Semiconductor storage device

Patent metadata

Field	Value
Publication number	US-2017071075-A1
Application number	US-201615062359-A
Country	US
Kind code	A1
Filing date	Mar 7, 2016
Priority date	Sep 4, 2015
Publication date	Mar 9, 2017
Grant date	—

Abstract

A semiconductor storage device includes a substrate having a wiring, a first semiconductor memory, a terminal portion, a holder surrounding the terminal portion, a case, and a first plate-shaped member. The first semiconductor memory is disposed on a first principal surface of the substrate and is connected to the wiring. The terminal portion is connected to the substrate at a first end portion of the substrate and has a terminal connected to the wiring. The case houses part of the holder, the substrate, and the first semiconductor memory. Between the first principal surface and a first wall portion of the case facing the first principal surface, the first plate-shaped member is disposed. The first plate-shaped member is connected to the holder and the first principal surface on a second end portion side of the substrate, and has thermal conductivity.

First claim

1 . A semiconductor storage device comprising:
a substrate that comprises a wiring; a first semiconductor memory that is disposed on a first principal surface of the substrate and is connected to the wiring; a terminal portion that is connected to the substrate at a first end portion of the substrate and comprises a terminal connected to the wiring; a holder that surrounds the terminal portion; a case that houses part of the holder, the substrate, and the first semiconductor memory; and a first plate-shaped member that is disposed between the first principal surface and a first wall portion of the case facing the first principal surface so as to be separated from the first semiconductor memory and the case, is connected to the holder at a first end, is connected to the first principal surface on a second end portion side of the substrate at a second end, and comprises thermal conductivity.

2 . The semiconductor storage device according to claim 1 , wherein
the first plate-shaped member comprises electrical conductivity and is connected to a ground wiring of the wiring on the first principal surface on the second end portion side.

3 . The semiconductor storage device according to claim 1 , comprising
a second plate-shaped member that is disposed between a second principal surface of the substrate on an opposite side of the first principal surface and a second wall portion of the case facing the second principal surface so as to be separated from the case, is connected to the holder at a first end, is connected to the second principal surface on the second end portion side at a second end, and comprises thermal conductivity.

4 . The semiconductor storage device according to claim 2 , comprising
a second plate-shaped member that is disposed between a second principal surface of the substrate on an opposite side of the first principal surface and a second wall portion of the case facing the second principal surface so as to be separated from the case, is connected to the holder at a first end, is connected to the second principal surface on the second end portion side at a second end, and comprises thermal conductivity.

5 . The semiconductor storage device according to claim 3 , comprising
a second semiconductor memory that is disposed on the second principal surface and is connected to the wiring; wherein the second plate-shaped member is disposed so as to be separated from the second semiconductor memory.

6 . The semiconductor storage device according to claim 4 , comprising
a second semiconductor memory that is disposed on the second principal surface and is connected to the wiring; wherein the second plate-shaped member is disposed so as to be separated from the second semiconductor memory.

7 . The semiconductor storage device according to claim 3 , wherein
the second plate-shaped member comprises electrical conductivity and is connected to a ground wiring of the wiring on the second principal surface on the second end portion side.

8 . The semiconductor storage device according to claim 4 , wherein
the second plate-shaped member comprises electrical conductivity and is connected to a ground wiring of the wiring on the second principal surface on the second end portion side.

9 . The semiconductor storage device according to claim 5 , wherein
the second plate-shaped member comprises electrical conductivity and is connected to a ground wiring of the wiring on the second principal surface on the second end portion side.

10 . The semiconductor storage device according to claim 6 , wherein
the second plate-shaped member comprises electrical conductivity and is connected to a ground wiring of the wiring on the second principal surface on the second end portion side.

11 . The semiconductor storage device according to claim 2 , wherein the first plate-shaped member contains metal.

12 . The semiconductor storage device according to claim 7 , wherein the second plate-shaped member contains metal.

13 . The semiconductor storage device according to claim 1 , comprising a first member that is connected to the first semiconductor memory and the first plate-shaped member between the first semiconductor memory and the first plate-shaped member and comprises thermal conductivity and an insulating property.

14 . The semiconductor storage device according to claim 5 , comprising a second member that is connected to the second semiconductor memory and the second plate-shaped member between the second semiconductor memory and the second plate-shaped member and comprises thermal conductivity and an insulating property.

15 . The semiconductor storage device according to claim 1 , comprising
a controller that is disposed on the first principal surface so as to be separated from the first plate-shaped member and is connected to the wiring; and a third member that is connected to the controller and the first plate-shaped member between the controller and the first plate-shaped member and comprises thermal conductivity and an insulating property.

16 . The semiconductor storage device according to claim 13 , wherein the first member comprises resin or ceramic.

17 . The semiconductor storage device according to claim 14 , wherein the second member comprises resin or ceramic.

18 . The semiconductor storage device according to claim 15 , wherein the third member comprises resin or ceramic.

Assignees

• Toshiba Kk

Inventors

• Hayakawa Toshiyuki
• Harashima Shiro

Classifications

• H10W40/22

  characterised by their shape, e.g. having conical or cylindrical projections · CPC title

• H05K5/0278 Primary

  of USB type (details relating to connectors H01R27/00) · CPC title

• H05K7/20445

  the coupling element being an additional piece, e.g. thermal standoff · CPC title

• H05K7/2039 Primary

  characterised by the heat transfer by conduction from the heat generating element to a dissipating body (arrangements for increasing/decreasing heat-transfer, e.g. fins details, F28F13/00) · CPC title

• G06K19/07732 Primary

  the record carrier having a housing or construction similar to well-known portable memory devices, such as SD cards, USB or memory sticks (housings for electrical equipment in general, see H05K5/02) · CPC title