Semiconductor device and optical coupling device

Patent metadata

Field	Value
Publication number	US-2017069610-A1
Application number	US-201615047870-A
Country	US
Kind code	A1
Filing date	Feb 19, 2016
Priority date	Sep 4, 2015
Publication date	Mar 9, 2017
Grant date	—

Abstract

According to one embodiment, a semiconductor device includes a first semiconductor element having a first surface, a second semiconductor element having a lower surface bonded to the first surface of the first semiconductor element, a gel-like silicone that covers an upper surface of the second semiconductor element, and a resin portion that covers the gel-like silicone and the first surface of the first semiconductor element.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a first semiconductor element having a first surface; a second semiconductor element having a lower surface bonded to the first surface of the first semiconductor element; a gel-like silicone covering an upper surface of the second semiconductor element; and a resin portion covering the gel-like silicone and the first semiconductor element.

2 . The semiconductor device according to claim 1 , wherein the gel-like silicone has a hardness value of 10 to 24 as determined according to at least one of JIS K 6253 and JIS K 7215.

3 . The semiconductor device according to claim 2 , wherein the resin portion has a hardness value greater than or equal to 30 as determined according to at least one of JIS K 6253 and JIS K 7215.

4 . The semiconductor device according to claim 1 , wherein the resin portion is an epoxy resin.

5 . The semiconductor device according to claim 1 , wherein the first semiconductor element is a light receiving chip and the second semiconductor element is a light emitting chip, and the first semiconductor element is bonded to the second semiconductor with a transparent silicone material.

6 . The semiconductor device according to claim 1 , wherein a bonding wire extends through the resin portion and the gel-like silicone to contact the upper surface of the second semiconductor element.

7 . The semiconductor device according to claim 1 , wherein the second semiconductor element includes a light emitting element and the resin portion is opaque at a wavelength of light emitted by the light emitting element.

8 . The semiconductor device according to claim 1 , wherein the second semiconductor element includes a light emitting element and the gel-like silicone is opaque at a wavelength of light emitted by the light emitting element.

9 . The semiconductor device according to claim 1 , wherein a thickness of the gel-like silicone on the upper surface of the second semiconductor element is greater than a thickness of the gel-like silicone on a side surface of the second semiconductor element, the thicknesses being respectively measured along a direction normal to the upper surface and the side surface.

10 . The semiconductor device according to claim 1 , wherein the gel-like silicone has a hardness value of 16 to 24 as determined according to at least one of JIS K 6253 and JIS K 7215.

11 . A semiconductor device, comprising:
a first semiconductor element on a surface of a substrate; a second semiconductor element having a lower surface bonded to an upper surface of the first semiconductor element; a rubber-like silicone covering an upper surface and a side surface of the second semiconductor element; and a resin portion covering an outer surface of the rubber-like silicone and the first semiconductor element, wherein a thickness of the rubber-like silicone on the upper surface of the second semiconductor element is smaller than a thickness of the rubber-like silicone on the side surface of the second semiconductor element, the thicknesses being respectively measured along a direction normal to the upper surface of the second semiconductor element and the side surface of the second semiconductor element.

12 . The semiconductor device according to claim 11 , further comprising:
a first gap between the rubber-like silicone and the resin portion on the upper surface of the second semiconductor element; and a second gap between the rubber-like silicone and the resin portion on the side surface of the second semiconductor element, wherein a maximum spacing between the rubber-like silicone and the resin portion in the first gap is larger than a maximum width spacing between the rubber-like silicone and the resin portion in the second gap.

13 . The semiconductor device according to claim 11 , wherein the rubber-like silicone has a hardness value of 25 or greater as determined according to at least one of JIS K 6253 and JIS K 7215, and the resin portion has a hardness value greater than or equal to 30 as determined according to at least one of JIS K 6253 and JIS K 7215.

14 . The semiconductor device according to claim 11 , wherein the outer surface of the rubber-like silicone is modified by plasma cleaning prior to application of the resin portion thereon.

15 . The semiconductor device according to claim 11 , wherein
the first semiconductor element includes a light receiving portion, the second semiconductor element includes a light emitting portion, and the light emitting portion faces the light receiving portion.

16 . An optical coupling device, comprising:
a light receiving chip and a light emitting chip bonded to each other in a facing arrangement; a gel-like silicone covering an upper surface and a side surface of the light emitting chip; and a resin portion covering an outer surface of the gel-like silicone and encapsulating the light receiving chip and the light emitting chip.

17 . The optical coupling device according to claim 16 , wherein the gel-like silicone has a hardness value of 10 to 24 as determined according to at least one of JIS K 6253 and JIS K 7215.

18 . The optical coupling device according to claim 16 , wherein the gel-like silicone has a hardness value of 16 to 24 as determined according to at least one of JIS K 6253 and JIS K 7215

19 . The optical coupling device according to claim 16 , wherein the resin portion has a hardness value, as determined according to at least one of JIS K 6253 and JIS K 7215, that is at least three times a hardness value of the gel-like silicone, as determined according to at least one of JIS K 6253 and JIS K 7215.

20 . The optical coupling device according to claim 17 , wherein a thickness of the gel-like silicone on the upper surface of the light emitting element is greater than a thickness of the gel-like silicone on the side surface of the light emitting element, the thicknesses being respectively measured along a direction normal to the upper surface and the side surface.

Assignees

• Toshiba Kk

Inventors

• Takai Naoya

Classifications

• H10W72/07355

  changes in materials · CPC title

• H10W72/351

  Materials of die-attach connectors · CPC title

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title

• H10W70/635

  Through-vias · CPC title

• H10W40/25

  characterised by their materials · CPC title