind code	A1
Filing date	Dec 14, 2015
Priority date	Sep 25, 2015
Publication date	Mar 30, 2017
Grant date	—

Abstract

Embodiments of an apparatus having an improved coil antenna assembly with a remote plasma source and an electron beam generation system that can provide enhanced plasma in a processing chamber. In one embodiment, a plasma processing chamber includes a chamber body, a lid enclosing an interior volume of the chamber body, a substrate support disposed in the interior volume, a dual inductively coupled source including a coil antenna assembly coupled to the chamber body through the lid, and a remote plasma source coupled to the chamber body through the lid.

First claim

What is claimed is:

1 . A plasma processing chamber comprising:
a chamber body; a lid enclosing an interior volume of the chamber body; a substrate support disposed in the interior volume; a dual inductively coupled source including a coil antenna assembly coupled to the chamber body through the lid; and a remote plasma source coupled to the chamber body through the lid.

2 . The chamber of claim 1 , further comprising:
a dual bias power source coupled to the substrate support.

3 . The chamber of claim 2 , wherein the dual bias power source comprises capacitively coupled plasma source.

4 . The chamber of claim 1 , further comprising:
a shape bias source coupled to the substrate support.

5 . The chamber of claim 1 , further comprising:
an electron beam generation system disposed in the interior volume of the chamber body.

6 . The chamber of claim 5 , wherein the electron beam further comprises:
an electron beam generation source; and an electron beam collector positioned opposite to and facing the electron beam generation source in the interior volume.

7 . The chamber of claim 6 , further comprising:
an electron collector voltage source coupled to the electron beam collector.

8 . The chamber of claim 6 , further comprising:
a beam voltage supply coupled to the electron beam generation source.

9 . The chamber of claim 1 , further comprising:
a confinement ring circumscribing a periphery region of the substrate support.

10 . The chamber of claim 9 , further comprising:
a filter plate disposed below the confinement ring having a spaced apart relationship to the confinement ring and circumscribing the periphery region of the substrate support.

11 . The chamber of claim 10 , wherein the filter plate is fabricated by quartz.

12 . The chamber of claim 1 , further comprising:
a liner formed on an interior wall of the chamber body.

13 . The chamber of claim 1 , further comprising:
a baffle plate disposed under the lid coupled to the remote plasma source through a RF feedthrough.

14 . The chamber of claim 13 , wherein the baffle plate has a surface in parallel to an upper surface of the substrate support.

15 . A plasma processing chamber comprising:
a chamber body; a lid enclosing an interior volume of the chamber body; a substrate support disposed in the interior volume; a dual inductively coupled source including a coil antenna assembly coupled to the chamber body through the lid; and an electron beam generation system disposed in the interior volume of the chamber body adjacent to an inner wall in the chamber body.

16 . The chamber of claim 15 further comprising:
a remote plasma source coupled to the chamber body through the lid.

17 . The chamber of claim 15 further comprising:
a dual bias power source coupled to the substrate support.

18 . The chamber of claim 15 further comprising:
a liner lining on the inner wall of the chamber body; and
a confinement ring circumscribing a periphery region of the substrate support.

19 . The chamber of claim 16 further comprising:
a baffle plate disposed under the lid coupled to the remote plasma source through a RF feedthrough.

20 . A method for operating a processing chamber comprising:
generating a plasma from a dual inductively coupled plasma source formed from a coil assembly disposed in a processing chamber in an interior volume defined in the processing chamber; generating an electron beam in the interior volume of the processing chamber while generating the plasma; and directing a remote plasma source to the plasma distributed in the interior volume of the processing chamber while generating the electron beam therein.

Assignees

• Applied Materials Inc

Inventors

• Dhindsa Rajinder

Classifications

• H10P72/0468

  comprising a chamber adapted to a particular process · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P72/0421

  for drying etching · CPC title

• C23C14/22

  characterised by the process of coating · CPC title

• H01J37/32715

  Workpiece holder · CPC title