Single layer nanocomposite photoresponse device

Patent metadata

Field	Value
Publication number	US-2017005283-A1
Application number	US-201514789622-A
Country	US
Kind code	A1
Filing date	Jul 1, 2015
Priority date	Jul 1, 2015
Publication date	Jan 5, 2017
Grant date	—

Abstract

A photoresponse device comprising a nanocomposite photoactive material is provided. The photoactive layer comprises a nanocomposite material of metal oxide nanoparticles dispersed within a photosensitizing organic semiconductor formed on a substrate. Methods of characterizing the nanocomposites are provided and demonstrate commercially relevant electrical and photodetection properties, particularly the ability to operate as a photodiode, photoconductor or photocapacitor. An economical process for preparing the nanocomposite and the photoresponse device is also provided as well as applications.

First claim

1 . A photoresponse device, comprising;
a first metal contact layer having a low work function, a substrate layer in continuous contact with the first metal contact layer, a nanocomposite layer in continuous contact with the substrate layer, a second metal contact layer having a high work function in continuous contact with the nanocomposite layer, wherein the second metal contact layer is gold, wherein, the nanocomposite layer comprises metal oxide nanoparticles dispersed in an organic semiconductor.

2 . The photoresponse device of claim 1 , wherein a molar ratio of the metal oxide nanoparticles to the organic semiconductor is 1:500-1:5.

3 . The photoresponse device of claim 1 , wherein the metal oxide nanoparticles are zinc oxide nanorods.

4 . The photoresponse device of claim 1 , wherein the organic semiconductor is coumarin.

5 . The photoresponse device of claim 1 , wherein the low work function first metal contact layer is aluminum.

6 . (canceled)

7 . The photoresponse device of claim 1 , wherein the substrate layer comprises a p-type doped silicon semiconductor.

8 . The photoresponse device of claim 1 , wherein the device is a Schottky photodiode when not illuminated.

9 . The photoresponse device of claim 8 , wherein the Schottky photodiode is controlled using light and voltage simultaneously.

10 . The photoresponse device of claim 1 , wherein the device is a photoconductor in a first mode when illuminated.

11 . The photoresponse device of claim 1 , wherein the device is a photocapacitor in a second mode when illuminated.

12 . The photoresponse device of claim 10 , wherein the photoconductor is controlled using light and voltage simultaneously.

13 . The photoresponse device of claim 11 , wherein the photocapacitor is controlled using light and voltage simultaneously.

14 . The photoresponse device of claim 10 , wherein the photoconductor has a sensitivity, the ratio of illuminate current to dark current of at least 3000 at 4V.

15 . The photoresponse device of claim 10 , wherein the photoconductor has photoresponsivity of at least 0.1 A/W.

16 . The photoresponse device of claim 11 , wherein the photocapacitor has a photocapacitance gain, the ratio of illuminated capacitance to dark capacitance, of at least 60 at 10 Hz.

17 . A method of making the photoresponse device of claim 1 , comprising;
mixing metal oxide nanoparticles, organic semiconductor and a solvent to form a suspension, then drop casting the suspension onto the substrate layer, then evaporating the solvent to form the nanocomposite layer on the substrate layer, then sandwiching the nanocomposite layer and the substrate layer between the first metal contact and the second metal contact, wherein the nanocomposite layer is in direct and continuous contact with the substrate layer and the second metal contact layer.

18 . An electronic device, comprising the photoresponse device of claim 1 , wherein the photoresponse device is present in said electronic device.

19 . The photoresponse device of claim 1 , wherein:
the metal oxide nanoparticles are zinc oxide nanoparticles with a longest dimension of 10-30 nm; the organic semiconductor is coumarin; the substrate layer comprises a p-type doped silicon semiconductor; and a molar ratio of the zinc oxide nanoparticles to the coumarin is 1:500-1:5.

20 . The photoresponse device of claim 19 , wherein the p-type doped silicon semiconductor is silicon doped with boron, aluminum, or gallium, and wherein the molar ratio of the zinc oxide nanoparticles to the coumarin is 1:10-1:5.

Assignees

• Univ King Abdulaziz

Inventors

• Al-Ghamdi Ahmed A
• Al-Turki Yusuf
• Yakuphanoglu Fahrettin
• El-Tantawy Farid

Classifications

• H10K30/352

  the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer · CPC title

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10K30/152

  the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO · CPC title

• H10K85/6574 Primary

  comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes · CPC title

• H01L2251/303

  Electricity · mapped topic