Defect inspecting method, sorting method, and producing method for photomask blank

Patent metadata

Field	Value
Publication number	US-2016377553-A1
Application number	US-201615181691-A
Country	US
Kind code	A1
Filing date	Jun 14, 2016
Priority date	Jun 26, 2015
Publication date	Dec 29, 2016
Grant date	—

Abstract

A method of inspecting a defect present at a surface portion of a photomask blank having at least one thin film formed on a substrate by use of the inspecting optical system. The method includes setting the distance between the defect and an objective lens of an inspecting optical system to a defocus distance, applying inspection light to the defect through the objective lens, collecting reflected light from the region irradiated with the inspection light, through the objective lens, as a magnified image, identifying a light intensity variation portion of the magnified image, and determining the rugged shape of the defect on the basis of a variation in light intensity of the light intensity variation portion of the magnified image.

First claim

1 . A method of inspecting a defect present at a surface portion of a photomask blank comprising at least one thin film formed on a substrate, by use of an inspecting optical system, the method comprising:
(A1) a step of bringing the defect and an objective lens of the inspecting optical system close to each other, setting a distance between the defect and the objective lens to a focus distance, and, with the focus distance thus set, applying inspection light to the defect through the objective lens; (A2) a step of collecting reflected light from a region irradiated with the inspection light, through the objective lens, as a first magnified image of the region; (A3) a first determination step of identifying a light intensity variation portion of the first magnified image and determining a rugged shape of the defect on the basis of a variation in light intensity of the light intensity variation portion of the first magnified image; (B1) a step of setting the distance between the defect and the objective lens of the inspecting optical system to a defocus distance deviated from the focus distance, and, with the defocus distance thus set, applying the inspection light to the defect through the objective lens; (B2) a step of collecting reflected light from a region irradiated with the inspection light, through the objective lens, as a second magnified image of the region; and (B3) a second determination step of identifying a light intensity variation portion of the second magnified image and re-determining the rugged shape of the defect on the basis of a variation in light intensity of the light intensity variation portion of the second magnified image.

2 . The method of inspecting a defect according to claim 1 , wherein in the step (B3), the rugged shape of the defect to be inspected is re-determined by comparison between a light intensity variation of a light intensity variation portion of a true pit defect that is preliminarily obtained by simulation and the light intensity variation of the light intensity variation portion of the second magnified image.

3 . The method of inspecting a defect according to claim 1 , wherein the inspection light is light having a wavelength of 210 nm to 550 nm.

4 . The method of inspecting a defect according to claim 1 , wherein in both the step (A1) and the step (B1), application of the inspection light is conducted by oblique illumination in which optical axis of the inspection light is oblique in relation to a surface of the photomask blank.

5 . The method of inspecting a defect according to claim 1 , wherein in both the step (A2) and the step (B2), a spatial filter for shielding part of the reflected light is provided on an optical path of the reflected light, and the reflected light is collected through the spatial filter.

6 . The method of inspecting a defect according to claim 1 , wherein in the step (A1), the photomask blank is placed on a stage that can be moved in an in-plane direction of the photomask blank, and the stage is moved in the in-plane direction to thereby bring the defect and the objective lens of the inspecting optical system close to each other.

7 . The method of inspecting a defect according to claim 1 , wherein when defect shape is determined to be a recessed shape in the first determination step, the steps (B1) to (B3) are carried out to re-determine the rugged shape of the defect.

8 . A method of sorting a photomask blank, comprising sorting out a photomask blank having no pit defect from the photomask blanks subjected to the steps (B1) to (B3), on the basis of the rugged shape of the defect re-determined in the second determination step of the method of inspecting a defect according to claim 7 .

9 . A method of producing a photomask blank, comprising:
a step of forming at least one thin film on a substrate; and a step of determining rugged shape of a defect present in the thin film by the method of inspecting a defect according to claim 1 .

Assignees

• Shinetsu Chemical Co

Inventors

• Terasawa Tsuneo
• Fukuda Hiroshi
• Kishita Takahiro
• Iwai Daisuke
• Yokohata Atsushi

Classifications

• G01N21/9501 Primary

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01B11/24

  for measuring contours or curvatures · CPC title

• G03F1/36 Primary

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title

• G01N2201/0638

  Refractive parts · CPC title

• G03F1/84 Primary

  Inspecting · CPC title