Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
Semiconductor module
US2017084568A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017084568-A1 |
| Application number | US-201415126609-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 4, 2014 |
| Priority date | Apr 4, 2014 |
| Publication date | Mar 23, 2017 |
| Grant date | — |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
In the semiconductor module according to the present invention, a conducting member which is used to electrically connect a semiconductor element arranged on a substrate or a bus bar with another electronic component is provided with a structure having flexibility capable of, in a junction with the semiconductor element, reducing the thermal stress due to difference in a coefficient of linear expansion between the conducting member and the semiconductor element, and absorbing dimensional error in objects to be connected. Therefore, the semiconductor module achieves both increased current capacity of the semiconductor device and improved reliability of the semiconductor module.
First claim
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1 . A semiconductor module, wherein a conducting member which is used to electrically connect a semiconductor element arranged on a substrate or a bus bar with another electronic component is provided with a structure having flexibility capable of, in a junction with the semiconductor element, reducing thermal stress due to difference in a coefficient of linear expansion between the conducting member and the semiconductor element, and absorbing dimensional error in objects to be connected. 2 . The semiconductor module according to claim 1 , wherein the conducting member is provided with a structure in which metal wires are formed into a strand wire. 3 . The semiconductor module according to claim 1 , wherein the conducting member is provided with a structure in which thin metal wires are woven into a mesh shape. 4 . The semiconductor module according to claim 1 , wherein the conducting member is provided with a structure in which metal sheets are layered. 5 . The semiconductor module according to claim 1 , comprising a cooling surface structural part which is insulated from the semiconductor element and is installed on the substrate or the bus bar; wherein the conducting member is electrically connected to the semiconductor element and the other electronic component via the cooling surface structural part. 6 . The semiconductor module according to claim 1 , wherein any one of ultrasonic bonding, solder bonding, Ag sinter bonding, conductive adhesive bonding, diffusion bonding, and brazing bonding, is used as a method for bonding the conducting member to the semiconductor element. 7 . The semiconductor module according to claim 2 , Comprising a cooling surface structural part which is insulated from the semiconductor element and is installed on the substrate or the bus bar; wherein the conducting member is electrically connected to the semiconductor element and the other electronic component via the cooling surface structural part. 8 . The semiconductor module according to claim 3 , Comprising a cooling surface structural part which is insulated from the semiconductor element and is installed on the substrate or the bus bar; wherein the conducting member is electrically connected to the semiconductor element and the other electronic component via the cooling surface structural part. 9 . The semiconductor module according to claim 4 , Comprising a cooling surface structural part which is insulated from the semiconductor element and is installed on the substrate or the bus bar; wherein the conducting member is electrically connected to the semiconductor element and the other electronic component via the cooling surface structural part. 10 . The semiconductor module according to claim 2 , wherein any one of ultrasonic bonding, solder bonding, Ag sinter bonding, conductive adhesive bonding, diffusion bonding, and brazing bonding, is used as a method for bonding the conducting member to the semiconductor element. 11 . The semiconductor module according to claim 3 , wherein any one of ultrasonic bonding, solder bonding, Ag sinter bonding, conductive adhesive bonding, diffusion bonding, and brazing bonding, is used as a method for bonding the conducting member to the semiconductor element. 12 . The semiconductor module according to claim 4 , wherein any one of ultrasonic bonding, solder bonding, Ag sinter bonding, conductive adhesive bonding, diffusion bonding, and brazing bonding, is used as a method for bonding the conducting member to the semiconductor element. 13 . The semiconductor module according to claim 5 , wherein any one of ultrasonic bonding, solder bonding, Ag sinter bonding, conductive adhesive bonding, diffusion bonding, and brazing bonding, is used as a method for bonding the conducting member to the semiconductor element. 14 . The semiconductor module according to claim 7 , wherein any one of ultrasonic bonding, solder bonding, Ag sinter bonding, conductive adhesive bonding, diffusion bonding, and brazing bonding, is used as a method for bonding the conducting member to the semiconductor element. 15 . The semiconductor module according to claim 8 , wherein any one of ultrasonic bonding, solder bonding, Ag sinter bonding, conductive adhesive bonding, diffusion bonding, and brazing bonding, is used as a method for bonding the conducting member to the semiconductor element. 16 . The semiconductor module according to claim 9 , wherein any one of ultrasonic bonding, solder bonding, Ag sinter bonding, conductive adhesive bonding, diffusion bonding, and brazing bonding, is used as a method for bonding the conducting member to the semiconductor element.
Assignees
Inventors
Classifications
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
between laterally-adjacent chips · CPC title
using a polymer adhesive, e.g. an adhesive based on silicone or epoxy · CPC title
Soldering or alloying · CPC title
Ultrasonic bonding, e.g. thermosonic bonding · CPC title
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Frequently asked questions
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- What does patent US2017084568A1 cover?
- In the semiconductor module according to the present invention, a conducting member which is used to electrically connect a semiconductor element arranged on a substrate or a bus bar with another electronic component is provided with a structure having flexibility capable of, in a junction with the semiconductor element, reducing the thermal stress due to difference in a coefficient of linear e…
- Who is the assignee on this patent?
- Mitsubishi Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification H10W40/22. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Mar 23 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).