What is claimed is:
1 . A method of healing a defect of a conductive layer comprising:
forming a conductive layer on a first metal substrate; forming a second metal particle at least in a portion of the conductive layer by contacting a salt solution with the first metal substrate, the salt solution containing a second metal in an ionic form, the second metal having a larger reduction potential than a first metal of the first metal substrate.
2 . The method of claim 1 , wherein the forming a conductive layer on a first metal substrate, an electron generated by an oxidation of the first metal moves to a surface of the conductive layer through the conductive layer, and the second metal ion contained in the salt solution gains the electron and is reduced.
3 . The method of claim 1 , wherein the forming a second metal particle at least in a portion of the conductive layer comprises, forming the second metal particle selectively in the conductive layer.
4 . The method of claim 1 , wherein the forming a second metal particle at least in a portion of a conductive layer comprises, immersing a first metal substrate having the conductive layer in the salt solution.
5 . The method of claim 4 , wherein the immersing a first metal substrate having the conductive layer in the salt solution comprises, immersing the first metal substrate having the conductive layer in the salt solution for about one minute to twenty minutes.
6 . The method of claim 4 , wherein the concentration of the salt solution is less than 1 mM
7 . The method of claim from 1 , wherein the conductive layer is a carbon layer.
8 . The method of claim 7 , wherein the carbon layer comprises a graphene.
9 . A method of manufacturing a metal-carbon compound layer comprising:
forming a carbon layer on a first metal substrate; forming a second metal particle at least in a portion of the carbon layer, the second metal of the second metal particle having a larger reduction potential than a first metal of the first metal substrate.
10 . The method of claim 9 , wherein the forming a second metal particle at least in a portion of the carbon layer comprises, contacting a salt solution with the first metal substrate, the salt solution containing the second metal in an ionic form.
11 . The method of claim 10 , wherein the contacting a salt solution with the first metal substrate comprises, immersing the first metal substrate having the carbon layer in the salt solution.
12 . 2D nano material comprising:
a first metal substrate; a carbon layer on the first metal substrate; a second metal particle at least in a portion of the carbon layer, a second metal of the second metal particle having a larger reduction potential than a first metal of the first metal substrate.
13 . The 2D nano material of claim 12 , wherein the second metal particle is formed in a defect of the carbon layer.
14 . The 2D nano material of claim 13 , wherein the carbon layer comprises a graphene and the defect comprises graphene's grain boundary.