What technology area does this patent fall under?

Primary CPC classification H10N50/10. Mapped technology areas include Electricity.

When was this patent published?

Publication date Thu Dec 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.

What related patents are in patentsdb?

We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).

Magnetoresistance effect element

US2016380187A1 · US · A1

Patent metadata
Field	Value
Publication number	US-2016380187-A1
Application number	US-201615258096-A
Country	US
Kind code	A1
Filing date	Sep 7, 2016
Priority date	May 22, 2015
Publication date	Dec 29, 2016
Grant date	—

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Title
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Abstract
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Assignees and inventors
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First independent claim
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CPC / IPC classifications
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Abstract

Official abstract text for this publication.

A magnetoresistance effect element of the present invention includes: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on the other surface of the barrier layer; and a pinned layer placed on the opposite side of the reference layer from the barrier layer. The pinned layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.

First claim

Opening claim text (preview).

1 . A magnetoresistance effect element comprising: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on another surface of the barrier layer; and a pin layer placed on an opposite side of the reference layer from the barrier layer, wherein the pin layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.

Assignees

Canon Anelva Corp

Inventors

Classifications

G11C11/16
using elements in which the storage effect is based on magnetic spin effect · CPC title
H10B61/00
Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title
H10N50/10Primary
Magnetoresistive devices · CPC title
H01L43/08
Electricity · mapped topic
H01L43/10Primary
Electricity · mapped topic

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What does patent US2016380187A1 cover?: A magnetoresistance effect element of the present invention includes: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on the other surface of the barrier layer; and a pinned layer placed on the opposite side of the reference layer from the barrier layer. The pinned layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, …
Who is the assignee on this patent?: Canon Anelva Corp
What technology area does this patent fall under?: Primary CPC classification H10N50/10. Mapped technology areas include Electricity.
When was this patent published?: Publication date Thu Dec 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?: We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).