Manufacturable rgb laser diode source

Patent metadata

Field	Value
Publication number	US-2016372893-A1
Application number	US-201615180737-A
Country	US
Kind code	A1
Filing date	Jun 13, 2016
Priority date	Feb 10, 2014
Publication date	Dec 22, 2016
Grant date	—

Abstract

A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

First claim

What is claimed is:

1 . A method for manufacturing an integrated multi-wavelength light emitting device, the method comprising:
providing a first substrate having a first surface region; forming a first epitaxial material overlying the first surface region, the first epitaxial material comprising a release region, an n-type cladding region, a first active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region, the first active region being configured for emission at a first wavelength; providing a second substrate having a second surface region; forming a second epitaxial material overlying the second surface region, the second epitaxial material comprising a release region, an n-type cladding region, a second active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region, the second active region being configured for emission at a second wavelength; patterning the first epitaxial material and the second epitaxial material to form a plurality of first epitaxial dice and a plurality of second epitaxial dice overlying the first substrate and the second substrate, respectively, each of the plurality of first epitaxial dice and the plurality of second epitaxial dice corresponding to at least one light emitting device; transferring at least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice from the first substrate and the second substrate, respectively, to a carrier wafer by selectively etching the release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred; and processing the transferred first epitaxial dice and the second epitaxial dice on the carrier wafer to form a plurality of light emitting devices capable of emitting at least the first wavelength and the second wavelength.

2 . The method of claim 1 , wherein each of the plurality of the epitaxial dice formed on the first substrate and the second substrate is characterized by a first pitch and a second pitch between each pair of adjacent epitaxial dice, the first pitch and the second pitch being less than a design width; and wherein each of the transferred epitaxial dice is characterized by a third pitch and a fourth pitch between each pair of adjacent epitaxial dice, the third and fourth pitch being larger than the first pitch and the second pitch, respectively, and corresponding to the design width.

3 . The method of claim 2 , wherein each of the epitaxial dice is shaped as a mesa, each of the first pitch and the second pitch is between 1 μm and 10 μm, or between 10 micron and 50 microns, or between 50 μm and 100 μm, or between 100 μm and 500 μm with a length of 50 μm to 3000 μm; and the patterning comprises an etching process.

4 . The method of claim 2 , wherein each of the third pitch and the fourth pitch is between 50 microns and 200 microns, or between 200 microns and 500 microns, or between 500 microns and 1000 microns, or greater than 1000 microns.

5 . The method of claim 1 , wherein the carrier wafer is selected from AlN, SiC, sapphire, Si, GaN, GaAs;

6 . The method of claim 1 , wherein the first substrate and the second substrate are gallium and nitrogen containing materials.

7 . The method of claim 1 wherein each of the first wavelength and the second wavelength is in the blue wavelength range to form at least a dual blue wavelength integrated multi-wavelength light emitting device.

8 . The method of claim 7 wherein the light emitting device is configured as a laser diode device or a SLED device.

9 . The method of claim 1 wherein the first wavelength is selected from a blue wavelength and the second wavelength is selected from a green wavelength to form at least a blue and green light emitting integrated multi-wavelength light emitting device.

10 . The method of claim 9 wherein the light emitting device is configured as a laser diode device or a SLED device.

11 . The method of claim 1 , wherein the first substrate is a gallium and nitrogen containing material and the second substrate is a gallium and arsenic containing material.

12 . The method of claim 1 , further comprising:
providing a third substrate having a third surface region; forming a third epitaxial material overlying the third surface region, the third epitaxial material comprising a release region, an n-type cladding region, a third active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region, the third active region being configured for emission at a third wavelength; patterning the third epitaxial material to form a plurality of third epitaxial dice overlying the third substrate, each of the third epitaxial dice corresponding to at least one light emitting device; transferring at least one of the plurality of third epitaxial dice from the third substrate to the carrier wafer by selectively etching the release region, separating from the substrate the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer the epitaxial dice that are being transferred; and processing the transferred first epitaxial dice, the second epitaxial dice, and the third epitaxial dice on the carrier wafer to form a plurality of light emitting devices capable of emitting at least the first wavelength, the second wavelength, and the third wavelength.

13 . The method of claim 12 , wherein the first substrate and second substrate are gallium and nitrogen containing materials and the first wavelength is a blue wavelength and the second wavelength is a green wavelength; and wherein the third substrate is a gallium and arsenic containing material and the third wavelength is selected from a red wavelength such that the integrated multi-wavelength light emitting device is configured to emit a first blue wavelength, a second green wavelength, and a third red wavelength to form an RGB light emitting device.

14 . The method of claim 13 , further comprising processing at least one of the first transferred epitaxial dice, the second transferred epitaxial dice, or the third transferred epitaxial dice to form an RGB laser diode device.

15 . The method of claim 13 , further comprising processing at least one of the first transferred epitaxial dice, the second transferred epitaxial dice, or the third transferred epitaxial dice to form an RGB SLED device.

16 . The method of claim 1 , wherein the carrier wafer is comprised of a gallium and arsenic containing material with a third surface region;
forming a third epitaxial material overlying the third surface region, the third epitaxial material comprising an n-type cladding region, a third active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region, the third active region being configured for emission at a third wavelength; and processing the gallium and arsenic epitaxial material to form light emitting devices emitting the third wavelength such that the integrated multi-wavelength light emitting device emits a first wavelength, a second wavelength, and a third wavelength.

17 . The method of claim 16 wherein the first wavelength is a blue wavelength, the second wavelength is a green wavelength, and the third wavelength is a red wavelength such that the

Assignees

• Soraa Laser Diode Inc

Inventors

• Mclaurin Melvin
• Sztein Alexander
• Hsu Po Shan
• Goutain Eric
• Raring James W
• Rudy Paul
• Novotny Vlad

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/536

  the connected ends being ball-shaped · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/073

  of die-attach connectors · CPC title