Manufacturing method for polycrystalline electrode

Patent metadata

Field	Value
Publication number	US-2017062800-A1
Application number	US-201614989230-A
Country	US
Kind code	A1
Filing date	Jan 6, 2016
Priority date	Aug 28, 2015
Publication date	Mar 2, 2017
Grant date	—

Abstract

A method for manufacturing polycrystalline electrode is provided, which may include the following steps: providing a conductive substrate; using a film coating method to deposit an active material on one side of the conductive substrate by a hydrogen-containing plasma source to form an electrode layer; executing a thermal annealing process for the electrode layer in an oxygen-containing environment. The grains of the polycrystalline electrode manufactured by the method will be more uniform in size, which can significantly increase the volumetric energy density of thin-film battery to significantly improve its performance.

First claim

What is claimed is:

1 . A manufacturing method for a polycrystalline electrode, comprising:
providing a conductive substrate; using a film coating method to deposit an active material on one side of the conductive substrate by a hydrogen-containing plasma source to form a first electrode layer; and executing a thermal annealing process to process the first electrode layer in an oxygen-containing environment to make grains of the first electrode layer uniform.

2 . The manufacturing method for the polycrystalline electrode of claim 1 , further comprising:
forming an electrolyte layer on the first electrode layer.

3 . The manufacturing method for the polycrystalline electrode of claim 2 , further comprising:
using the film coating method to deposit the active material on the electrolyte layer by the hydrogen-containing plasma source to form a second electrode layer; and executing the thermal annealing process to process the second electrode layer in the oxygen-containing environment to make grains of the second electrode layer uniform.

4 . The manufacturing method for the polycrystalline electrode of claim 3 , further comprising:
forming a current collecting layer on the second electrode layer.

5 . The manufacturing method for the polycrystalline electrode of claim 4 , further comprising:
forming a first conductive film between the conductive substrate and the first electrode layer.

6 . The manufacturing method for the polycrystalline electrode of claim 5 , further comprising:
forming a second conductive film between the second electrode layer and the current collecting layer.

7 . The manufacturing method for the polycrystalline electrode of claim 6 , wherein the conductive film is a graphite film.

8 . The manufacturing method for the polycrystalline electrode of claim 1 , wherein the conductive substrate is a metal substrate.

9 . The manufacturing method for the polycrystalline electrode of claim 8 , wherein the metal substrate is a stainless steel substrate, an aluminum substrate, a nickel substrate, or a copper substrate.

10 . The manufacturing method for the polycrystalline electrode of claim 1 , wherein the hydrogen-containing plasma source is a mixed gas of an inert gas and a gas comprising hydrogen atoms.

11 . The manufacturing method for the polycrystalline electrode of claim 10 , wherein the gas comprising hydrogen atoms is a hydrogen gas, an ammonia gas, or a methane gas.

12 . The manufacturing method for the polycrystalline electrode of claim 10 , wherein the inert gas is a helium gas, a neon gas, an argon gas, a krypton gas, a xenon gas, and a radon gas.

13 . The manufacturing method for the polycrystalline electrode of claim 10 , wherein a volume ratio of the gas comprising hydrogen atoms to the inert gas is in a range of 0.001˜0.1.

14 . The manufacturing method for the polycrystalline electrode of claim 1 , wherein the active material is LiCoO 2 , LiNiO 2 , LiMn 2 O 4 , LiAl 0.1 Mn 1.9 O 4 , LiFePO 4 , or Li 4 Ti 5 O 12 .

15 . The manufacturing method for the polycrystalline electrode of claim 1 , wherein a size of each of the grains of the first electrode layer is in a range of 50 nm˜500 nm.

16 . The manufacturing method for the polycrystalline electrode of claim 1 , wherein a thickness of the first electrode layer is in a range of 50 nm˜5000 nm.

17 . The manufacturing method for the polycrystalline electrode of claim 1 , wherein the film coating method is a vacuum thermal evaporation, a radio frequency sputtering, or a radio frequency magnetron sputtering.

Assignees

• Inst Nuclear Energy Res Atomic Energy Council Executive Yuan Roc

Inventors

• Hsueh Tien-Hsiang
• Su Chi-Hung
• Jan Der-Jun
• Yu Yuh-Jenq
• Jheng Yuan-Ruei

Classifications

• H01M4/0423

  Physical vapour deposition · CPC title

• H01M6/40

  Printed batteries {, e.g. thin film batteries} · CPC title

• H01M4/0471 Primary

  involving thermal treatment, e.g. firing, sintering, backing particulate active material, thermal decomposition, pyrolysis · CPC title

• H01M4/0404

  by coating on electrode collectors · CPC title

• H01M4/0407

  by coating on an electrolyte layer · CPC title