SiC POWDER, SiC SINTERED BODY, SiC SLURRY AND MANUFACTURING METHOD OF THE SAME

US2017076835A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2017076835-A1
Application numberUS-201615363147-A
CountryUS
Kind codeA1
Filing dateNov 29, 2016
Priority dateJul 29, 2015
Publication dateMar 16, 2017
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A method of manufacturing a silicon carbide (SiC) sintered body and a SiC sintered body obtained by the method are provided. The method includes: preparing a composite powder by subjecting a SiC raw material and a sintering aid raw material to mechanical alloying; and sintering the composite powder, wherein the sintering aid is at least one selected from the group consisting of an Al—C-based material, an Al—B—C-based material, and a B—C-based material. Accordingly, a SiC sintered body that can be sintered at low temperature, can be densified, and has high strength and high electrical conductivity can be prepared.

First claim

Opening claim text (preview).

What is claimed is: 1 . A silicon carbide (SiC) sintered body, comprising: a sintering aid, wherein the sintering aid includes Al, and the SiC sintered body contains 0.97 to 4.38 wt % Al in grains thereof. 2 . The SiC sintered body of claim 1 , wherein the SiC sintered body further contains 0.1 wt % or more of B in the grains thereof. 3 . The SiC sintered body of claim 1 , wherein the SiC sintered body has a specific resistance of 1 to 10 −4 Ω·cm. 4 . A method of manufacturing a SiC sintered body, comprising: preparing a composite powder by subjecting a SiC raw material and a sintering aid raw material to mechanical alloying; and sintering the composite powder, wherein the sintering aid is at least one selected from the group consisting of an Al—C-based material, an Al—B—C-based material, and a B—C-based material. 5 . A method of manufacturing a SiC sintered body, comprising: preparing a SiC-based composite powder with a sintering aid distributed therein by subjecting Si, at least one selected from the group consisting of Al, B, and B 4 C, and a carbon source to mechanical alloying; and sintering the composite powder, wherein the sintering aid is at least one selected from the group consisting of an Al—C-based material, an Al—B—C-based material, and a B—C-based material. 6 . The method of claim 5 , wherein the sintering the composite powder, comprises sintering the composite powder at a temperature of 1550 to 2100° C. 7 . The method of claim 5 , wherein the content of the sintering aid is 2 to 13 wt %. 8 . A SiC slurry, comprising: a SiC composite powder; and a dispersant, wherein the content of the dispersant is 0.5 to 2 wt % relative to 100 wt % of the SiC composite powder. 9 . The SiC slurry of claim 8 , wherein the dispersant is polyethyleneimine (PEI) or tetramethyl ammonium hydroxide (TMAH). 10 . The SiC slurry of claim 8 , wherein the SiC composite powder comprises a sintering aid, and the sintering aid is at least one selected from the group consisting of an Al—C-based material, an Al—B—C-based material, and a B—C-based material. 11 . The SiC slurry of claim 10 , wherein the content of the sintering aid exceeds 0, but is not higher than 13 wt %, relative to 100 wt % of the SiC composite powder. 12 . A method of manufacturing a SiC slurry, comprising: preparing a composite powder by subjecting a SiC raw material and a sintering aid raw material to mechanical alloying; and mixing a dispersion medium and a dispersant into the composite powder, wherein the sintering aid is at least one selected from the group consisting of an Al—C-based material, an Al—B—C-based material, and a B—C-based material. 13 . A method of manufacturing a SiC slurry, comprising: preparing a SiC-based composite powder with a sintering aid distributed therein by subjecting Si, at least one selected from the group consisting of Al, B, and B 4 C, and a carbon source to mechanical alloying; and mixing a dispersion medium and a dispersant into the composite powder, wherein the sintering aid is at least one selected from the group consisting of an Al—C-based material, an Al—B—C-based material, and a B—C-based material. 14 . The method of claim 13 , wherein the mixing the dispersion medium and the dispersant into the composite powder, comprises mixing the composite powder, the dispersion medium, and the dispersant through agitation and performing ultrasonic dispersion to promote the dispersion of the dispersant. 15 . The method of claim 7 , further comprising, after the mixing the dispersion medium and the dispersant into the composite powder: processing the composite powder with a ball mill or a planetary mill.

Assignees

Inventors

Classifications

  • Burning or sintering processes (C04B33/32 takes precedence {; powder metallurgy B22F}) · CPC title

  • Silicon carbides · CPC title

  • based on silicon carbide · CPC title

  • Beta silicon carbide · CPC title

  • Pressure sintering · CPC title

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What does patent US2017076835A1 cover?
A method of manufacturing a silicon carbide (SiC) sintered body and a SiC sintered body obtained by the method are provided. The method includes: preparing a composite powder by subjecting a SiC raw material and a sintering aid raw material to mechanical alloying; and sintering the composite powder, wherein the sintering aid is at least one selected from the group consisting of an Al—C-based ma…
Who is the assignee on this patent?
Korea Mach & Materials Inst
What technology area does this patent fall under?
Primary CPC classification H01B1/04. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Mar 16 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).