Semiconductor device with air gap and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-2017005166-A1
Application number	US-201614994238-A
Country	US
Kind code	A1
Filing date	Jan 13, 2016
Priority date	Jun 30, 2015
Publication date	Jan 5, 2017
Grant date	—

Abstract

A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a substrate having first and second surfaces; an interlayer dielectric layer formed over the first surface and having a first opening to expose the first surface; a first plug positioned in the first opening; a bit line extending in a first direction and covering the first plug; a second plug comprising a lower part and an upper part, wherein the lower part is at the same level as the first plug, wherein the upper part is at the same level as the bit line; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, wherein the second air gap has a larger width than the first air gap.

2 . The semiconductor device of claim 1 ,
wherein the second air gap has a line shape extending in the first direction.

3 . The semiconductor device of claim 1 , further comprising:
a plug isolation layer extending in a direction intersecting the bit line and providing a second opening which is adjacent to the bit line and the first plug and exposes the second surface, wherein the second plug is positioned in the second opening.

4 . The semiconductor device of claim 1 , further comprising:
a first spacer formed at both sidewalls of the bit line; and a second spacer surrounding a sidewall of the second plug, wherein the second air gap is positioned between the first spacer and the second spacer, and wherein the second air gap has a line shape extending in parallel to a sidewall of the first spacer.

5 . The semiconductor device of claim 4 , further comprising:
a capping layer formed over the second air gap.

6 . The semiconductor device of claim 5 , wherein each of the first spacer, the second spacer, and the capping layer comprises silicon nitride.

7 . The semiconductor device of claim 1 , further comprising:
a third plug over the second plug; and a barrier between the second and third plugs.

8 . The semiconductor device of claim 7 , further comprising:
a pad formed over the third plug, wherein the pad partially overlaps the third plug.

9 . The semiconductor device of claim 8 , further comprising:
a memory element formed over the pad.

10 . The semiconductor device of claim 1 , further comprising:
a buried wordline formed in the substrate and extends in a direction intersecting the bit line.

Assignees

• Sk Hynix Inc

Inventors

• Park Hae-Jung
• Cheong Jung-Taik
• Jung Tae-Woo
• Choi Yun-Je

Classifications

• H10W20/077

  on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title

• H10W20/069

  by forming self-aligned vias or self-aligned contact plugs · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/48

  Insulating materials thereof · CPC title

• H10W20/43

  Layouts of interconnections · CPC title