Organic light emitting diode, manufacturing method thereof, and organic light emitting diode display including the same

Patent metadata

Field	Value
Publication number	US-2016372714-A1
Application number	US-201615005526-A
Country	US
Kind code	A1
Filing date	Jan 25, 2016
Priority date	Jun 22, 2015
Publication date	Dec 22, 2016
Grant date	—

Abstract

An organic light emitting diode according to an example embodiment of the present disclosure includes an anode and a cathode facing each other, an emission layer between the anode and the cathode, and an auxiliary layer between the anode and the emission layer and/or between the cathode and the emission layer, wherein the auxiliary layer includes a ternary compound including a halogen element.

First claim

What is claimed is:

1 . An organic light emitting diode comprising:
an anode and a cathode facing each other; an emission layer between the anode and the cathode; and an auxiliary layer between at least one selected from a pair of the anode and the emission layer and a pair of the cathode and the emission layer, wherein the auxiliary layer comprises a ternary compound comprising a halogen element.

2 . The organic light emitting diode of claim 1 , wherein the ternary compound has an elemental composition represented by A m B n C z ,
wherein A represents one selected from the group consisting of a Group 1 element, a Group 2 element, a rare earth element, a transition metal, and a post-transition metal, B represents one selected from the group consisting of a Group 1 element, a Group 2 element, a rare earth element, a transition metal, and a post-transition metal, C represents a halogen element, and m, n, and z are each independently an integer from 1 to 5.

3 . The organic light emitting diode of claim 2 , wherein the auxiliary layer comprises a hole-injection layer between the anode and the emission layer.

4 . The organic light emitting diode of claim 2 , wherein the auxiliary layer comprises an electron-injection layer between the cathode and the emission layer.

5 . The organic light emitting diode of claim 2 , wherein the auxiliary layer comprises a hole-injection layer between the anode and the emission layer, and an electron-injection layer between the cathode and the emission layer.

6 . The organic light emitting diode of claim 1 , wherein the ternary compound has a perovskite structure.

7 . The organic light emitting diode of claim 1 , wherein the auxiliary layer comprises a material having a dipole moment of greater than 50 debyes.

8 . The organic light emitting diode of claim 1 , wherein the auxiliary layer comprises at least one selected from RbYbI 3 , CsYbI 3 , KYbI 3 , NaYbI 3 , LiYbI 3 , RbSmI 3 , CsSmI 3 , KSmI 3 , NaSmI 3 , LiSmI 3 , RbMgI 3 , CsMgI 3 , KMgI 3 , NaMgI 3 , and LiMgI 3 .

9 . A method of manufacturing an organic light emitting diode, comprising:
forming an anode on a substrate; forming an emission layer on the anode; forming an electron-injection layer on the emission layer; and forming a cathode on the electron-injection layer, wherein the electron-injection layer comprises a ternary compound comprising a halogen element, and the forming of the electron-injection layer comprises: mixing source materials for the ternary compound in one crucible; producing the ternary compound including a halogen element by heating the crucible; and evaporating and depositing the ternary compound comprising a halogen element by heating the crucible.

10 . The manufacturing method of claim 9 , wherein, in the mixing of the source materials for the ternary compound in one crucible:
the source materials mixed in the crucible comprise a combination of a first source material and a second source material, a combination of a first source material and another first source material, or a combination of a first source material, another first source material, and a second source material; wherein the first source material comprises at least one selected from a Group 1 element, a Group 2 element, a rare earth element, a transition metal, a halogen element, and a compound thereof; and the second source material comprises at least one selected from a Group 1 element, a Group 2 element, a rare earth element, a transition metal, a post-transition metal, and a compound thereof.

11 . The manufacturing method of claim 9 , wherein the electron-injection layer comprises at least one selected from RbYbI 3 , CsYbI 3 , KYbI 3 , NaYbI 3 , LiYbI 3 , RbSmI 3 , CsSmI 3 , KSmI 3 , NaSmI 3 , LiSmI 3 , RbMgI 3 , CsMgI 3 , KMgI 3 , NaMgI 3 , and LiMgI 3 .

12 . The manufacturing method of claim 10 , wherein the evaporation temperature of the ternary compound is lower than the evaporation temperature of the first source material and the second source material.

13 . The manufacturing method of claim 9 , wherein between steps of forming the anode on the substrate, and forming the emission layer on the anode, the method further comprises forming a hole-injection layer on the anode, wherein the hole-injection layer comprises a ternary compound comprising a halogen element, and
the forming of the hole-injection layer comprises: mixing source materials for the ternary compound in one crucible; producing the ternary compound comprising a halogen element by heating the crucible; and evaporating and depositing the ternary compound comprising a halogen element.

14 . An organic light emitting diode display comprising:
a substrate; a thin film transistor on the substrate; and an organic light emitting element connected to the thin film transistor, wherein the organic light emitting element includes: an anode and a cathode facing each other; an emission layer between the anode and the cathode; and an auxiliary layer between the anode and the emission layer, or between the cathode and the emission layer, wherein the auxiliary layer comprises a ternary compound including a halogen element.

15 . The organic light emitting diode display of claim 14 , wherein the ternary compound has an elemental composition represented by A m B n C z ;
wherein A represents one selected from the group consisting of a Group 1 element, a Group 2 element, a rare earth element, a transition metal, and a post-transition metal; B represents one selected from the group consisting of a Group 1 element, a Group 2 element, a rare earth element, a transition metal, and a post-transition metal; C represents a halogen element; and m, n, and z are each independently an integer from 1 to 5.

16 . The organic light emitting diode display of claim 15 , wherein the auxiliary layer comprises a hole-injection layer between the anode and the emission layer.

17 . The organic light emitting diode display of claim 15 , wherein the auxiliary layer comprises an electron-injection layer between the cathode and the emission layer.

18 . The organic light emitting diode display of claim 15 , wherein the auxiliary layer comprises a hole-injection layer between the anode and the emission layer, and an electron-injection layer between the cathode and the emission layer.

19 . The organic light emitting diode display of claim 14 , wherein the auxiliary layer comprises a material having a dipole moment of greater than 50 debyes.

20 . The organic light emitting diode display of claim 14 , wherein the auxiliary layer comprises at least one selected from RbYbI 3 , CsYbI 3 , KYbI 3 , NaYbI 3 , LiYbI 3 , RbSmI 3 , CsSmI 3 , KSmI 3 , NaSmI 3 , LiSmI 3 , RbMgI 3 , CsMgI 3 , KMgI 3 , NaMgI 3 , and LiMgI 3 .

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Dong Chan

Classifications

• H10K85/50

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H10K50/171

  Electron injection layers · CPC title

• H01L27/3262

  Electricity · mapped topic

• H01L51/56 Primary

  Electricity · mapped topic

• H01L51/5092

  Electricity · mapped topic