Method for healing defect of conductive layer, method for forming metal-carbon compound layer, 2d nano materials, transparent electrode and method for manufacturing the same

US2017004899A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2017004899-A1
Application numberUS-201615196820-A
CountryUS
Kind codeA1
Filing dateJun 29, 2016
Priority dateJun 30, 2015
Publication dateJan 5, 2017
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Provided are method for healing defect of conductive layer, method for forming metal-carbon compound layer, 2D nano materials, and transparent electrode and method for manufacturing the same. According to an embodiment of present invention, the method for healing defect of conductive layer comprises: forming a conductive layer on a first metal substrate; contacting the first metal substrate with a salt solution containing a second metal in an ionic form, and forming a second metal particle at least in a portion of a conductive area, the second metal having greater reduction potential than a first metal.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method of healing a defect of a conductive layer comprising: forming a conductive layer on a first metal substrate; forming a second metal particle at least in a portion of the conductive layer by contacting a salt solution with the first metal substrate, the salt solution containing a second metal in an ionic form, the second metal having a larger reduction potential than a first metal of the first metal substrate. 2 . The method of claim 1 , wherein the forming a conductive layer on a first metal substrate, an electron generated by an oxidation of the first metal moves to a surface of the conductive layer through the conductive layer, and the second metal ion contained in the salt solution gains the electron and is reduced. 3 . The method of claim 1 , wherein the forming a second metal particle at least in a portion of the conductive layer comprises, forming the second metal particle selectively in the conductive layer. 4 . The method of claim 1 , wherein the forming a second metal particle at least in a portion of a conductive layer comprises, immersing a first metal substrate having the conductive layer in the salt solution. 5 . The method of claim 4 , wherein the immersing a first metal substrate having the conductive layer in the salt solution comprises, immersing the first metal substrate having the conductive layer in the salt solution for about one minute to twenty minutes. 6 . The method of claim 4 , wherein the concentration of the salt solution is less than 1 mM 7 . The method of claim from 1 , wherein the conductive layer is a carbon layer. 8 . The method of claim 7 , wherein the carbon layer comprises a graphene. 9 . A method of manufacturing a metal-carbon compound layer comprising: forming a carbon layer on a first metal substrate; forming a second metal particle at least in a portion of the carbon layer, the second metal of the second metal particle having a larger reduction potential than a first metal of the first metal substrate. 10 . The method of claim 9 , wherein the forming a second metal particle at least in a portion of the carbon layer comprises, contacting a salt solution with the first metal substrate, the salt solution containing the second metal in an ionic form. 11 . The method of claim 10 , wherein the contacting a salt solution with the first metal substrate comprises, immersing the first metal substrate having the carbon layer in the salt solution. 12 . 2D nano material comprising: a first metal substrate; a carbon layer on the first metal substrate; a second metal particle at least in a portion of the carbon layer, a second metal of the second metal particle having a larger reduction potential than a first metal of the first metal substrate. 13 . The 2D nano material of claim 12 , wherein the second metal particle is formed in a defect of the carbon layer. 14 . The 2D nano material of claim 13 , wherein the carbon layer comprises a graphene and the defect comprises graphene's grain boundary.

Assignees

Inventors

Classifications

  • H01B1/04Primary

    mainly consisting of carbon-silicon compounds, carbon or silicon · CPC title

  • Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal · CPC title

  • Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title

  • Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

  • Self-sustaining carbon mass or layer with impregnant or other layer · CPC title

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What does patent US2017004899A1 cover?
Provided are method for healing defect of conductive layer, method for forming metal-carbon compound layer, 2D nano materials, and transparent electrode and method for manufacturing the same. According to an embodiment of present invention, the method for healing defect of conductive layer comprises: forming a conductive layer on a first metal substrate; contacting the first metal substrate wit…
Who is the assignee on this patent?
Industry-Academic Cooperation Foundation Yonsei Univ, Univ Incheon Ind Acad Coop Found
What technology area does this patent fall under?
Primary CPC classification H01B1/04. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Jan 05 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).