Power module substrate, power module substrate with heat sink, power module, method of manufacturing power module substrate, and copper member-bonding paste

Patent metadata

Field	Value
Publication number	US-2017034905-A1
Application number	US-201615289453-A
Country	US
Kind code	A1
Filing date	Oct 10, 2016
Priority date	Feb 1, 2012
Publication date	Feb 2, 2017
Grant date	—

Abstract

This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an Ag—Cu eutectic structure layer 32 having a thickness of 15 μm or less that is formed between the nitride layer and the copper plate.

First claim

1 . A power module substrate, comprising:
a ceramic substrate that is formed of AlN or Si 3 N 4 and has a first surface; a copper plate that is formed of copper or a copper alloy and is laminated and bonded on the first surface of the ceramic substrate; a nitride layer that contains at least one nitride of elements selected from Ti, Hf, Zr, and Nb and is formed on the first surface of the ceramic substrate between the copper plate and the ceramic substrate; and an Ag—Cu eutectic structure layer that has a thickness of 15 μm or less and is formed between the nitride layer and the copper plate; wherein the thickness of the Ag—Cu eutectic structure layer is measured by a method comprising: obtaining a backscattered electron image of an interface between the copper plate and the ceramic substrate using an EPMA; based on the backscattered electron image, measuring the area of the Ag—Cu eutectic structure layer continuously formed on the bonding interface in a measurement visual field at a magnification of 2000 times; dividing the area of the Ag—Cu eutectic structure layer by the width of the measurement visual field, and obtaining the average of the thicknesses in five measurement visual fields as the thickness of the Ag—Cu eutectic structure layer.

2 . The power module substrate according to claim 1 , wherein the ceramic substrate is formed of AlN, and
the thickness of the Ag—Cu eutectic structure layer is 14 μm or less.

3 . The power module substrate according to claim 1 , wherein
the ceramic substrate is formed of Si 3 N 4 and the thickness of the Ag—Cu eutectic structure layer is 1 μm or less.

4 . A power module substrate according to claim 1 , wherein
the power module substrate has no crack after repeating cooling-heating cycles of −45° C. to 125° C. for 3500 times on the power module substrate

5 . A power module substrate with a heat sink, comprising:
the power module substrate according to claim 1 ; and a heat sink that cools the power module substrate

6 . A power module, comprising:
the power module substrate according to claim 1 ; and an electronic component that is mounted on the power module substrate.

7 . (canceled)

8 . (canceled)

9 . (canceled)

10 . (canceled)

11 . (canceled)

12 . (canceled)

13 . (canceled)

14 . (canceled)

15 . (canceled)

Assignees

• Mitsubishi Materials Corp

Inventors

• Terasaki Nobuyuki
• Nagatomo Yoshiyuki
• Nishikawa Kimihito
• Kuromitsu Yoshirou

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• B23K2101/42

  Printed circuits · CPC title

• C04B2237/704

  of one or more of the ceramic layers or articles · CPC title

• H05K13/0465

  by soldering (H05K13/0469 takes precedence) · CPC title