Manufacturing method of magnetoresistive effect element and manufacturing apparatus of magnetoresistive effect element

Patent metadata

Field	Value
Publication number	US-2016380189-A1
Application number	US-201615263933-A
Country	US
Kind code	A1
Filing date	Sep 13, 2016
Priority date	Sep 25, 2012
Publication date	Dec 29, 2016
Grant date	—

Abstract

According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more.

First claim

1 . (canceled)

2 . A manufacturing apparatus of a magnetoresistive effect element, comprising:
a first ion source including a first face and generating a first ion beam, the first face including a first opening portion, and the first ion beam outputted via the first opening portion; a second ion source including a second face and generating a second ion beam, the second face including a second opening portion, and the second ion beam outputted via the second opening portion; and a holder including a third face and holding a substrate, the third face including a holding portion where the substrate is disposed, and the substrate irradiated with the first ion beam and the second ion beam, wherein a first plane is defined by the first face, a second plane is defined by the second face and a third plane is defined by the third face, the first plane is parallel to the second plane and does not overlapped with the second plane, and the third plane intersects the first plane and the second plane.

3 . The apparatus according to claim 2 , wherein
a first line connects a center of a first opening face of the first opening portion and a center of a second opening face of the second opening portion, the first line is substantially parallel to the third plane.

4 . The apparatus according to claim 2 , wherein
the first ion beam is outputted to the substrate via the first opening portion in such a way that a solid angle of the first ion beam, defined as a range of dispersion of the first ion beam incident angle with the substrate, in a center of the third face is 10° or more, the first ion beam includes 10% or more of first ions having an energy of 100 eV or less.

5 . The apparatus according to claim 4 , wherein
the first ion beam further includes second ions, the second ions have an energy in a range from 100 eV to 200 eV, and an energy distribution of the first ion beam has an energy peak of the first ion beam in the range from 100 eV to 200 eV.

6 . The apparatus according to claim 2 , wherein
the first ion beam has a continuous distribution in a first range of an angle between a first direction intersecting the third plane and a second direction intersecting the first direction.

7 . The apparatus according to claim 2 , comprising:
a mask having a pattern, wherein the first and second ion sources are configured to etch a magnetic layer included in a laminated structure on the substrate by at least one of the first and second ion beams based on said mask so that a magnetoresistive effect element having the pattern is formed on the substrate.

8 . The apparatus according to claim 2 , wherein
each of the first and second ion sources is an end hole type ion source, and the each of the first and second ion sources includes a container, an anode inside the container and a cathode outside the container.

9 . The apparatus according to claim 2 , wherein
the first ion source includes a cylindrical container having plasma generated therein and having the first opening portion, and a magnetic field source installed on a center axis of the container to generate a first magnetic field, the first ion beam is generated from the plasma generated in the first magnetic field, the first magnetic field includes a first magnetic field component in a first direction along an emission direction of the first ion beam and a second magnetic field component in a second direction perpendicular to the emission direction of the ion beam, the first magnetic field component on the center axis of the container has a stronger magnetic field strength in a center of the container than the magnetic field strength in a first opening face of the first opening portion, and the second magnetic field component in the first opening face of the container has a weaker magnetic field strength in a center of the first opening face than the magnetic field strength at an edge of the first opening face.

10 . The apparatus according to claim 2 , further comprising
a first structure provided between the first and second faces and the third face and through which the ion beam passes.

11 . The apparatus according to claim 10 , wherein
the first structure has a coiled shape extending along a direction from the first and second faces to the third face.

12 . The apparatus according to claim 10 , wherein
the first structure includes a cylindrical partition wall extending along a direction from the first and second faces to the third face.

13 . The apparatus according to claim 10 , wherein
the first structure includes a plurality of rings disposed along a direction from the first and second faces to the third face.

14 . The apparatus according to claim 10 , wherein
the first structure includes a magnetic field generator that generates a clockwise third magnetic field when the holder is viewed from the first and second ion sources.

15 . The apparatus according to claim 2 , further comprising:
a third ion sources having a fourth face and generating a third ion beam, the fourth face including a third opening portion, and the third ion beam outputted via the third opening portion, wherein the first, second and third ion sources are arranged so that straight lines connecting a center of a first opening face of the first opening portion of the first ion source, a center of a second opening face of the second opening portion of the second ion source and a center of a third opening face of the third opening portion of the third ion sources form polygon.

16 . The apparatus according to claim 2 , further comprising:
a fourth ion source including a fifth face and generating a fourth ion beam, the fifth face including a fourth opening portion, and the fourth ion beam outputted via the fourth opening portion, the first ion source outputs the first ion beam to the holder in a first direction, the fourth ion source outputs the fourth ion beam to the holder in a second direction different from the first direction.

17 . The apparatus according to claim 16 , wherein
the first ion source is disposed on a first side of the holder, the third ion source is disposed on a second side of the holder, and the first side is opposed to the second side in a direction parallel to the third plane.

18 . The apparatus according to claim 16 , further comprising:
a fifth ion source including a sixth face and generating a fifth ion beam, the sixth face including a fifth opening portion, and the fifth ion beam outputted via the fifth opening portion, and wherein the second ion beam is outputted to the holder in the first direction and the fifth ion beam is outputted to the holder in the second direction, and the fourth ion source is disposed between the first ion source and the second ion source in a third direction parallel to the third plane, and the second ion source is disposed between the fourth ion source and the fifth ion source in the third direction.

19 . The apparatus according to claim 7 , wherein
the magnetoresistive effect element having the pattern has an element size of 30 nm or less in a direction parallel to a surface of the substrate.

Assignees

• Toshiba Kk

Inventors

• Ohsawa Yuichi
• Ito Junichi
• Kashiwada Saori
• Kamata Chikayoshi
• Tamaoki Naoki

Classifications

• H01J37/08 Primary

  Ion sources; Ion guns · CPC title

• H01L43/12 Primary

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• H01J37/3053

  for evaporating or etching · CPC title